Patent application number | Description | Published |
20090212352 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor memory device has a semiconductor substrate, a plurality of word lines formed at predetermined intervals on the semiconductor substrate, each word line having a gate insulating film, a charge storage layer, a first insulating film, and a controlling gate electrode which are stacked in order, and including a metal oxide layer above the level of the gate insulating film, a second insulating film covering a side of the word line and a surface of the semiconductor substrate between the word lines, and having a film thickness of 15 nm or less, and a third insulating film formed between the word lines adjacent to each other such that a region below the level of the metal oxide layer has a cavity. | 08-27-2009 |
20090218607 | NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREOF - A nonvolatile semiconductor memory of an aspect of the invention includes memory cells in the memory cell forming area, and select gate transistors in the select gate forming area. Each memory cell has two first diffusion layers formed in a semiconductor substrate, a first gate insulating film formed on the semiconductor substrate, a charge storage layer formed on the first gate insulating film, a first intermediate insulating film formed on the charge storage layer and a first gate electrode formed on the first intermediate insulating film. Each select gate transistor has two second diffusion layers formed in the semiconductor substrate, a second gate insulating film formed on the semiconductor substrate, a second intermediate insulating film formed in direct contact with the second gate insulating film and having the same structure as the first intermediate insulating film, and a second gate electrode formed on the second intermediate insulating film. | 09-03-2009 |
20110147822 | Semiconductor memory device and method for manufacturing the same - A semiconductor memory device has a semiconductor substrate, a plurality of word lines formed at predetermined intervals on the semiconductor substrate, each word line having a gate insulating film, a charge storage layer, a first insulating film, and a controlling gate electrode which are stacked in order, and including a metal oxide layer above the level of the gate insulating film, a second insulating film covering a side of the word line and a surface of the semiconductor substrate between the word lines, and having a film thickness of 15 nm or less, and a third insulating film formed between the word lines adjacent to each other such that a region below the level of the metal oxide layer has a cavity. | 06-23-2011 |
20110193049 | MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a method for manufacturing a memory device is disclosed. The method includes forming a silicon diode. At least an upper portion of the silicon diode is made of a semiconductor material containing silicon and doped with impurity. The method includes forming a metal layer made of a metal on the silicon diode. The method includes forming a metal nitride layer made of a nitride of the metal on the metal layer. The method includes forming a resistance change film. In addition, the method includes reacting the metal layer with the silicon diode and the metal nitride layer by heat treatment to form an electrode film containing the metal, silicon, and nitrogen. | 08-11-2011 |
20110227025 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SAME - According to one embodiment, a semiconductor memory device includes a word line interconnection layer, a bit line interconnection layer and a pillar. The word line interconnection layer includes a plurality of word lines which extend in a first direction. The bit line interconnection layer includes a plurality of bit lines which extend in a second direction crossing over the first direction. The pillar is arranged between each of the word lines and each of the bit lines. The pillar includes a silicon diode and a variable resistance film, and the silicon diode includes a p-type portion and an n-type portion. The word line interconnection layer and the bit line interconnection layer are alternately stacked, and a compressive force is applied to the silicon diode in a direction in which the p-type portion and the n-type portion become closer to each other. | 09-22-2011 |
20110233506 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nonvolatile memory device includes a first electrode, a second electrode, a resistance change portion and a select element. The resistance change portion is provided between the first electrode and the second electrode and configured to transition between a first resistance state and a second resistance state. The select element is provided between the resistance change portion and the first electrode and has a p-layer including a p-type semiconductor, an i-layer including an intrinsic semiconductor, and an n-layer including an n-type semiconductor. The select element contains an impurity having a smaller bandgap energy than the intrinsic semiconductor, and a concentration peak of the impurity in the i-layer is placed in a center portion of layer thickness of the i-layer. | 09-29-2011 |
20120091414 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a plurality of silicon films. The plurality of silicon films are disposed on one plane and are made of polysilicon containing an impurity. A crystal orientation of each of the silicon films is a (311) orientation. | 04-19-2012 |
20120235107 | NONVOLATILE MEMORY DEVICE - According to one embodiment, a nonvolatile memory device includes a word line interconnect layer, a bit line interconnect layer, a pillar, and charge bearing members. The word line interconnect layer includes a plurality of word lines extending in a first direction. The bit line interconnect layer includes a plurality of bit lines extending in a second direction that intersects the first direction. The pillar is disposed between each of the word lines and each of the bit lines. The charge bearing members contain a negative fixed charge, and provided on side faces of the pillars. The pillars includes a diode film provided with a p-type layer and an n-type layer and a variable resistance film stacked on the diode film. The charge bearing member is disposed on side faces of the p-type layer, and is not disposed on side faces of the n-type layer. | 09-20-2012 |
20130077461 | STORAGE DEVICE - A storage device includes a recording medium, a probe, a substrate, and a processing unit. The recording medium stores a signal. The probe reads or writes the signal to/from the recording medium. The substrate is provided with the probe via a conductive anchor interposed therebetween and a first connection terminal connected to the probe. The processing unit is provided on the substrate and has a second connection terminal. The second connection terminal is connected to the first connection terminal. | 03-28-2013 |