| Patent application number | Description | Published |
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| 20100129960 | METHOD FOR BONDING SEMICONDUCTOR WAFERS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - In a method for bonding semiconductor wafers of the present invention, a bonding layer containing a flux-active curing agent and a thermosetting resin is interposed between a first semiconductor wafer and a second semiconductor wafer, thereby producing a semiconductor wafer stacked body in which the first and second semiconductor wafers are stacked together, and then the semiconductor wafer stacked body is compressed in a thickness direction thereof while heating it so that the first and second semiconductor wafers are fixed together by melting and solidifying solder bumps while curing the thermosetting resin, thereby producing a semiconductor wafer bonded body in which first connector portions and second connector portions are electrically connected together through solidified products obtained by melting and solidifying the solder bumps. | 05-27-2010 |
| 20100213597 | SEMICONDUCTOR ELEMENT MOUNTING BOARD - A semiconductor element mounting board includes: aboard having surfaces; a semiconductor element mounted on one of the surfaces of the board; a first layer into which the semiconductor element is embedded, the first layer being provided on the one surface of the board; a second layer provided on the other surface of the board, the second layer being constituted from the same material as that of the first layer, the constituent material of the second layer having the same composition ratio as that of the constituent material of the first layer; and surface layers provided on the first and second layers, respectively, each of the surface layers being formed from at least a single layer. In such a semiconductor element mounting board, each of the surface layers has rigidity higher than that of each of the first and second layers. It is preferred that in the case where a Young's modulus of each surface layer at 25° C. is defined as X GPa and a Young's modulus of the first layer at 25° C. is defined as Y GPa, the X and the Y satisfy a relation of 0.5≦X−Y≦13. | 08-26-2010 |
| 20110084409 | SEMICONDUCTOR ELEMENT MOUNTING BOARD - A semiconductor element mounting board includes: a board having surfaces; a semiconductor element provided at a side of one of the surfaces of the board; a bonding agent layer through which the board and the semiconductor element are bonded together, the bonding agent layer having a storage modulus at 25° C. of 5 to 1,000 MPa; a first layer into which the semiconductor element is embedded, the first layer provided on the one surface of the board; a second layer provided on the other surface of the board, the second layer being constituted from the same material as that of the first layer, the constituent material of the second layer having the same composition ratio as that of the constituent material of the first layer; and surface layers provided on the first and second layers, respectively, each of the surface layers being formed from at least a single layer. In the semiconductor element mounting board, a coefficient of thermal expansion of each surface layer in an inplane direction thereof measured based on JIS C 6481 at a temperature of 20° C. to a glass-transition temperature Tg | 04-14-2011 |
| Patent application number | Description | Published |
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| 20090243065 | Semiconductor Device and Method for Manufacturing Semiconductor Device - A semiconductor device ( | 10-01-2009 |
| 20090321919 | SEMICONDUCTOR DEVICE - The semiconductor device | 12-31-2009 |
| 20100181686 | Semiconductor Device - A semiconductor device | 07-22-2010 |
| 20100186938 | HEAT TRANSFER SHEET AND HEAT DISSIPATION STRUCTURE - A heat transfer sheet of the present invention includes a heat transfer layer having a first portion and a second portion provided in a position different from the first portion in a planar view of the heat transfer layer, the second portion being capable of expanding and contracting in a thickness direction of the heat transfer layer at an expansion ratio larger than that of the first portion depending on temperature changes in an object from which heat is to be dissipated. In a state that the heat transfer sheet is used, in the case where a temperature of the heat transfer layer is a predetermined temperature or lower, thermal conductivity between the object and a dissipation member is lowered due to creation of a gap between the second portion and the object and/or the dissipation member, whereas in the case where the temperature of the heat transfer layer is a predetermined temperature or higher, the thermal conductivity between the object and the dissipation member is increased due to substantial elimination of the gap. | 07-29-2010 |
| 20100258713 | LIGHT RECEIVING DEVICE AND METHOD OF MANUFACTURING LIGHT RECEIVING DEVICE - A light receiving device | 10-14-2010 |
| 20110037174 | METHOD OF MANUFACTURING SEMICONDUCTOR COMPONENT, AND SEMICONDUCTOR COMPONENT - A method of manufacturing a semiconductor component of the present invention has: obtaining a semiconductor wafer having stud electrodes formed on a functional surface thereof, and a circuit board having solder bumps on one surface and having electrode pads on the other surface thereof; bonding the semiconductor wafer and the circuit board, while providing a resin layer having a flux activity between the semiconductor wafer and the circuit board, and so as to bring the stud electrodes into contact with the solder bumps, while penetrating the resin layer having a flux activity, to thereby obtain a bonded structure; applying a solder material onto the electrode pads of the bonded structure; and dicing the bonded structure to obtain a plurality of semiconductor components. | 02-17-2011 |
