Patent application number | Description | Published |
20130095416 | PHOTOMASK AND PATTERN FORMATION METHOD - A photomask includes: a transparent substrate; and first and second mask patterns located on the transparent substrate and at least partially facing each other with a space sandwiched therebetween. The first mask pattern includes a semi-light-shielding part which transmits part of light therethrough and a light-shielding part. In the first mask pattern, the semi-light-shielding part at least partially faces the space with the light-shielding part sandwiched therebetween. In a direction along which the first mask pattern and the second mask pattern face each other, the first mask pattern has a size greater than (0.7×λ/NA)×M, and the space has a size less than or equal to (0.5×λ/NA)×M where λ is a wavelength of exposure light, NA is a numerical aperture of a reduced projection optical system of an exposure device, and M is a magnification of the reduced projection optical system. | 04-18-2013 |
20130140707 | SEMICONDUCTOR DEVICE AND LAYOUT DESIGN METHOD FOR THE SAME - A semiconductor device includes: a plurality of line features including at least one real feature which includes a gate electrode portion, and at least one dummy feature. Two of multiple ones of the dummy feature, and at least one of the line features interposed between the two dummy features and including the at least one real feature form parallel running line features which are evenly spaced. The parallel running line features have an identical width, and line end portions of the parallel running line features are substantially flush. Line end portion uniformization dummy features are formed on extensions of the line end portions of the parallel running line features. The line end portion uniformization dummy features include a plurality of linear features each having a same width as each of the line features and spaced at intervals equal to an interval between each adjacent pair of the line features. | 06-06-2013 |
20130260293 | PHOTOMASK, AND PATTERN FORMATION METHOD AND EXPOSURE APPARATUS USING THE PHOTOMASK - A photomask includes a translucent substrate; and a light-shielding film formed on the translucent substrate, and including a light-shielding portion and an opening which serves as a translucent region. A plurality of recesses are formed in a region of the translucent substrate, which is exposed from the opening. Widths of the plurality of recesses gradually increase with an increase in distances from a focal point so that light transmitted by the plurality of recesses is focused in a predetermined position. | 10-03-2013 |
20140308604 | PHOTO MASK AND METHOD FOR FORMING PATTERN USING THE SAME - An opening width of a main pattern is a width with which a transcription pattern is formed on a target member to be exposed by transmitted exposure light, and is a dimension of 0.8×(λ/NA)×M or less (where λ is a wavelength of the exposure light, and NA and M are a numerical aperture and a reduction ratio of a reduced projection optical system of an exposure apparatus). Each of a first auxiliary pattern adjacent to the main pattern and a second auxiliary pattern located outside the first auxiliary pattern to be adjacent thereto has a width with which a transcription pattern is not formed by the exposure light and generates diffracted light. A first distance between respective centers of the main pattern and the first auxiliary pattern is greater than a second distance between respective centers of the first auxiliary pattern and the second auxiliary pattern. | 10-16-2014 |
20150316841 | PHOTOMASK AND PATTERN FORMING METHOD USING PHOTOMASK - A photomask includes a transparent substrate, and a light shield provided to the transparent substrate. The light shield includes a translucent mask pattern opening, and the mask pattern opening includes a plurality of translucent regions which are provided to a periphery of a region corresponding to a desired pattern, and allow exposure light beams to be transmitted at at least three different phases. Each of the plurality of translucent region spaced apart from the region corresponding to the desired pattern, advances more toward an exposure object spaced a predetermined distance apart compared to a phase plane of an exposure light beam transmitted through a translucent region of the plurality of translucent regions, the translucent region close to the region corresponding to the desired pattern, such that the exposure light beams that are transmitted through the mask pattern opening form a projection image of the desired pattern on the exposure object. | 11-05-2015 |
20150346597 | PHOTOMASK, AND METHOD FOR CREATING PATTERN DATA THEREOF, AND PATTERN FORMING METHOD AND PROCESSING METHOD USING PHOTOMASK - A photomask includes: a light blocking member provided on a translucent substrate; a main pattern portion provided in a first region corresponding to a desired pattern, being an opening of the light blocking member; and an auxiliary pattern portion provided in a second region surrounding the position corresponding to the desired pattern and along a side constituting an outline portion of the desired pattern, including a plurality of in-phase auxiliary patterns each of which is an opening transmitting in-phase light with light transmitted through the main pattern portion. The in-phase auxiliary pattern is provided at a distance of √(2×n×G×λ) from the side constituting the outline portion of the desired pattern (where G is a gap length between the photomask and the exposed body, λ is a wavelength of the exposure light, and n is a natural number). The exposure light transmitted through the auxiliary pattern portion is projected on an exposed body to form a projection image having light intensity emphasized at the side constituting the outline portion of the desired pattern. | 12-03-2015 |
Patent application number | Description | Published |
20080286661 | Photomask, Photomask Fabrication Method, Pattern Formation Method Using the Photomask and Mask Data Creation Method - A mask pattern including a light-shielding portion | 11-20-2008 |
20090019419 | Method for forming LSI pattern - First, multiple circuit patterns, which will eventually make an LSI, are designed on a cell-by-cell basis, and an initial placement is made for the circuit patterns designed. Next, optical proximity corrections are performed on at least two of the circuit patterns that have been initially placed to be adjacent to or cross each other, thereby forming optical proximity corrected patterns out of the adjacent or crossing circuit patterns. Then, it is determined whether or not optical proximity corrections can be performed effectively using the corrected patterns. If the effectiveness of the corrections is negated, a design rule defining the circuit patterns is changed to make the corrections effective. Thereafter, the initially placed circuit patterns are placed again in accordance with the design rule changed. | 01-15-2009 |
20090061328 | PHOTOMASK AND PATTERN FORMATION METHOD USING THE SAME - A photomask includes a transparent substrate having a transparent property against exposing light and a halftone portion formed on the transparent substrate. In the halftone portion, a first opening having a first dimension and a second opening having a second dimension larger than the first dimension are formed. A light-shielding portion is formed on the transparent substrate to be disposed around the second opening. | 03-05-2009 |
20090061330 | PHOTOMASK AND PATTERN FORMATION METHOD USING THE SAME - A photomask includes a transparent substrate having a transparent property against exposing light, a semi-light-shielding portion formed on the transparent substrate, a first opening formed in the semi-light-shielding portion and having a first dimension and a second opening formed in the semi-light-shielding portion and having a second dimension lager than the first dimension. A phase-shifting portion which transmits the exposing light in an opposite phase with respect to the first opening is formed on the transparent substrate around the first opening. A light-shielding portion is formed on the transparent substrate around the second opening. | 03-05-2009 |
20090075182 | PHOTOMASK AND PATTERN FORMATION METHOD USING THE SAME - A photomask includes: a transparent substrate having a transparent property against exposing light; a first light-shielding pattern formed on the transparent substrate and having a first dimension; a second light-shielding pattern formed on the transparent substrate and having a second dimension larger than the first dimension; and an opening provided in part of the transparent substrate where the first light-shielding pattern and the second light-shielding pattern are not formed. The first light-shielding pattern includes a first semi-light-shielding portion and an auxiliary pattern which is arranged within the first semi-light-shielding portion and allows the exposing light to pass through in an opposite phase with respect to the first semi-light-shielding portion. The second light-shielding pattern includes a second semi-light-shielding portion and a light-shielding portion which does not substantially allow the exposing light to pass through. | 03-19-2009 |
20090208851 | Photomask, Fabrication Method for the Same and Pattern Formation Method Using the Same - A mask pattern including, for example, a light-shielding portion | 08-20-2009 |
20110136048 | PHOTOMASK AND PATTERN FORMATION METHOD USING THE SAME - A photomask includes: a transparent substrate having a transparent property against exposing light; a first light-shielding pattern formed on the transparent substrate and having a first dimension; a second light-shielding pattern formed on the transparent substrate and having a second dimension larger than the first dimension; and an opening provided in part of the transparent substrate where the first light-shielding pattern and the second light-shielding pattern are not formed. The first light-shielding pattern includes a first semi-light-shielding portion and an auxiliary pattern which is arranged within the first semi-light-shielding portion and allows the exposing light to pass through in an opposite phase with respect to the first semi-light-shielding portion. The second light-shielding pattern includes a second semi-light-shielding portion and a light-shielding portion which does not substantially allow the exposing light to pass through. | 06-09-2011 |
20110262849 | PHOTOMASK AND PATTERN FORMATION METHOD USING THE SAME - A photomask includes a transparent substrate having a transparent property against exposing light, a semi-light-shielding portion formed on the transparent substrate, a first opening formed in the semi-light-shielding portion and having a first dimension and a second opening formed in the semi-light-shielding portion and having a second dimension lager than the first dimension. A phase-shifting portion which transmits the exposing light in an opposite phase with respect to the first opening is formed on the transparent substrate around the first opening. A light-shielding portion is formed on the transparent substrate around the second opening. | 10-27-2011 |
20110272815 | SEMICONDUCTOR DEVICE AND LAYOUT DESIGN METHOD FOR THE SAME - A semiconductor device includes: a plurality of line features including at least one real feature which includes a gate electrode portion, and at least one dummy feature. Two of multiple ones of the dummy feature, and at least one of the line features interposed between the two dummy features and including the at least one real feature form parallel running line features which are evenly spaced. The parallel running line features have an identical width, and line end portions of the parallel running line features are substantially flush. Line end portion uniformization dummy features are formed on extensions of the line end portions of the parallel running line features. The line end portion uniformization dummy features include a plurality of linear features each having a same width as each of the line features and spaced at intervals equal to an interval between each adjacent pair of the line features. | 11-10-2011 |
20110278679 | SEMICONDUCTOR DEVICE, MASK FOR FABRICATION OF SEMICONDUCTOR DEVICE, AND OPTICAL PROXIMITY CORRECTION METHOD - A semiconductor device includes a circuit portion including at least one real feature, and a plurality of dummy feature groups each including a plurality of dummy features spaced apart from each other by a first distance. The plurality of dummy feature groups are spaced apart from each other by a second distance larger than the first distance, and the circuit portion and the plurality of dummy feature groups are spaced apart from each other by the second distance. | 11-17-2011 |
Patent application number | Description | Published |
20100302651 | ZOOM LENS - A zoom lens including, in a sequence from an object side, a first lens group having a positive refractive power, a second lens group having a negative refractive power, and a succeeding lens group having an overall positive refractive power, and having a high zoom magnification and a compact size. | 12-02-2010 |
20110149118 | Zoom Lens and Photographing Apparatus - A zoom lens and a photographing apparatus including the same. The zoom lens includes a first lens group having a positive refractive power, a second lens group having a negative refractive power, and an additional lens grouping having a positive refractive power, which are sequentially arranged from an object side, wherein the additional lens grouping comprises a third lens group having a positive refractive power. | 06-23-2011 |
20130169856 | ZOOM LENS AND PHOTOGRAPHING APPARATUS - A zoom lens and a photographing apparatus including the same. The zoom lens includes a first lens group having a positive refractive power, a second lens group having a negative refractive power, and an additional lens grouping having a positive refractive power, which are sequentially arranged from an object side, wherein the additional lens grouping comprises a third lens group having a positive refractive power. | 07-04-2013 |
20140160342 | ZOOM LENS - A zoom lens includes, sequentially from an object side, a positive first lens group, a negative second lens group, a positive third lens group, and a positive rear lens group. During zooming from a wide angle position to a telephoto position, an interval between the first lens group and the second lens group increases, and an interval between the second lens group and the third lens group decreases. The rear lens group includes a positive first sub-group, a negative second sub-group, and a positive third sub-group, and focusing is performed by moving the second sub-group toward an image surface side. The zoom lens satisfies the following conditions: 0.206-12-2014 | |
20140160347 | ZOOM LENS HAVING VIBRATION PREVENTION FUNCTION - A zoom lens includes, sequentially from an object side, a first lens group having a positive refractive power, a second lens group having a negative refractive power, and a third lens group having a positive refractive power. When zoom is changed from a wide angle end to a telephoto end, an interval between the first lens group and the second lens group increases, and an interval between the second lens group and third lens group decreases. The second lens group comprises, sequentially from the object side, a second A lens group having a negative refractive power and a second B lens group having a negative refractive power, and the second B group is displaced in a direction perpendicular to an optical axis to perform a vibration prevention function. | 06-12-2014 |
Patent application number | Description | Published |
20090024985 | TASK CONTROL METHOD AND SEMICONDUCTOR INTEGRATED CIRCUIT - A task control method by which when a multiprocessor device having processors executes application software tasks, checkpoints have been buried in the application software tasks in advance. In course of execution of each application software task, the checkpoints are used to make an inquiry about passed one of the checkpoints in the task. Then, the progress of each task is judged based on the current passed checkpoint identified as a result of the inquiry and a passed budget corresponding to the passed checkpoint. Based on a result of the judgment, a resource shared by the tasks is controlled, and a new passed budget is set. Thus, the restriction on the scope of application of an application software program is reduced. | 01-22-2009 |
20090089786 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE FOR REAL-TIME PROCESSING - A technology capable of efficiently performing the processes by using limited resources in an LSI where a plurality of real-time applications are parallelly processed is provided. To provide such a technology, a mechanism is provided in which a plurality of processes to be executed on a plurality of processing units in an LSI are managed throughout the LSI in a unified manner. For each process to be managed, a priority is calculated based on the state of progress of the process, and the execution of the process is controlled according to the priority. A resource management unit IRM or program that collects information such as a process state from each of the processing units executing the processes and calculates a priority for each process is provided. Also, a programmable interconnect unit and storage means for controlling a process execution sequence according to the priority are provided. | 04-02-2009 |
20110029802 | INFORMATION PROCESSING SYSTEM - An information processing device having low power consumption without affecting interruption request response speed. The device specifies a waiting time until execution of a given event and makes a system call and includes a first timer circuit for a first cycle; a second timer circuit for a second cycle shorter than the first cycle; a timeout supervisor which stores the waiting time; and a first cycle supervisor which stores waiting time until the next interruption request. The timeout supervisor stores the time calculated by subtraction of the waiting time stored in the first cycle supervisor from that in the timeout supervisor upon an interruption request from the first timer; and if the waiting time stored in the timeout supervisor is shorter than the first cycle, the second cycle time is subtracted from the time stored in the timeout supervisor upon an interruption request from the second timer circuit. | 02-03-2011 |
Patent application number | Description | Published |
20120125919 | INDUCTION HARDENING APPARATUS, INDUCTION HARDENING METHOD, INDUCTION HEATING COIL, HEAT TREATMENT APPARATUS, AND HEAT TREATMENT METHOD - According to an embodiment, an induction heating coil includes a heating conductor portion which is formed of a conductor member and has a zigzag shape in which a bent portion opened to one side in a first direction and a bent portion opened to the other side in the first direction are alternately continuously arranged in opposite directions along a second direction crossing the first direction. | 05-24-2012 |
20140144904 | INDUCTION HEATING DEVICE, INDUCTION HEATING EQUIPMENT, INDUCTION HEATING METHOD, AND HEAT TREATMENT METHOD - An induction heating device and an induction heating method are provided. The entire areas to be heated of the workpiece, even a large workpiece, can be readily and approximately uniformly heated to a predetermined high temperature, and uniform heating is possible even when the workpiece deforms in a non-uniform manner during heating. When areas to be heated H | 05-29-2014 |
20160076117 | WELDING METHOD AND WELD STRUCTURE - Object of the present invention is to provide a welding method prevented the fracture at the spot welding zone by recovering the strength of a spot welding zone, namely, the ductility and the toughness in the spot welding zone, and a weld structure manufactured by the method. In the welding method, a spot welding zone provided with a weld nugget | 03-17-2016 |