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Morgan, ID
Don Morgan, Meridian, ID US
| Patent application number | Description | Published |
|---|---|---|
| 20110007587 | COMMAND LATENCY SYSTEMS AND METHODS - Examples of command latency systems and methods are described. In some examples, phase information associated with a received command signal is stored, a received command signal is propagated through a reduced clock flip-flop pipeline and the delayed command signal is combined with the stored phase information. The reduced clock flip-flop pipeline may use a clock having a lower frequency than that used to issue the command signal. Accordingly, fewer flip-flops may be required. | 01-13-2011 |
Donald M. Morgan, Meridian, ID US
| Patent application number | Description | Published |
|---|---|---|
| 20090261864 | CURRENT MODE DATA SENSING AND PROPAGATION USING VOLTAGE AMPLIFIER - A method and a circuit for current mode data sensing and propagation by using voltage amplifier are provided. Example embodiments may include providing an output signal from a voltage amplifier in response to the voltage amplifier receiving an input signal. The method may include providing a current output signal from a voltage-to-current converter in response to the voltage-to-current converter receiving the output signal. The output signal may be used to drive a current sense amplifier. | 10-22-2009 |
| 20110013471 | CURRENT MODE DATA SENSING AND PROPAGATION USING VOLTAGE AMPLIFIER - A method and a circuit for current mode data sensing and propagation by using voltage amplifier are provided. Example embodiments may include providing an output signal from a voltage amplifier in response to the voltage amplifier receiving an input signal. The method may include providing a current output signal from a voltage-to-current converter in response to the voltage-to-current converter receiving the output signal. The output signal may be used to drive a current sense amplifier. | 01-20-2011 |
Paul Morgan, Kuna, ID US
| Patent application number | Description | Published |
|---|---|---|
| 20090017627 | Methods of Modifying Oxide Spacers - Methods for reducing line roughness of spacers and other features utilizing a non-plasma and non-wet etch fluoride processing technology are provided. Embodiments of the methods can be used for spacer or line reduction and/or smoothing the surfaces along the edges of such features through the reaction and subsequent removal of material. | 01-15-2009 |
| 20100092891 | PITCH REDUCED PATTERNS RELATIVE TO PHOTOLITHOGRAPHY FEATURES - Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC. The combined pattern made out by the first pattern and the second pattern is transferred to an underlying amorphous silicon layer and the pattern is subjected to a carbon strip to remove BARC and photoresist material. The combined pattern is then transferred to the silicon oxide layer and then to an amorphous carbon mask layer. The combined mask pattern, having features of difference sizes, is then etched into the underlying substrate through the amorphous carbon hard mask layer. | 04-15-2010 |
| 20100210111 | PITCH REDUCED PATTERNS RELATIVE TOPHOTOLITHOGRAPHY FEATURES - Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern. Pitch multiplication is accomplished by patterning an amorphous carbon layer. Sidewall spacers are then formed on the amorphous carbon sidewalls which are then removed; the sidewall spacers defining the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is transferred to the BARC. The combined pattern is transferred to an underlying amorphous silicon layer. The combined pattern is then transferred to the silicon oxide layer and then to an amorphous carbon mask layer. The combined mask pattern, is then etched into the underlying substrate. | 08-19-2010 |
| 20110159688 | Selective Metal Deposition Over Dielectric Layers - Selective deposition of metal over dielectric layers in a manner that minimizes or eliminates keyhole formation is provided. According to one embodiment, a dielectric target layer is formed over a substrate layer, wherein the target layer may be configured to allow conformal metal deposition, and a dielectric second layer is formed over the target layer, wherein the second layer may be configured to allow bottom-up metal deposition. An opening may then be formed in the second layer and metal may be selectively deposited over the substrate layer. | 06-30-2011 |
Paul Morgan, Boise, ID US
| Patent application number | Description | Published |
|---|---|---|
| 20080286975 | PLATINUM NANODET ETCH PROCESS - A method for selectively removing nano-crystals on an insulating layer. The method includes providing an insulating layer with nano-crystals thereon; exposing the nano-crystals to a high density plasma comprising a source of free radical chlorine, ionic chlorine, or both to modify the nano-crystals; and removing the modified nano-crystals with a wet etchant. | 11-20-2008 |
| 20100105211 | NANO-CRYSTAL ETCH PROCESS - A method for selectively removing nano-crystals on an insulating layer. The method includes providing an insulating layer with nano-crystals thereon; exposing the nano-crystals to a high density plasma comprising a source of free radical chlorine, ionic chlorine, or both to modify the nano-crystals; and removing the modified nano-crystals with a wet etchant. | 04-29-2010 |
Paul A. Morgan, Kuna, ID US
| Patent application number | Description | Published |
|---|---|---|
| 20090065026 | Methods For Treating Surfaces, Methods For Removing One Or More Materials from Surfaces, And Apparatuses For Treating Surfaces - Some embodiments include utilization of both plasma and aerosol to treat substrate surfaces. The plasma and aerosol may be utilized simultaneously, or sequentially. In some embodiments, the plasma forms a plasma sheath over the substrate surfaces, with the plasma sheath having an electric field gradient therein. The aerosol comprises liquid particles charged to a polarity, and such polarity is transferred to contaminants on the substrate surfaces through interaction with the aerosol. The polarity may be used to assist in dislodging the contaminants from the substrate surfaces. The electric field of the plasma sheath may then sweep the contaminants away from the substrate surfaces. In some embodiments, multiple different aerosols are formed to remove multiple different types of materials from substrate surfaces. Some embodiments include apparatuses configured for treating substrate surfaces with both plasma and aerosol. | 03-12-2009 |
| 20090275205 | METHODS OF REMOVING SILICON OXIDE AND GASEOUS MIXTURES FOR ACHIEVING SAME - A method of removing at least a portion of a silicon oxide material is disclosed. The silicon oxide is removed by exposing a semiconductor structure comprising a substrate and the silicon oxide to an ammonium fluoride chemical treatment and a subsequent plasma treatment, both of which may be effected in the same vacuum chamber of a processing apparatus. The ammonium fluoride chemical treatment converts the silicon oxide to a solid reaction product in a self-limiting reaction, the solid reaction product then being volatilized by the plasma treatment. The plasma treatment includes a plasma having an ion bombardment energy of less than or equal to approximately 20 eV. An ammonium fluoride chemical treatment including an alkylated ammonia derivative and hydrogen fluoride is also disclosed. | 11-05-2009 |
Robert Morgan, Parma, ID US
| Patent application number | Description | Published |
|---|---|---|
| 20100274328 | LIGHT CONDUCTOR AND TREATMENT FOR AILMENTS INVOLVING THE THROAT - A device for providing therapeutic treatment to a throat comprises an elongated body with a first end and a second end opposite the first end and shaped to temporarily extend from the mouth of a user to a throat area of the user where, during use, the first end is at the mouth and the second end is within the throat area. The device further includes an electrically-powered ultra-violet-frequency light source coupled to the body and an ultra-violet-frequency light emitter at the second end of the body. | 10-28-2010 |
Timothy R. Morgan, Boise, ID US
| Patent application number | Description | Published |
|---|---|---|
| 20100262678 | CONFIGURATION OF A SINGLE-PURPOSE APPLICATION VIA A WEB APPLICATION - Architecture for providing easy and convenient configuration of a single-purpose application (SPA). A web-based SPA is retained on a client device for viewing specific information provided from a web server. A web-based identification component obtains an identity associated with the client device or device user. A website user interface enables the user to enter configuration information of the SPA. Subsequently, the configured SPA receives the requested information from the web server based on the identity. A storage component stores the configuration information on a remote web server and/or the client device for backup purposes. A communications component refreshes the requested information to provide updated information to the user via the SPA. | 10-14-2010 |