| Patent application number | Description | Published |
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| 20100026728 | DISPLAY DEVICE AND SIGNAL CONVERTING DEVICE - A display device includes a multi-primary-color display panel with subpixels arranged in a matrix pattern of columns and rows; and a signal converter arranged to convert a video signal, having values that represent the colors of pixels with a matrix pattern, into a multi-primary-color signal for use in the multi-primary-color display panel. The signal converter associates a value of the video signal representing the color of at least one of pixels on a p | 02-04-2010 |
| 20100066956 | DISPLAY DEVICE - A display device which has a wide color gamut and is able to display bright red, includes a plurality of pixels each defined by a plurality of subpixels. The plurality of subpixels include first and second red subpixels for displaying red, a green subpixel for displaying green, a blue subpixel for displaying blue, and a yellow subpixel for displaying yellow. The blue subpixel and the yellow subpixel are contiguous with each other. | 03-18-2010 |
| 20100207969 | MULTIPLE-PRIMARY-COLOR LIQUID CRYSTAL DISPLAY DEVICE - A multi-primary-color liquid crystal display device that can get a display operation done more smoothly and with higher definition than a conventional one is provided. | 08-19-2010 |
| 20110128309 | MULTI-PRIMARY COLOR DISPLAY DEVICE - A multi-primary color display device according to the present invention includes pixels, each having a plurality of sub-pixels. The plurality of sub-pixels include first, second, third and fourth sub-pixels for displaying first, second, third and fourth colors having first, second, third and fourth hues. The second and third hues are adjacent to the first hue on both sides thereof on an a*b* plane of an L*a*b* colorimetric system. When a color displayed by each pixel changes from black to an optimal color of the first hue, luminance values of the plurality of sub-pixels are set such that the luminance value of the first sub-pixel starts to be increased and also the luminance values of the second and third sub-pixels start to be increased at a rate of increase lower than the rate of increase of the first sub-pixel. | 06-02-2011 |
| Patent application number | Description | Published |
|---|
| 20090189190 | High Electron Mobility Transistor, Field-Effect Transistor, Epitaxial Substrate, Method of Manufacturing Epitaxial Substrate, and Method of Manufacturing Group III Nitride Transistor - Affords high electron mobility transistors having a high-purity channel layer and a high-resistance buffer layer. A high electron mobility transistor | 07-30-2009 |
| 20100059761 | SCHOTTKY BARRIER DIODE - A Schottky barrier diode includes a GaN freestanding substrate having a front surface, a GaN epitaxial layer deposited on the front surface, and an insulation layer deposited on the GaN epitaxial layer at a front surface and having an opening. Furthermore, the Schottky barrier diode also includes an electrode. The electrode is configured by a Schottky electrode provided in the opening in contact with the GaN epitaxial layer, and a field plate electrode connected to the Schottky electrode and also overlapping the insulation layer. The GaN freestanding substrate has a dislocation density of at most 1×10 | 03-11-2010 |
| 20100224952 | SCHOTTKY BARRIER DIODE AND METHOD OF PRODUCING THE SAME - A Schottky barrier diode includes an epitaxial growth layer disposed on a substrate and having a mesa portion, and a Schottky electrode disposed on the mesa portion, wherein a distance between an edge of the Schottky electrode and a top surface edge of the mesa portion is 2 μm or less. Since the distance x is 2 μm or less, a leakage current is significantly decreased, a breakdown voltage is improved, and a Schottky barrier diode having excellent reverse breakdown voltage characteristics is provide. | 09-09-2010 |
| 20110133210 | SCHOTTKY BARRIER DIODE AND METHOD FOR MANUFACTURING SCHOTTKY BARRIER DIODE - A method for manufacturing a Schottky barrier diode includes the following steps. First, a GaN substrate is prepared. A GaN layer is formed on the GaN substrate. A Schottky electrode including a first layer made of Ni or Ni alloy and in contact with the GaN layer is formed. The step of forming the Schottky electrode includes a step of forming a metal layer to serve as the Schottky electrode and a step of heat treating the metal layer. A region of the GaN layer in contact with the Schottky electrode has a dislocation density of 1×10 | 06-09-2011 |
| 20110309376 | METHOD OF CLEANING SILICON CARBIDE SEMICONDUCTOR, SILICON CARBIDE SEMICONDUCTOR, AND SILICON CARBIDE SEMICONDUCTOR DEVICE - A method of cleaning an SiC semiconductor capable of exhibiting an effect of cleaning an SiC semiconductor is provided. An SiC semiconductor and an SiC semiconductor device capable of achieving improved characteristics are provided. The method of cleaning an SiC semiconductor includes the steps of forming an oxide film on a surface of an SiC semiconductor (step S | 12-22-2011 |
