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Morris S.
Morris S. Jones, Vallejo, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090162831 | HUMAN PARVOVIRUS - The present invention relates to the discovery of a new human parvovirus, methods of detecting the parvovirus and diagnosing parvovirus infection, methods of treating or preventing parvovirus infection, and methods for identifying anti-parvoviral compounds. | 06-25-2009 |
Morris S. Young, Santa Monica Terrace, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20110089538 | LOW ETCH PIT DENSITY (EPD) SEMI-INSULATING III-V WAFERS - Systems and methods of manufacturing wafers are disclosed using a low EPD crystal growth process and a wafer annealing process are provided resulting in III-V/GaAs wafers that provide higher device yields from the wafer. In one exemplary implementation, there is provided a method of manufacturing a group III based material with a low etch pit density (EPD). Moreover, the method includes forming polycrystalline group III based compounds, and performing vertical gradient freeze crystal growth using the polycrystalline group III based compounds. Other exemplary implementations may include controlling temperature gradient(s) during formation of the group III based crystal to provide very low etch pit density. | 04-21-2011 |
Morris S. Young, Fremont, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20080280427 | Low etch pit density (EPD) semi-insulating GaAs wafers - A method for manufacturing wafers using a low EPD crystal growth process and a wafer annealing process is provided that results in GaAs/InGaP wafers that provide higher device yields from the wafer. | 11-13-2008 |
| 20100001288 | Low Etch Pit Density (EPD) Semi-Insulating GaAs Wafers - A method for manufacturing wafers using a low EPD crystal growth process and a wafer annealing process is provided that results in GaAs/InGaP wafers that provide higher device yields from the wafer. | 01-07-2010 |