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Mizunaga
Kouichi Mizunaga, Koshi City JP
| Patent application number | Description | Published |
|---|---|---|
| 20110085299 | Substrate cooling apparatus, substrate cooling method, and storage medium - A substrate cooling apparatus is configured to include: a mounting table including a mounting surface for mounting a substrate thereon; a projection provided on the mounting surface for supporting a rear surface of the substrate; a coolant flow path through which a coolant flows, provided in the mounting table for cooling the mounting surface; a plurality of gas discharge ports provided in a circumferential direction at a peripheral edge portion of the mounting surface for discharging a cooling gas for cooling the substrate; a gas suction port provided at a center portion of the mounting surface for sucking the cooling gas; and a groove provided in the mounting surface for diffusing the cooling gas in a circumferential direction of the substrate. The substrate cooling apparatus configured as described above can cool the substrate mounted on the mounting surface with high uniformity. | 04-14-2011 |
Kouichi Mizunaga, Koshi-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090020072 | Chemical solution vaporizing tank and chemical solution treating system - An object is to suppress differences in concentration between processing gases supplied to a plurality of works in a chemical solution vaporizing tank. The chemical solution vaporizing tank includes a tank body having a plurality of vaporizing chambers formed by laterally and airtightly partitioning an internal space of the tank body, a chemical solution passage located under a liquid level in each vaporizing chamber and formed at each partition member for passing the chemical solution between the vaporizing chambers, and a gas passage located above the liquid level in each vaporizing chamber and formed at the partition member to communicate the vaporizing chambers with each other for uniformizing pressures in the respective vaporizing chambers. A quantity of the channel layer in each vaporizing chamber is controlled by managing, e.g., the liquid level. | 01-22-2009 |
| 20100199911 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus including: a heating part for heating a wafer; a transport part through which a wafer is transported; a first transfer arm that receives a wafer from the heating part and places the wafer on the transport part; and a second transfer arm including a pair of plate-like tweezers that receives the wafer placed on the transport part from the transport part and transfers the wafer. The transport part includes a cooling plate having a cooling surface on which a wafer is placed. The cooling plate includes a temperature-adjusting channel through which a temperature-adjusting water is circulated for cooling the cooling plate to a temperature lower than a temperature of the heating process of the heating part. The cooling surface is provided with a recess that is similar in shape to and slightly larger than a planar shape of the pair of tweezers. | 08-12-2010 |
Satoshi Mizunaga, Nirasaki-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20120015525 | METHOD OF CLEANING A THIN FILM FORMING APPARATUS, THIN FILM FORMING METHOD, AND THIN FILM FORMING APPARATUS - A method of cleaning a thin film forming apparatus, for removing deposits adhering to an inside thereof after supplying a film-forming gas into a reaction chamber to form a amorphous carbon film on a workpiece, includes a heating operation of heating at least one of an inside of the reaction chamber and an inside of an exhaust pipe connected to the reaction chamber to a predetermined temperature; and a removing operation of supplying a cleaning gas containing oxygen gas and hydrogen gas into at least one of the inside of the reaction chamber and the inside of the exhaust pipe heated in the heating operation, heating the cleaning gas to the predetermined temperature to activate the oxygen gas and the hydrogen gas contained in the cleaning gas, and thereafter removing the deposits adhering to the inside of the thin film forming apparatus by the oxygen gas and the hydrogen gas activated. | 01-19-2012 |
Sunao Mizunaga, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090212826 | HYSTERESIS COMPARATOR - Disclosed herein is a hysteresis comparator for performing a binarization determination with respect to an input signal having a consecutively varying voltage level based on two threshold voltages having different voltage levels and generating an output signal based on a result of the determination. The hysteresis comparator includes a top peak detector for detecting a top peak of the input signal and generating a top peak detect voltage based on the detected top peak, a bottom peak detector for detecting a bottom peak of the input signal and generating a bottom peak detect voltage based on the detected bottom peak, a threshold voltage generator for generating the first and second threshold voltages within a range between a voltage level of the top peak detect voltage and a voltage level of the bottom peak detect voltage, and a voltage comparison circuit for comparing the voltage level of the input signal with the voltage levels of the first and second threshold voltages to perform the binarization determination with respect to the input signal, and generating the output signal based on the determination result. | 08-27-2009 |