| Patent application number | Description | Published |
|---|
| 20080211954 | IMAGE PICKUP APPARATUS - A lower electrode, a photoelectric conversion layer, and an upper electrode are stacked in order above a semiconductor substrate, and a charge storage section that stores charge generated in the photoelectric conversion layer is connected to the lower electrode. The charge stored in the charge storage section is swept away by a charge sweeping away section for a given time from the endpoint of exposure. The given time is a time taken until the residual image charge existing in the photoelectric conversion layer at the exposure end point time is sufficiently discharged to the outside of the photoelectric conversion layer in a state in which the same bias as that at the exposure start time point is applied to the photoelectric conversion layer. | 09-04-2008 |
| 20090046185 | IMAGE PICKUP APPARATUS AND SIGNAL PROCESSING METHOD - An image pickup apparatus includes: a solid-state image sensing device that includes a plurality of pixels, each of the pixels including: a photoelectric conversion film; and a photoelectric conversion element that is formed in the semiconductor substrate below the photoelectric conversion film, are made up of at least three types of photoelectric conversion elements for detecting light in different wave ranges, of visible light, and absorbs light in a wave range different from the wave ranges detected in the at least three types of photoelectric conversion elements and generates a charge responsive to the absorbed light, the image pickup apparatus further including: a monochrome image data generation unit; a color image data generation unit; and a record image data generation unit. | 02-19-2009 |
| 20100002110 | IMAGING DEVICE AND METHOD OF DRIVING SOLID STATE IMAGING ELEMENT - An imaging device includes a solid state imaging element that includes a plurality of pixels; and a driving unit; wherein each pixel includes: a photoelectric converting element includes a pair of electrodes stacked above a semiconductor substrate and a photoelectric converting layer arranged between the electrodes; a connecting portion that is arranged in the semiconductor substrate; a potential barrier portion; a first charge accumulating portion; and a signal output circuit, and wherein the driving unit drives the solid state imaging element so that the connecting portion and the potential barrier portion are set to a same potential by injecting charges into the connecting portion. | 01-07-2010 |
| 20100002113 | IMAGING DEVICE AND METHOD OF DRIVING SOLID STATE IMAGING ELEMENT - An imaging device includes a solid state imaging element that includes a plurality of pixels; and a driving unit; wherein each pixel includes: a photoelectric converting element includes a pair of electrodes stacked above a semiconductor substrate and a photoelectric converting layer arranged between the electrodes; a connecting portion that is arranged in the semiconductor substrate; a potential barrier portion; a first charge accumulating portion; and a signal output circuit, and wherein the driving unit executes such a same potential driving that the connecting portion and the potential barrier portion are set to have a same potential by varying the potential of the potential barrier portion. | 01-07-2010 |
| 20100053393 | SOLID-STATE IMAGE SENSOR AND IMAGING DEVICE - A solid-state image sensor includes: a photoelectric conversion section; a floating gate provided above a semiconductor substrate; a first transistor for accumulating charge generated in said photoelectric conversion section into said floating gate; and a second transistor for reading a signal corresponding to the charge accumulated in said floating gate. In an oxide film formed between said floating gate and said semiconductor substrate, at least a part of said oxide film in a region overlapping with the gate electrode of said first transistor is formed thinner than said oxide film in a region overlapping with the gate electrode of said second transistor. | 03-04-2010 |
| 20100053406 | SOLID-STATE IMAGE SENSOR AND IMAGING DEVICE - A solid-state image sensor includes: photoelectric conversion section; a floating gate provided above a semiconductor substrate; a first transistor for accumulating charge generated in said photoelectric conversion section into said floating gate; and a second transistor for reading a signal corresponding to the charge accumulated in said floating gate. A distance between a gate electrode of said first transistor and said floating gate is shorter than a distance between a gate electrode of said second transistor and said floating gate. | 03-04-2010 |
| 20100231769 | SOLID-STATE IMAGING DEVICE, IMAGING APPARATUS, AND DRIVING METHOD OF SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes: a plurality of pixel portions each comprising a photoelectric conversion portion disposed in a semiconductor substrate; and a light shield layer disposed over the semiconductor substrate and having openings which are located over parts of the photoelectric conversion portions, respectively, each of the pixel portions further includes: a transistor comprising a gate electrode, a channel region, and a charge storage portion which is located between the semiconductor substrate and the gate electrode and stores charge generated in the photoelectric conversion portion, the channel region and the charge storage portion are covered with the light shield layer, and the photoelectric conversion portion extends to under the channel region of the transistor. | 09-16-2010 |
| 20100245638 | IMAGING DEVICE - An imaging device includes: a plurality of pixel portions including color filters and photoelectric conversion portions, respectively, each of the photoelectric conversion portions generating charge according to light incident thereon, the color filters being provided on a light incidence side of the respective photoelectric conversion portions, a distance between the photoelectric conversion portions and the color filters being shorter than or equal to 3 μm; and a separation wall which is provided between adjoining ones of the color filters and separates the color filters from each other. | 09-30-2010 |
