Patent application number | Description | Published |
20080197451 | High-voltage variable breakdown voltage (BV) diode for electrostatic discharge (ESD) applications - Formation of an electrostatic discharge (ESD) protection device having a desired breakdown voltage (BV) is disclosed. The breakdown voltage (BV) of the device can be set, at least in part, by varying the degree to which a surface junction between two doped areas is covered. This junction can be covered in one embodiment by a dielectric material and/or a semiconductor material. Moreover, a variable breakdown voltage can be established by concurrently forming, in a single process flow, multiple diodes that have different breakdown voltages, where the diodes are also formed concurrently with circuitry that is to be protected. To generate the variable or different breakdown voltages, respective edges of isolation regions can be extended to cover more of the surface junctions of different diodes. In this manner, a first diode can have a first breakdown voltage (BV | 08-21-2008 |
20090023263 | METHOD TO MANUFACTURE A THIN FILM RESISTOR - A method for manufacturing a semiconductor device that method comprises forming a thin film resistor by a process that includes depositing a resistive material layer on a semiconductor substrate. The process also includes depositing an insulating layer on the resistive material layer, and performing a first dry etch process on the insulating layer to form an insulative body. The process further includes performing a second dry etch process on the resistive material layer to form a resistive body. The resistive body and the insulative body have substantially identical perimeters. | 01-22-2009 |
20100193868 | HIGH-VOLTAGE VARIABLE BREAKDOWN VOLTAGE (BV) DIODE FOR ELECTROSTATIC DISCHARGE (ESD) APPLICATIONS - Formation of an electrostatic discharge (ESD) protection device having a desired breakdown voltage (BV) is disclosed. The breakdown voltage (BV) of the device can be set, at least in part, by varying the degree to which a surface junction between two doped areas is covered. This junction can be covered in one embodiment by a dielectric material and/or a semiconductor material. Moreover, a variable breakdown voltage can be established by concurrently forming, in a single process flow, multiple diodes that have different breakdown voltages, where the diodes are also formed concurrently with circuitry that is to be protected. To generate the variable or different breakdown voltages, respective edges of isolation regions can be extended to cover more of the surface junctions of different diodes. In this manner, a first diode can have a first breakdown voltage (BV | 08-05-2010 |
20110050275 | SEMICONDUCTOR WAFER HAVING TEST MODULES INCLUDING PIN MATRIX SELECTABLE TEST DEVICES - A semiconductor wafer includes a plurality of die areas including circuit elements, and at least one test module (TM) on the wafer outside the die areas. The TMs include a test circuit including plurality of test transistors arranged in a plurality of rows and columns. The plurality of test transistors include at least three terminals (G, S, D and B). The TMs each include a plurality of pads. The pads include a first plurality of locally shared first pads each coupled to respective ones of a first of the three terminals, a second plurality of locally shared second pads each coupled to respective ones of a second of the three terminals, and at least one of the plurality of pads coupled to a third of the three terminals. The TM provides at least 2 pin transistor selection for uniquely selecting from the plurality of test transistors for testing. | 03-03-2011 |
20110278693 | HIGH-VOLTAGE VARIABLE BREAKDOWN VOLTAGE (BV) DIODE FOR ELECTROSTATIC DISCHARGE (ESD) APPLICATIONS - Formation of an electrostatic discharge (ESD) protection device having a desired breakdown voltage (BV) is disclosed. The breakdown voltage (BV) of the device can be set, at least in part, by varying the degree to which a surface junction between two doped areas is covered. This junction can be covered in one embodiment by a dielectric material and/or a semiconductor material. Moreover, a variable breakdown voltage can be established by concurrently forming, in a single process flow, multiple diodes that have different breakdown voltages, where the diodes are also formed concurrently with circuitry that is to be protected. To generate the variable or different breakdown voltages, respective edges of isolation regions can be extended to cover more of the surface junctions of different diodes. In this manner, a first diode can have a first breakdown voltage (BV | 11-17-2011 |