Patent application number | Description | Published |
20090256637 | HIGH-FREQUENCY POWER AMPLIFIER AND COMMUNICATION DEVICE - It is an object of the present invention to provide a high-frequency power amplifier capable of improving the linearity at the time of high output by preventing decrease in power of bias supply transistor. The high-frequency power amplifier is a high-frequency power amplifier including high-frequency power amplifier transistors and connected in multiple stages and bias supply transistors and each of which supplies bias current to a base of a corresponding one of said high-frequency power amplifier transistors, and each of which is connected to a common power supply terminal which is further connected to a collector of the high-frequency power amplifier transistor at a first stage among said high-frequency power amplifier transistors, and a passive element connected between the common supply terminal and a collector of the corresponding one of said bias supply transistors connected to the high-frequency power amplifier transistor at the first stage. | 10-15-2009 |
20100273535 | RADIO-FREQUENCY POWER AMPLIFIER DEVICE AND WIRELESS COMMUNICATION DEVICE INCLUDING THE SAME - A radio-frequency power amplifier device includes an input terminal for which a first radio-frequency signal for a CDMA mode within a first frequency band and a third radio-frequency signal for a TDMA mode within the first frequency band are selectively provided, a second input terminal for which a second radio-frequency signal for a CDMA mode within a second frequency band and a fourth radio-frequency signal for a TDMA mode within the second frequency band are selectively provided, a first power amplifier unit which to amplifies the provided first radio-frequency signal, a second power amplifier unit which amplifies the provided second radio-frequency signal, a third power amplifier unit which amplifies the provided third radio-frequency signal, and a fourth power amplifier unit which amplifies the provided fourth radio-frequency signal. These power amplifier units are arranged in order of the first power amplifier unit to the fourth power amplifier unit. | 10-28-2010 |
20110050348 | RADIO FREQUENCY POWER AMPLIFIER - An RF power amplifier according to an implementation of the present invention includes: a first power amplifier which linearly amplifies a first RF signal of a first frequency band; a second power amplifier which linearly amplifies a second RF signal of a second frequency band lower than the first frequency band; a third power amplifier which nonlinearly amplifies a third RF signal of the first frequency band; a fourth power amplifier which nonlinearly amplifies a fourth RF signal of the second frequency band, and input lines of the respective power amplifiers do not cross each other on semiconductor substrates, and the output lines of the respective power amplifiers do not cross each other on the semiconductor substrates. | 03-03-2011 |
20130106519 | RADIO FREQUENCY AMPLIFIER CIRCUIT | 05-02-2013 |
20130176079 | RADIO FREQUENCY POWER AMPLIFIER - A radio frequency power amplifier includes: an amplifying element which amplifies an input signal and outputs the signal from an output terminal; and an output load circuit which includes a first resonant circuit and a second resonant circuit that are connected to the output terminal. The first resonant circuit has a resonance frequency higher than the frequency of the second harmonic of the input signal, and the second resonant circuit has a resonance frequency lower than the frequency of the third harmonic of the input signal. The output load circuit has such an impedance looking from the output terminal that a phase of a reflection coefficient at the second harmonic of the input signal is greater than 180 degrees and less than 360 degrees, and a phase of a reflection coefficient at the third harmonic of the input signal is greater than 0 degrees and less than 180 degrees. | 07-11-2013 |
20140077345 | SEMICONDUCTOR PACKAGE, METHOD AND MOLD FOR PRODUCING SAME, INPUT AND OUTPUT TERMINALS OF SEMICONDUCTOR PACKAGE - A semiconductor package according to the present invention includes: a semiconductor element where a high frequency signal is input or output; a planar lead terminal having an end electrically connected to an input terminal or an output terminal of the semiconductor element; an encapsulation resin for encapsulating the lead terminal and the semiconductor element, the lead terminal having another end exposed from the resin; and a ground enhancing metal body encapsulated in the encapsulation resin, having a first main surface facing the lead terminal and a second main surface exposed from the encapsulation resin, wherein the ground enhancing metal body has a shape with a cross section parallel to the second main surface and having a smaller area than an area of the first main surface. | 03-20-2014 |
20140191809 | RADIO FREQUENCY AMPLIFIER CIRCUIT - A radio frequency amplifier circuit includes a transistor and an output-side matching circuit. The output-side matching circuit includes a first distributed constant line to which a radio frequency signal from the transistor is transmitted, a flat plate lead terminal transmitting the radio frequency signal from the first distributed constant line to an outside of the package, and a capacitive element having one electrode that is connected to the lead terminal and the other electrode that is grounded. A back surface of the lead terminal is joined to a resin substrate, and the capacitive element and the first distributed constant line are disposed adjacent to each other, with an alignment direction of the capacitive element and the first distributed constant line intersecting an alignment direction of the first distributed constant line and the lead terminal. | 07-10-2014 |
20140231418 | MICROWAVE HEATING DEVICE - An aspect of the present invention provides a microwave heating device for an object having a plurality of parts, the microwave heating device including: a plurality of antennas which emits microwaves to a heating chamber inside; a sensor which detects information from a block model assigned the information indicating a characteristic of each of the parts; a display and input operation unit configured to receive an input of heating conditions for the object; an electromagnetic field analysis unit configured to derive a heating profile by electromagnetic field analysis based on the information detected by the sensor and the heating conditions inputted to the display and input operation unit, the heating profile including microwave emitting conditions for the object; and a control unit configured to control performance of the microwaves emitted from the antennas based on the derived heating profile. | 08-21-2014 |