Mizokuchi
Chikaaki Mizokuchi, Kanagawa JP
Patent application number | Description | Published |
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20130286308 | LATERAL ELECTRIC FIELD TYPE LIQUID CRYSTAL DISPLAY DEVICE - To stabilize the alignment direction in the boundary between two regions in a structure in which a pixel includes two regions where the initial alignment directions of the liquid crystal are orthogonal to each other. A pixel is divided into a first region, a second region, and a boundary region between those regions. The initial alignment directions of the liquid crystal in the first region and the second region are orthogonal to each other, the extending directions of the pixel electrode in the first region and the second region are also orthogonal to each other. The extending direction of the pixel electrode in the first region meets the pixel electrode of the second region when extended. The initial alignment direction of the liquid crystal in the boundary region is a direction rotated in a same rotating direction from the initial alignment direction of the first region at an acute angle. | 10-31-2013 |
Chikaaki Mizokuchi, Kawasaki JP
Patent application number | Description | Published |
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20150103294 | LIQUID CRYSTAL PANEL AND MANUFACTURING METHOD OF THE SAME - Provided are a liquid crystal panel and a method of manufacturing method of manufacturing a liquid crystal panel. The liquid crystal panel includes a first transparent substrate; a second transparent substrate; and a liquid crystal layer formed between the first transparent substrate and the second transparent substrate. The first transparent substrate and the second transparent substrate have transparency in a visible light region and an ultraviolet absorptive property. At least one of the first transparent substrate and the second transparent substrate includes a structure arranged in a predetermined region thereof, where the structure transmits ultraviolet rays in a specific wavelength range. | 04-16-2015 |
Shuji Mizokuchi, Kyoto JP
Patent application number | Description | Published |
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20080299727 | Vertical trench gate transistor semiconductor device and method for fabricating the same - A first region functioning as a transistor includes a drain region, a body region formed over the drain region, a source region formed over the body region and a trench formed through the body region and having a gate electrode buried therein. A source region is formed over the body region extending in a second region. The source region forming an upper edge of the trench is rounded. | 12-04-2008 |
20100127322 | VERTICAL TRENCH GATE TRANSISTOR SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A first region functioning as a transistor includes a drain region, a body region formed over the drain region, a source region formed over the body region and a trench formed through the body region and having a gate electrode buried therein. A source region is formed over the body region extending in a second region. The source region forming an upper edge of the trench is rounded. | 05-27-2010 |
Shuji Mizokuchi, Nilgata JP
Patent application number | Description | Published |
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20090108344 | SEMICONDUCTOR APPARATUS - The present invention provides a semiconductor apparatus having high reliability with respect to a withstand voltage, leakage characteristics, etc. by disposing a structure of preventing stress occurring by metal wiring from directly acting on a trench relating to the semiconductor apparatus having a trench gate. The semiconductor apparatus of the invention includes a semiconductor substrate including a semiconductor layer having a predetermined impurity concentration, a trench gate formed in the semiconductor layer by filling a stripe-shaped trench by a conductor layer on which surface and interface a gate oxide film is formed, an insulating film covering a surface of the semiconductor layer and having a source contact opening, a source region formed in the semiconductor layer, a source electrode formed on the surface of the semiconductor layer so as to electrically connect to the source region through the source contact opening, a gate peripheral wiring connected to the trench gate at a peripheral edge part of the trench gate, a gate electrode separately formed from the source electrode, formed above the surface of the semiconductor layer and connected to the gate peripheral wiring and a drain electrode formed on an surface of the semiconductor substrate opposite to the surface of the semiconductor layer, wherein the trench gate is formed so as to avoid a corner portion of the source contact opening of the source electrode. | 04-30-2009 |
Shuji Mizokuchi, Niigata JP
Patent application number | Description | Published |
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20080211017 | Semiconductor Device - A semiconductor substrate is formed with trenches, and each of the trenches includes: a gate electrode portion in which a gate electrode is arranged; and a gate lead portion which is brought into contact with an interconnect for electrically connecting the gate electrode to the outside. In the gate lead portion for electrically connecting the gate electrode to the outside, an end of each of the trenches has a greater width than a portion of the trench other than the end. | 09-04-2008 |
20130037881 | SEMICONDUCTOR DEVICE WITH VERTICAL GATE AND METHOD OF MANUFACTURING THE SAME - A gate electrode is formed in a trench reaching a drain region so as to leave a concave portion on the top of the trench. A first insulating film is formed, which fills the concave portion and of which the thickness increases as the distance from an end of the trench increases on the substrate surface on both sides of the trench. First and second source regions are formed in a self-alignment manner by introduction of impurities through the first insulating film. | 02-14-2013 |