| Patent application number | Description | Published |
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| 20090314008 | SELF-COOLED VERTICAL ELECTRONIC COMPONENT - A self-cooled electronic component comprising a vertical monolithic circuit, in which the vertical monolithic circuit is electrically connected in series with a Peltier cooler so that the D.C. current flowing through the circuit supplies the cooler and in which the circuit and the cooler are placed against each other so that the cold surface of the cooler is in thermal contact with the circuit. | 12-24-2009 |
| 20100055507 | HIGH-DENSITY 3-DIMENSIONAL STRUCTURE - A 3-D structure formed in a recess of a substrate delimited by walls, including a large number of rectangle parallelepipedic blades extending from the bottom of the recess to the substrate surface while being oriented perpendicularly to one another and formed in a pattern covering the whole surface of the recess, some blades being non-secant to one of the walls, each non-secant blade being connected to one of the walls by at least another perpendicular blade. | 03-04-2010 |
| 20100078673 | ACTIVE SEMICONDUCTOR COMPONENT WITH A REDUCED SURFACE AREA - A semiconductor component in which the active junctions extend perpendicularly to the surface of a semiconductor chip substantially across the entire thickness thereof. The contacts with the regions to be connected are provided by conductive fingers substantially crossing the entire region with which a contact is desired to be established. | 04-01-2010 |
| 20100144403 | ISOLATED MONOLITHIC ELECTRIC POWER - An isolated monolithic electrical converter including a substrate made of a resistive material, the underside of which has two input electrodes spaced apart from each other, constituting the primary, an insulating layer on the top side of the substrate, and, on the insulating layer, at least two elements made of respectively p-doped and n-doped semiconductor thermoelectric materials electrically connected in series, the ends of the series connection constituting the secondary of the converter. | 06-10-2010 |
| Patent application number | Description | Published |
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| 20090080414 | METHOD OF PROPOGATING MULTIPLE IP TELEPHONY ROUTES, AND A CORRESPONDING LOCATION SERVER AND COMPUTER PROGRAM - A method is provided for propagating routes between a first location server of a first IP telephony domain and a second location server of a second IP telephony domain. The method includes the following stages: the first location server receives a first propagation message from at least one neighboring location server and containing at least two routes enabling a destination to be reached, referred to as propagation routes; and the first location server advertises the at least two routes to at least one second location server of a second telephony domain neighboring the first. | 03-26-2009 |
| 20090175266 | METHOD OF TAKING ACCOUNT OF QUALITY OF SERVICE BETWEEN DISTINCT IP TELEPHONY DOMAINS, AND A CORRESPONDING LOCATION SERVER AND COMPUTER PROGRAM - A method for propagating at least one route for at least one digital stream between a first location server of a first IP telephony domain and a second location server of a second IP telephony domain. The first location server belongs to a first autonomous system and the second location server belongs to a second autonomous system. The method includes sending digital stream routing update messages to the second location server. The update messages contain information for managing quality of service, and, prior to being propagated towards the second server, the information is updated by the first server. The information includes at least one of the following: information about a quality of service component associated with at least one autonomous system, referred to as a system component; and information about a quality of service component associated with at least one IP telephony domain, referred to as a domain component. | 07-09-2009 |
| 20090175267 | METHOD OF PROPAGATING IP CONNECTIVITY INFORMATION BETWEEN DISTINCT IP TELEPHONY DOMAINS, AND A CORRESPONDING LOCATION SERVER AND COMPUTER PROGRAM - A method is provided for propagating at least one route for at least one digital stream between a first location server of a first IP telephony domain and a second location server of a second IP telephony domain, the first location server belonging to an autonomous system, and the route for transferring the at least one digital stream. The method includes a stage of propagating at least one identification relating to the autonomous system of the first location server towards the second server. | 07-09-2009 |
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| 20080197447 | METHOD FOR MANUFACTURING A STRUCTURE OF SEMICONDUCTOR-ON-INSULATOR TYPE - A method for manufacturing an insulated semiconductor layer, including: forming a porous silicon layer on a single-crystal silicon surface; depositing an insulating material so that it penetrates into the pores of the porous silicon layer; eliminating the insulating material to expose the upper surface of the porous silicon; and growing by epitaxy a semiconductor layer. | 08-21-2008 |
| 20080246121 | METHOD OF FABRICATING A DEVICE WITH A CONCENTRATION GRADIENT AND THE CORRESPONDING DEVICE - A semiconductive device is fabricated by forming, within a semiconductive substrate, at least one continuous region formed of a material having a non-uniform composition in a direction substantially perpendicular to the thickness of the substrate. | 10-09-2008 |
| 20090127584 | Transistor with a germanium-based channel encased by a gate electrode and method for producing one such transistor - Source and drain electrodes are each formed by an alternation of first and second layers made from a germanium and silicon compound. The first layers have a germanium concentration comprised between 0% and 10% and the second layers have a germanium concentration comprised between 10% and 50%. At least one channel connects two second layers respectively of the source electrode and drain electrode. The method comprises etching of source and drain zones, connected by a narrow zone, in a stack of layers. Then superficial thermal oxidation of said stack is performed so a to oxidize the silicon of the germanium and silicon compound having a germanium concentration comprised between 10% and 50% and to condense the germanium Ge. The oxidized silicon of the narrow zone is removed and a gate dielectric and a gate are deposited on the condensed germanium of the narrow zone. | 05-21-2009 |
| 20100035414 | METHOD FOR PREPARING A GERMANIUM LAYER FROM A SILICON-GERMANIUM-ON-ISOLATOR SUBSTRATE - A method for making a germanium-on-insulator layer from an SGOI substrate, including: a) depositing on the substrate a layer of a metallic element M capable of selectively forming a silicide, the layer being in contact with a silicon-germanium alloy layer; and b) a reaction between the alloy layer and the layer of a metallic element M, by which a stack of M silicide-germanium-insulator layers is obtained. Such a method may, for example, find application to production of electronic devices such as MOSFET transistors. | 02-11-2010 |
| 20100227125 | METHOD TO FABRICATE A MOULD FOR LITHOGRAPHY BY NANO-IMPRINTING - The invention concerns a nano-imprinting device with three dimensions characterized in that it comprises at least:
| 09-09-2010 |
