| Patent application number | Description | Published |
|---|
| 20080282976 | Film formation apparatus and method for using the same - A method for using a film formation apparatus for a semiconductor process includes setting an idling state where a reaction chamber of the film formation apparatus accommodates no product target substrate therein, and then, performing a purging process of removing a contaminant present in an inner surface of the reaction chamber by causing radicals to act on the inner surface of the reaction chamber. The radicals are generated by activating a purging process gas containing oxygen and hydrogen as elements. | 11-20-2008 |
| 20090029562 | Film formation method and apparatus for semiconductor process - A film formation method for a semiconductor process includes placing a plurality of target objects at intervals in a vertical direction inside a process container of a film formation apparatus. Then, the method includes setting the process container to have a first vacuum state therein, and supplying a first film formation gas containing a hydrocarbon gas into the process container, thereby forming a carbon film by CVD on the target objects. Then, the method includes setting the process container to have a second vacuum state therein, while maintaining the process container to have a vacuum state therein from the first vacuum state, and supplying a second film formation gas containing an organic silicon source gas into the process container, thereby forming an Si-containing inorganic film by CVD on the carbon film. | 01-29-2009 |
| 20090124077 | Method for forming poly-silicon film - A poly-silicon film formation method for forming a poly-silicon film doped with phosphorous or boron includes heating a target substrate placed in a vacuum atmosphere inside a reaction container, and supplying into the reaction container a silicon film formation gas, a doping gas for doping a film with phosphorous or boron, and a grain size adjusting gas containing a component to retard columnar crystal formation from a poly-silicon crystal and to promote miniaturization of the poly-silicon crystal, thereby depositing a silicon film doped with phosphorous or boron on the target substrate. | 05-14-2009 |
| 20090233454 | FILM FORMATION APPARATUS FOR SEMICONDUCTOR PROCESS AND METHOD FOR USING SAME - A method for using a film formation apparatus includes, in order to inhibit metal contamination: performing a cleaning process using a cleaning gas on an inner wall of a process container and a surface of a holder with no productive target objects held thereon; and then, performing a coating process of forming a silicon nitride film by alternately supplying a silicon source gas and a nitriding gas to cover with the silicon nitride film the inner wall of the process container and the surface of the holder with no productive target objects held thereon. | 09-17-2009 |
| 20100210094 | METHOD FOR USING APPARATUS CONFIGURED TO FORM GERMANIUM-CONTAINING FILM - A method for using an apparatus configured to form a germanium-containing film includes performing a first film formation process for forming a first product film containing germanium by CVD on a product target object placed inside a reaction container, a first cleaning process for etching the film formation by-product, a second cleaning process for removing residual germanium from inside the reaction container, and a second film formation process for forming a second product film containing no germanium by CVD on a product target object placed inside the reaction container, in this order. The second cleaning process is performed by exhausting gas from inside the reaction container with no product target object placed therein, supplying a second cleaning gas containing an oxidizing gas and hydrogen gas into the reaction container, and heating an interior of the reaction container thereby activating the second cleaning gas. | 08-19-2010 |
| 20100311251 | BATCH PROCESSING METHOD FOR FORMING STRUCTURE INCLUDING AMORPHOUS CARBON FILM - A batch processing method for forming a structure including an amorphous carbon film includes performing a preliminary treatment of removing water from a surface of the underlying layer by heating the inside of the reaction chamber at a preliminary treatment temperature of 800 to 950° C. and supplying a preliminary treatment gas selected from the group consisting of nitrogen gas and ammonia gas into the reaction chamber while exhausting gas from inside the reaction chamber; and, then performing main CVD of forming an amorphous carbon film on the underlying layer by heating the inside of the reaction chamber at a main process temperature and supplying a hydrocarbon gas into the reaction chamber while exhausting gas from inside the reaction chamber. | 12-09-2010 |
| 20110195580 | METHOD FOR FORMING LAMINATED STRUCTURE INCLUDING AMORPHOUS CARBON FILM - A method for forming a laminated structure including an amorphous carbon film on an underlying layer includes forming an initial layer containing Si—C bonds on a surface of the underlying layer, by supplying an organic silicon gas onto the underlying layer; and forming the amorphous carbon film by thermal film formation on the underlying layer with the initial layer formed on the surface thereof, by supplying a film formation gas containing a hydrocarbon compound gas onto the underlying layer. | 08-11-2011 |
| 20110309562 | SUPPORT STRUCTURE AND PROCESSING APPARATUS - A support structure for supporting a plurality of objects to be processed and to be disposed in a processing container structure in which a processing gas flows from the bottom to the top or from the top to the bottom, includes: a top plate portion; a bottom portion; and a plurality of support posts connecting the top plate portion and the bottom portion. A plurality of support portions for supporting the objects to be processed are formed in each support post along the longitudinal direction, and the pitch of the support portions is set larger on the downstream side than on the upstream side in the flow direction of the processing gas. The support structure can enhance the in-plane uniformity of the thickness of a film formed on a processing object. | 12-22-2011 |
