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Montez
Jason M. Montez, Rumson, NJ US
| Patent application number | Description | Published |
|---|---|---|
| 20090106853 | Methods and materials using signaling probes - The present invention relates to methods of isolating cells or generating cell lines using signaling probes that produce a signal upon hybridization to a target sequence. Other methods that utilize the signaling probe include methods of quantifying the level of RNA expression, methods for identifying genetic recombinational events in living cells and methods of generating a transgenic animal using the isolated cells. The invention also provides protease probes. Signaling probes and protease probes that form stem-loop structures, three-arm junction structures, and dumbbell structures are provided. | 04-23-2009 |
| 20100028929 | NUCLEIC ACID MOLECULES ENCODING GPR84 - The present invention is an isolated nucleic acid molecule encoding CD36, G | 02-04-2010 |
Jason Michael Montez, Rumson, NJ US
| Patent application number | Description | Published |
|---|---|---|
| 20090148938 | Method for identifying ester coolers - The Transient Receptor Potential Cation Channel, Subfamily A, Member 1 (TRPA1) protein has been identified as an ester cooler receptor and therefore is useful in screening assays for identifying ester coolers, in particular ester coolers with a relative cooling strength which exceeds (−)−menthol. | 06-11-2009 |
Ruben Montez, Cedar Park, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20120107993 | METHOD OF MAKING A MICRO-ELECTRO-MECHANICAL-SYSTEMS (MEMS) DEVICE - A method of forming a MEMS device includes forming a sacrificial layer over a substrate. The method further includes forming a metal layer over the sacrificial layer and forming a protection layer overlying the metal layer. The method further includes etching the protection layer and the metal layer to form a structure having a remaining portion of the protection layer formed over a remaining portion of the metal layer. The method further includes etching the sacrificial layer to form a movable portion of the MEMS device, wherein the remaining portion of the protection layer protects the remaining portion of the metal layer during the etching of the sacrificial layer to form the movable portion of the MEMS device. | 05-03-2012 |
Ruben B. Montez, Cedar Park, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20100155861 | MICROELECTROMECHANICAL DEVICE WITH ISOLATED MICROSTRUCTURES AND METHOD OF PRODUCING SAME - A microelectromechanical systems (MEMS) device ( | 06-24-2010 |
| 20100181676 | SUBSTRATE BONDING WITH METAL GERMANIUM SILICON MATERIAL - A method that in one embodiment is useful in bonding a first substrate to a second substrate includes forming a layer including metal over the first substrate. The layer including metal in one embodiment surrounds a semiconductor device, which can be a micro electromechanical system (MEMS) device. On the second substrate is formed a first layer comprising silicon. A second layer comprising germanium and silicon is formed on the first layer. A third layer comprising germanium is formed on the second layer. The third layer is brought into contact with the layer including metal. Heat (and pressure in some embodiments) is applied to the third layer and the layer including metal to form a mechanical bond material between the first substrate and the second substrate in which the mechanical bond material is electrically conductive. In the case of the mechanical bond surrounding a semiconductor device such as a MEMS, the mechanical bond can be particularly advantageous as a hermetic seal for protecting the MEMS. | 07-22-2010 |
| 20120068325 | SUBSTRATE BONDING WITH METAL GERMANIUM SILICON MATERIAL - In one embodiment, a semiconductor structure including a first substrate, a semiconductor device on the first substrate, a second substrate, and a conductive bond between the first substrate and the second substrate that surrounds the semiconductor device to seal the semiconductor device between the first substrate and the second substrate. The conductive bond comprises metal, silicon, and germanium. A percentage by atomic weight of silicon in the conductive bond is greater than 5%. | 03-22-2012 |