Patent application number | Description | Published |
20150091062 | SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor element includes a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a control electrode, a pad unit, an insulating layer, and a conductor. The second semiconductor layer is provided on the first semiconductor layer. The first electrode is provided on the second semiconductor layer. The second electrode is provided on the second semiconductor layer. The control electrode is provided on the second semiconductor layer. The pad unit is provided on the second semiconductor layer. The pad unit is electrically connected to the control electrode. The insulating layer is provided on the second semiconductor layer. The insulating layer has an opening. The conductor is provided on the insulating layer. The conductor covers at least a part of the opening. | 04-02-2015 |
20150255559 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first semiconductor layer and a first electrode. The first semiconductor layer includes a nitride semiconductor including a first metal. The first electrode is provided in contact with the first semiconductor layer. The first electrode includes a first region, a second region and a third region. The first region includes a compound of the first metal and a second metal or an alloy of the first metal and the second metal. The second metal has reducing properties for the first semiconductor layer. The second region is provided between the first semiconductor layer and the first region and includes the first metal and the second metal. The third region is provided between the first semiconductor layer and the second region and includes a compound of the first metal and nitrogen. | 09-10-2015 |
20150262819 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first semiconductor layer, a first electrode provided on the first semiconductor layer, and a second electrode provided on the first semiconductor layer. The second electrode is apart from the first electrode in a second direction crossing a first direction from the first semiconductor layer toward the first electrode. The first electrode includes a first electrode layer and a second electrode layer. The first electrode layer includes a first metal. The second electrode layer is provided between the first electrode layer and the first semiconductor layer, and includes a second metal. The second metal has a melting point lower than a melting point of the first metal. A distance along the second direction between the first electrode layer and the second electrode is shorter than a distance along the second direction between the second electrode layer and the second electrode. | 09-17-2015 |
20150263152 | SEMICONDUCTOR DEVICE - A semiconductor device includes a GaN-based semiconductor layer, a source electrode on the GaN-based semiconductor layer, a drain electrode on the GaN-based semiconductor layer, and a gate electrode formed on the GaN-based semiconductor layer between the source electrode and the drain electrode. A first layer is in contact with the GaN-based semiconductor layer between the gate electrode and the drain electrode. | 09-17-2015 |
20160079371 | SEMICONDUCTOR DEVICE - According to one embodiment, there is provided a semiconductor device including a first semiconductor layer, a second semiconductor layer, a first insulating film, a first electrode, and a second insulting film. The first semiconductor layer includes a compound semiconductor. The second semiconductor layer is provided on the first semiconductor layer and includes a compound semiconductor. The first insulating film is provided on the second semiconductor layer. The first electrode is provided on the first insulating film. The second insulting film covers at least a portion of the first electrode and has a higher hydrogen concentration than the hydrogen concentration of the first insulating film. | 03-17-2016 |
20160079382 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor layer, a gate insulation film on the semiconductor layer, and a gate electrode on the gate insulation film. The gate electrode includes a first metal compound layer with a first element also contained in the gate insulation film. A first metal layer is on the first metal compound layer, wherein the diffusion coefficient thereof in gold is smaller than the diffusion coefficient thereof in nickel. The first metal layer includes a second element also contained in the first metal compound layer. A gold layer is on the first metal layer. A second metal layer is on the gold layer. Third metal layers are on side surfaces of the gold layer. A source and drain electrode are provided. An interlayer insulation film is on the gate electrode. | 03-17-2016 |