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Moris
Moris Dovek, Milpitas, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090002884 | Magnetic head for perpendicular magnetic recording and method of manufacturing same - An encasing section that accommodates a pole layer includes an encasing layer having an encasing groove, and a nonmagnetic film disposed in the encasing groove at a position between the encasing layer and the pole layer. The pole layer includes a track width defining portion and a wide portion. The distance from a medium facing surface to the boundary between the track width defining portion and the wide portion is within a range of 10 to 300 nm. The track width defining portion has a first side surface and a second side surface, while the wide portion has a third side surface contiguous to the first side surface, and a fourth side surface contiguous to the second side surface. The encasing layer has a first wall surface and a second wall surface that form the encasing groove. The distance between the third side surface and the first wall surface is smaller than the distance between the first side surface and the first wall surface, and the distance between the fourth side surface and the second wall surface is smaller than the distance between the second side surface and the second wall surface. | 01-01-2009 |
Moris Kori, Palo Alto, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20080227291 | FORMATION OF COMPOSITE TUNGSTEN FILMS - Embodiments of the invention provide methods for depositing tungsten materials. In one embodiment, a method for forming a composite tungsten film is provided which includes positioning a substrate within a process chamber, forming a tungsten nucleation layer on the substrate by subsequently exposing the substrate to a tungsten precursor and a reducing gas containing hydrogen during a cyclic deposition process, and forming a tungsten bulk layer during a plasma-enhanced chemical vapor deposition (PE-CVD) process. The PE-CVD process includes exposing the substrate to a deposition gas containing the tungsten precursor while depositing the tungsten bulk layer over the tungsten nucleation layer. In some example, the tungsten nucleation layer has a thickness of less than about 100 Å, such as about 15 Å. In other examples, a carrier gas containing hydrogen is constantly flowed into the process chamber during the cyclic deposition process. | 09-18-2008 |
| 20090156003 | METHOD FOR DEPOSITING TUNGSTEN-CONTAINING LAYERS BY VAPOR DEPOSITION TECHNIQUES - In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and forming a tungsten bulk layer over the tungsten-containing layer by exposing the substrate to a deposition gas comprising the tungsten-containing gas and a reactive precursor gas during a chemical vapor deposition process. In one example, the tungsten-containing layer and the tungsten bulk layer are deposited within the same processing chamber. | 06-18-2009 |
| 20090156004 | METHOD FOR FORMING TUNGSTEN MATERIALS DURING VAPOR DEPOSITION PROCESSES - In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers. | 06-18-2009 |
| 20100093170 | METHOD FOR FORMING TUNGSTEN MATERIALS DURING VAPOR DEPOSITION PROCESSES - In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers. | 04-15-2010 |
Moris Papasmadov, Holon IL
| Patent application number | Description | Published |
|---|---|---|
| 20080208747 | Method for restricting a use of a credit or debit card - A method for restricting a use of a credit or debit card when buying an item, comprising an allocation to said card of an identifier and associated therewith a series of restrictions relating to a buying behaviour, said series of restrictions being stored within an item restrictions database, remote from a point of sale where said item is sold, and wherein when a holder of said card offers said card for payment purpose of said item to be bought, there is checked whether at least one of said restrictions would form an obstacle for paying said item by using said card, and, if at least one of said restrictions would form such an obstacle, said payment by using said card being declined, and wherein upon each payment with said card, said series of restrictions being downloaded from said item restriction database and temporarily stored into a data processing system of said point of sale, said checking being performed by said data processing system of said point of sale. | 08-28-2008 |
Moris Polentes, Vittorio Veneto IT
| Patent application number | Description | Published |
|---|---|---|
| 20100171243 | METHOD FOR RECYCLING ENERGY IN A BLOW MOULDING MACHINE FOR BLOW MOULDING CONTAINERS - A method for recycling energy and related blow moulding machine—for blow moulding plastic material containers including a recycling system for recycling the pneumatic energy of the discharge air coming from the blowing cavities of said machine, capable of recycling the discharge air making it available at a given pressure for a subsequent blowing in a cavity. | 07-08-2010 |
Moris Topaz, Hacovesh IL
| Patent application number | Description | Published |
|---|---|---|
| 20110130712 | WOUND HEALING DEVICE - This invention provides wound healing systems, which delivers oxygen to the wound bed and applies negative pressure thereto, where the source of oxygen and negative pressure are simultaneously applied to distal sites of the dressing. Methods of treating wounds and methods of treating or preventing anaerobic infection of wounds using such systems are described. | 06-02-2011 |