Monnoyer
Maxime Monnoyer, Liege BE
Patent application number | Description | Published |
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20110281031 | Industrial Vapour Generator For Depositing An Alloy Coating On A Metal Strip - The present invention relates to a vacuum deposition facility for depositing a metal alloy coating on a substrate ( | 11-17-2011 |
20130061986 | METHOD FOR COATING A METAL STRIP AND EQUIPMENT FOR IMPLEMENTING SAID METHOD - The invention relates to a process for coating a metal strip, in which a layer of an oxidizable metal or an oxidizable metal alloy or a metal oxide is vacuum-deposited on a metal strip precoated with zinc or with a zinc alloy, the coated metal strip is then coiled, and the wound coil undergoes a static diffusion treatment so as to obtain a strip having a coating that comprises, in the upper portion, a layer of an alloy formed by diffusion of the oxidizable metal or the oxidizable metal alloy in all or part of the zinc or zinc alloy layer, and also to equipment for implementing the process. | 03-14-2013 |
Maxime Monnoyer, Sainte-Marie-Aux-Chenes FR
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20150013409 | Steel Sheet including a Multilayer Coating and Methods - A steel sheet is provided. The steel sheet includes a multilayer coating including at least one zinc-based layer being 0.1% to 20% magnesium by weight which is covered by a fine temporary protective layer of 5 to 100 nm. The fine temporary protective layer is composed of metal or metal oxide selected from the group consisting of aluminum, chromium, aluminum oxides AlOx, with x being strictly between 0.01 and 1.5 and chromium oxides CrOy, with y being strictly between 0.01 and 1.5. The at least one zinc-based layer is not alloyed with the temporary protective layer. Manufacturing methods for a sheet and part are also provided. | 01-15-2015 |
Maxime Monnoyer, Audun Le Roman FR
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20150093594 | Solution for Reducing the Blackening or Tarnishing of a Metal Sheet and Metal Sheet - The present invention provides an aqueous treatment solution containing sulfate ions SO | 04-02-2015 |
Maxime Monnoyer, Sainte Marie Aux Chenes BE
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20160122854 | INSTALLATION FOR HOT DIP COATING A METAL STRIP COMPRISING AN ADJUSTABLE CONFINEMENT BOX - An installation for hot dip coating a metal strip is provided. The installation includes a device for moving the metal strip along a path, a pot for containing a melt bath and a wiping system including at least two nozzles placed on either side of the path downstream the pot. The wiping system has a box with a lower confinement part confining an atmosphere around the metal strip upstream of said nozzles and an upper confinement part confining the atmosphere around the metal strip downstream of the nozzles, first moving means for vertically moving the lower confinement part with respect to the pot and second moving means for vertically moving the upper confinement part with respect to both the pot and the lower confinement part. The nozzles are vertically movable relative to the pot. | 05-05-2016 |
Philippe Monnoyer, Grenoble FR
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20090045164 | "UNIVERSAL" BARRIER CMP SLURRY FOR USE WITH LOW DIELECTRIC CONSTANT INTERLAYER DIELECTRICS - During processing of a semiconductor wafer bearing a structure including a low-k dielectric layer, a cap layer and the metal-diffusion barrier layer, a chemical mechanical polishing method applied to remove the metal-diffusion barrier material involves two phases. In the second phase of the barrier-CMP method, when the polishing interface is close to the low-k dielectric material, the polishing conditions are changed so as to be highly selective, producing a negligible removal rate of the low-k dielectric material. The polishing conditions can be changed in a number of ways including: changing parameters of the composition of the barrier slurry composition, and mixing an additive into the barrier slurry. | 02-19-2009 |
20090209103 | BARRIER SLURRY COMPOSITIONS AND BARRIER CMP METHODS - A new barrier slurry composition enables metal and barrier layer material (as well as cap layer material, if necessary) to be removed at a practical rate whilst eliminating, or significantly reducing, the removal of underlying low-k or ultra-low-k dielectric material. The barrier slurry composition comprises: water, an oxidizing agent such as hydrogen peroxide, an abrasive such as colloidal silica abrasive, a complexing agent such as citrate, and may comprise a corrosion inhibitor such as benzotriazole. The preferential removal of cap layer material relative to underlying ULK dielectric material can be enhanced by including in the barrier slurry composition a first additive, such as sodium bis(2-ethylhexyl) sulfosuccinate. The removal rate of the barrier layer material can be tuned by including in the barrier slurry composition a second additive, such as ammonium nitrate. | 08-20-2009 |
20100200995 | COUPLING LAYER COMPOSITION FOR A SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, METHOD OF FORMING THE COUPLING LAYER, AND APPARATUS FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE - Molecules of a coupling layer composition in a semiconductor device are bidimensionally polymerized in order to provide enhanced moisture blocking effect, particularly when the coupling layer is formed on a porous layer, such as a porous dielectric layer. The deposition of the coupling layer on the underlying structure and/or the cross-polymerization of the coupling layer composition and/or a final metallization can be photo-activated, especially, but not only, using an ultraviolet light. | 08-12-2010 |
20100273330 | RINSE FORMULATION FOR USE IN THE MANUFACTURE OF AN INTEGRATED CIRCUIT - The present invention relates to a solution for treating a surface of a substrate for use in a semiconductor device. More particularly, the present invention relates to a liquid rinse formulation for use in semiconductor processing, wherein the liquid formulation contains: i. a surface passivation agent; and ii. an oxygen scavenger, wherein the pH of the rinse formulation is 8.0 or greater. | 10-28-2010 |
Philippe Monnoyer, Grenoble BE
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20080282778 | Method For Testing a Slurry Used to Form a Semiconductor Device - A method for forming a semiconductor device, the method includes providing a semiconductor substrate, applying a slurry to the semiconductor substrate, wherein the slurry was tested using a testing method includes taking a first undiluted sample from a top of the slurry; determining a first particle size distribution characteristic of the first undiluted sample; taking a second undiluted sample from a bottom of the slurry; determining a second particle size distribution characteristic of the second undiluted sample; and comparing a difference between the first particle size distribution characteristic and the second particle size distribution characteristics with a first predetermined value. | 11-20-2008 |