Patent application number | Description | Published |
20080284882 | SOLID STATE IMAGING APPARATUS, METHOD FOR DRIVING THE SAME AND CAMERA USING THE SAME - A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections. | 11-20-2008 |
20080303058 | SOLID STATE IMAGING DEVICE AND METHOD FOR FABRICATING THE SAME - A solid state imaging device includes a pixel having a photoelectric conversion element formed on a semiconductor substrate. The photoelectric conversion element includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and forming a junction therebetween; a third semiconductor layer formed on the second semiconductor layer and having a smaller band gap energy than the second semiconductor layer, the third semiconductor layer being made of a single-crystal semiconductor and containing an impurity; and a fourth semiconductor layer of the first conductivity type covering a side surface and an upper surface of the third semiconductor layer. Provision of the fourth semiconductor layer can reduce a current flowing in dark conditions. | 12-11-2008 |
20090002538 | SOLID STATE IMAGING APPARATUS, METHOD FOR DRIVING THE SAME AND CAMERA USING THE SAME - A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections. | 01-01-2009 |
20090014759 | SOLID STATE IMAGING APPARATUS AND METHOD FOR FABRICATING THE SAME - A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively. | 01-15-2009 |
20090021626 | SOLID STATE IMAGING APPARATUS AND METHOD FOR FABRICATIG THE SAME - A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively. | 01-22-2009 |
20090039387 | SOLID-STATE IMAGING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A solid-state imaging element includes a layered substrate made of silicon and composed of, for example, an N-type substrate, a P-type layer, and an N-type layer. In the layered substrate, an imaging region in which a plurality of pixels are arranged and a peripheral circuit region are formed. A recess reaching the reverse face of the P-type layer is formed in a reverse face portion of the layered substrate in the imaging region, and a reflective film is formed on at least the inner face of the recess. Light is reflected on the reverse face and the obverse face of the layered substrate. | 02-12-2009 |
20100133592 | SOLID-STATE IMAGING DEVICE - A plurality of pixel portions ( | 06-03-2010 |
20100220228 | SOLID-STATE IMAGE SENSOR - A solid-state image sensor includes: a semiconductor substrate | 09-02-2010 |
20100327332 | SOLID STATE IMAGING DEVICE - A solid state imaging device having a pixel area in which a plurality of light receiving elements are arranged, and a peripheral circuit area adjacent to the pixel area includes: a semiconductor substrate | 12-30-2010 |
20110121162 | SOLID-STATE IMAGING DEVICE AND DIFFERENTIAL CIRCUIT - A solid-state imaging device that is configurable into a small size appropriate for expanding dynamic range includes: a photodiode which is a photoelectric conversion unit that generates charge by incident light; a MOS transistor which is connected to the photodiode and transfers the charge; a floating diffusion region which is a first accumulation unit which accumulates the charge via the MOS transistor; a MOS transistor which is a second transfer unit connected to the floating diffusion region and connected in series to the MOS transistor; and a MOS transistor which is an output unit which outputs, via the MOS transistor, a signal voltage in accordance with an amount of the charge. | 05-26-2011 |
20110284929 | SOLID STATE IMAGING DEVICE - In each of pixels | 11-24-2011 |
20110291162 | SOLID STATE IMAGING DEVICE - Each of pixels | 12-01-2011 |
20120098040 | SOLID STATE IMAGING APPARATUS, METHOD FOR DRIVING THE SAME AND CAMERA USING THE SAME - A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections. | 04-26-2012 |
20120211851 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes semiconductor substrate; a plurality of photoelectric conversion sections of n-type that are formed at an upper part of semiconductor substrate and arranged in a matrix; output circuit that is formed on a charge detection surface that is one surface of semiconductor substrate and detects charges stored in photoelectric conversion sections; a plurality of isolating diffusion layers of a p-type that are formed under output circuit and include high concentration p-type layers adjacent to respective photoelectric conversion sections; and color filters formed on a light incident surface that is the other surface opposing the one surface of semiconductor substrate and transmit light with different wavelengths. Shapes of respective photoelectric conversion sections correspond to color filters and differ depending on the high concentration p-type layer configuring isolating diffusion layer. | 08-23-2012 |
20120217494 | SOLID-STATE IMAGING DEVICE - Solid-state imaging device of the present invention is a backside-illumination-type solid-state imaging device including wiring layer formed on first surface side of semiconductor substrate; and light receiving section that photoelectrically converts light incident from second surface side that is opposite from first surface side, wherein spontaneous polarization film formed of a material having spontaneous polarization is formed on a light receiving surface of light receiving section. Accordingly, a hole accumulation layer can be formed on the light receiving surface of light receiving section, and a dark current can be suppressed. | 08-30-2012 |
20130075591 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device according to the present invention includes pixels which are arranged two-dimensionally and each of which includes: a light absorbing layer that converts light into signal charges; a signal read circuit to read out the signal charges, the signal read circuit being formed on a side opposite to a light incident plane side of the light absorbing layer; a metal layer that is formed on the light incident plane side of the light absorbing layer, the metal layer having an aperture to transmit, into the light absorbing layer, light of a wavelength range depending on a shape of the aperture, a driving circuit that applies a voltage to the metal layer to generate, in the light absorbing layer, a potential gradient to collect the signal charges. | 03-28-2013 |
20130134536 | SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SOLID-STATE IMAGING DEVICE - A solid-state imaging device in which a plurality of pixels are two-dimensionally arranged, the solid-state imaging device includes: a silicon layer; a plurality of photodiodes which are formed in the silicon layer to correspond to the pixels and generate signal charges by performing photoelectric conversion on incident light; and a plurality of color filters formed above the silicon layer to correspond to the plurality of the pixels, wherein a protrusion is formed in a region on a side of the silicon layer between adjacent ones of the color filters, the protrusion having a refractive index lower than refractive indices of the adjacent ones of the color filters and, each of the color filters is in contact with the adjacent ones of the color filters, above the protrusion. | 05-30-2013 |
20130314574 | SOLID-STATE IMAGING DEVICE AND METHOD OF DRIVING THE SAME - A solid-state imaging device includes: pixels arrayed two-dimensionally; pixel common circuits arrayed in a matrix, each shared by adjacent pixels of a certain number among the pixels; column common circuits, each provided for one of columns of the pixel common circuits, and shared by pixel common circuits belonging to a same column; column signal lines each provided for one of the columns of the pixel common circuits; and reset signal lines each provided for one of the columns of the pixel common circuits, in which an electric signal from each of the pixels is detected by a corresponding one of the pixel common circuits and read by a corresponding one of the column common circuits, and the electric signal detected by the corresponding one of the pixel common circuits is reset by a feedback path including one column signal line, one column common circuit, and one reset signal lines. | 11-28-2013 |
20140054737 | SOLID-STATE IMAGING DEVICE AND METHOD FOR FABRICATING THE SAME - A solid-state imaging device includes: a substrate; an insulator layer formed on the substrate; a semiconductor layer formed on the insulator layer; and a silicon layer formed on the semiconductor layer. The silicon layer includes a plurality of pixels each including a photoelectric converter configured to convert light into signal charge, and a circuit configured to read the signal charge, and a refractive index of the insulator layer is lower than a refractive index of the semiconductor layer. | 02-27-2014 |
20140103400 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode and for converting light into signal charges; a second electrode formed on the photoelectric conversion film; a charge accumulation region electrically connected to the first electrode and for accumulating the signal charges converted from the light by the photoelectric conversion film; a reset gate electrode for resetting the charge accumulation region; an amplification transistor for amplifying the signal charges accumulated in the charge accumulation region; and a contact plug in direct contact with the charge accumulation region, comprising a semiconductor material, and for electrically connecting to each other the first electrode and the charge accumulation region. | 04-17-2014 |
20140146211 | SOLID-STATE IMAGING DEVICE AND DRIVING METHOD OF SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes: an epilayer; pixel electrodes; a photoelectric converting film formed above the pixel electrodes and converting incident light into electric signals; a transparent electrode formed on the photoelectric converting film; | 05-29-2014 |
20140246706 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes: pixels arranged in a matrix, a semiconductor substrate; a first electrode formed above the semiconductor substrate for each of the pixels; a photoelectric conversion film formed on the first electrode, for photoelectric conversion of light into signal charge; a charge accumulation region formed in the semiconductor substrate for accumulating the signal charge generated through the photoelectric conversion in the photoelectric conversion film; a contact plug for electrically connecting the first electrode and the charge accumulation region in a corresponding pixel; a high-concentration impurity region formed on a surface of the charge accumulation region, in a region in contact with the contact plug; a surface impurity region formed on the surface of the charge accumulation region, in a region not in contact with the contact plug; and a low-concentration impurity region formed between the high-concentration impurity region and the surface impurity region. | 09-04-2014 |