| Patent application number | Description | Published |
|---|
| 20090014735 | Semiconductor device and semiconductor device fabrication method - There is provided a semiconductor device in which a light emitting element is mounted on a substrate, having a bonding wire which is connected to the light emitting element, and a through electrode which is connected to the bonding wire and is formed in such a manner as to pass through the substrate at a position lying directly below a connecting portion with the bonding wire. | 01-15-2009 |
| 20090020887 | SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD THEREOF - In a semiconductor apparatus in which plural semiconductor elements are stacked, metal wires whose one ends are connected to electrode terminals of the semiconductor elements are extended to the side surfaces of the semiconductor elements in an abutment state and the metal wires extended to the side surfaces of the semiconductor elements are bonded to a side surface wiring formed on side surfaces of the semiconductor elements by a conductive paste containing conductive particles. | 01-22-2009 |
| 20090039379 | HEAT RADIATION PACKAGE AND SEMICONDUCTOR DEVICE - A heat radiation package of the present invention includes a substrate in an upper surface side of which recess portion is provided, embedded wiring portion which is filled in the recess portion of the substrate and on which semiconductor element which generates a heat is mounted, and a heat sink connected to a lower surface side of the substrate. The substrate is made of silicon, ceramics, or insulating resin. | 02-12-2009 |
| 20090040715 | SEMICONDUCTOR DEVICE - A semiconductor device of the present invention includes a wiring substrate, a plurality of semiconductor chips mounted on the wiring substrate, and a radiation plate arranged over a plurality of semiconductor chips, and having a cooling passage to flow water in a horizontal direction to the wiring substrate. A plurality of semiconductor chips are arranged along the cooling passage, and out of the plurality of semiconductor chips, the semiconductor chip arranged on an inflow side of the cooling passage, has a smaller amount of heat generation than the semiconductor chip arranged on an outflow side of the cooling passage. For example, a memory chip is arranged on the inflow side of the cooling passage, and a logic chip is arranged on the outflow side of the cooling passage. | 02-12-2009 |
| 20090130838 | METHOD OF FORMING CONDUCTIVE BUMPS - A method of forming a conductive bump of the present invention, includes the steps of, preparing a substrate including a connection pad and a protection insulating layer, in which an opening portion is provided on the connection pad, on a surface layer side, arranging a first conductive ball, at least an outer surface portion of which is made of solder, on the connection pad in the opening portion of the protection insulating layer, filling a solder layer in the opening portion by applying a reflow heating to the first conductive ball, arranging a second conductive ball on the solder layer, and obtaining a conductive bump which protrudes from an upper surface of the protection insulating layer, by joining the solder layer and the second conductive ball by a reflow heating. | 05-21-2009 |
| 20090206471 | Electronic parts packaging structure and method of manufacturing the same - An electronic parts packaging structure of the present invention includes a wiring substrate having a wiring pattern, a first insulating film which is formed on the wiring substrate and which has an opening portion in a packaging area where an electronic parts is mounted, the electronic parts having a connection terminal flip-chip mounted on the wiring pattern exposed in the opening portion of the first insulating film, a second insulating film for covering the electronic parts, a via hole formed in a predetermined portion of the first and second insulating films on the wiring pattern, and an upper wiring pattern formed on the second insulating film and connected to the wiring pattern through the via hole. | 08-20-2009 |
| 20100155862 | PACKAGE FOR ELECTRONIC COMPONENT, MANUFACTURING METHOD THEREOF AND SENSING APPARATUS - A package for electronic component comprises a rectangular package body having a flat cut surface to be abutted on a flat mounting surface of a mounting substrate, a first side surface intersecting with the flat cut surface, and a first notch part formed at a boundary between the flat cut surface and the first side surface, an electronic component installed in the package body, and a first pad electrically connected to the electronic component and formed on an inner wall surface of the first notch part. | 06-24-2010 |
| 20100193939 | WIRING SUBSTRATE, ELECTRONIC DEVICE, AND ELECTRONIC DEVICE MOUNTING STRUCTURE - A wiring substrate includes a silicon substrate, a through hole formed to penetrate the silicon substrate in a thickness direction, an insulating layer formed on both surfaces and side surfaces of the silicon substrate and an inner surface of the through hole, a penetration electrode formed in the through hole, a wiring layer formed on at least one surface of the silicon substrate and connected to the penetration electrode, and a metal wire terminal connected to the wiring layer and formed to extend from one surface of the silicon substrate to a side surface thereof. The metal wire terminal on the side surface of the electronic device is connected to the mounting substrate such that a substrate direction of the electronic device in which an electronic component is mounted on the wiring substrate intersects orthogonally with a substrate direction of the mounting substrate. | 08-05-2010 |
| 20100207218 | ELECTRONIC COMPONENT DEVICE, AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing an electronic component device, includes the steps of preparing a wiring substrate, which includes a silicon substrate, a concave portion provided on its upper surface side, a through hole formed to penetrate the silicon substrate on a bottom surface side of the concave portion, an insulating layer formed on the silicon substrate, a penetration electrode constructed by a lower conductor portion formed to a halfway position of a height direction from a bottom portion of the through hole and a connection metal member (indium layer) formed on the lower conductor portion in the through hole, and an electronic component having a terminal metal member (gold bump) on a lower surface side, and softening the connection metal member of the wiring substrate in a heating atmosphere and then sticking the terminal metal member of the electronic component into the connection metal member and connecting thereto. | 08-19-2010 |
