| Patent application number | Description | Published |
|---|
| 20080217579 | Light-emitting apparatus, phosphor and method of producing it - A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm | 09-11-2008 |
| 20080260392 | ILLUMINATOR INCLUDING OPTICAL TRANSMISSION MECHANISM - An illuminator including an optical transmission mechanism includes a transmission-side electric circuit for forming electric signals modulated in response to information, a light source for emitting intensity-modulated light in response to the electric modulated signals, optical wavelength conversion means including fluorescent material for converting part of the intensity-modulated light into illumination light, photoelectric conversion means for receiving another part of the modulated light and converting this part into reproduced electric modulated signals and a receiving-side electric circuit for reproducing the information from the reproduced electric modulated signals. | 10-23-2008 |
| 20090011530 | NITRIDE-COMPOSITE SEMICONDUCTOR LASER ELEMENT, ITS MANUFACTURING METHOD, AND SEMICONDUCTOR OPTICAL DEVICE - A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more. | 01-08-2009 |
| 20090236585 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF FABRICATING IT, AND SEMICONDUCTOR OPTICAL APPARATUS - A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region | 09-24-2009 |
| 20100148120 | LIGHT-EMITTING APPARATUS, PHOSPHORESCENT PORTION, AND METHOD OF PRODUCING THE SAME - A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm | 06-17-2010 |
| 20100278205 | NITRIDE-COMPOSITE SEMICONDUCTOR LASER ELEMENT, ITS MANUFACTURING METHOD, AND SEMICONDUCTOR OPTICAL DEVICE - A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more. | 11-04-2010 |
| 20110101881 | LIGHT EMITTING APPARATUS, METHOD FOR DRIVING THE LIGHT EMITTING APPARATUS, AND DISPLAY APPARATUS INCLUDING THE LIGHT EMITTING APPARATUS - A light emitting apparatus comprises a light emitting section for emitting light, a color of the light being changed with a value of a driving current, and a driving section for driving the light emitting section so that the light emitting section emits light having a desired color and a desired intensity, by generating the driving current based on a signal designating the desired color and a signal designating the desired intensity and by applying the driving current to the light emitting section. | 05-05-2011 |
