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Mitsuhiko Sakai
Mitsuhiko Sakai, Kyoto JP
| Patent application number | Description | Published |
|---|---|---|
| 20090001402 | Semiconductor element and method of making the same - A semiconductor light-emitting element includes a nitride semiconductor layer with an active layer. The nitride semiconductor layer has a main surface formed with a first bonding layer made of gold or an alloy of gold and tin. The first bonding layer is bonded to a second bonding layer made of gold or an alloy of gold and tin. The second bonding layer is bonded to a support layer which has a thermal conductivity not smaller than 100 W/mK. The first bonding layer and the second bonding layer have a total thickness not smaller than 5 μm. | 01-01-2009 |
| 20090026468 | Semiconductor Light Emitting Element - In a semiconductor light emitting element, a p-type layer ( | 01-29-2009 |
| 20090166663 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride semiconductor light-emitting device includes, a support substrate | 07-02-2009 |
| 20090278145 | Semiconductor Light Emitting Device and Method for Manufacturing the Same - To provide a semiconductor light emitting device with a light extraction efficiency increased and a method for manufacturing the semiconductor light emitting device. | 11-12-2009 |
| 20100019257 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - There are provided a nitride semiconductor light emitting device having a structure enabling enhanced external quantum efficiency by effectively taking out light which is apt to repeat total reflection within a semiconductor lamination portion and a substrate and attenuate, and a method for manufacturing the same. A semiconductor lamination portion ( | 01-28-2010 |
| 20100133505 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD FOR THE SAME - A high luminance semiconductor light emitting device and a fabrication method for such semiconductor light emitting device are provided by forming a metallic reflecting layer using a non-transparent semiconductor substrate. | 06-03-2010 |
Mitsuhiko Sakai, Kyoto-Fu JP
| Patent application number | Description | Published |
|---|---|---|
| 20100133507 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD FOR THE SAME - A high luminance semiconductor light emitting device and a fabrication method for the same are provided by forming a metallic reflecting layer using a non-transparent semiconductor substrate. | 06-03-2010 |
Mitsuhiko Sakai, Kyoto-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080258166 | Semiconductor Light Emitting Device and Method for Manufacturing the Same - There is provided a semiconductor light emitting semiconductor device including an n-side electrode which has a structure capable of stably suppressing the contact resistance between the n-side electrode and a nitride semiconductor layer. Further, there is provided a light emitting device and a manufacturing method wherein an ohmic contact between the n-side electrode and the nitride semiconductor layer can be obtained by a simple manufacturing process, and the n-side electrode has an Au layer on a top surface to facilitate wire bonding. Semiconductor layers ( | 10-23-2008 |
| 20090206357 | Semiconductor Light Emitting Device - There is provided a nitride semiconductor light emitting device in which a semiconductor layer is not broken easily even when a reverse voltage is applied or even in long time operation, and excellent reliability is obtained, by preventing semiconductor layers from deterioration when manufacturing a device. On a surface of a substrate ( | 08-20-2009 |
| 20090278144 | Nitride Semiconductor Light Emitting Device - There is provided a nitride semiconductor light emitting device having a light reflection layer capable of preventing reflectivity from lowering and luminance from lowering due to deterioration of quality of an active layer. A nitride semiconductor laser includes at least a light emitting layer forming portion ( | 11-12-2009 |