| Patent application number | Description | Published |
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| 20090026465 | POLYSILICON FILM HAVING SMOOTH SURFACE AND METHOD OF FORMING THE SAME - A method of forming a polysilicon film having smooth surface using a lateral growth and a step-and-repeat laser process. Amorphous silicon formed in a first irradiation region of a substrate is crystallized to form a first polysilicon region by a first laser shot. Then, the substrate is moved a predetermined distance, and irradiated by a second laser shot. The polysilicon region is then recrystallized and locally planarized by subsequent laser shots. After multiple repetitions of the irradiation procedure, the amorphous silicon film formed on a substrate is completely transformed into a polysilicon film. The polysilicon film includes lateral growth crystal grains and nano-trenches formed in parallel on the surface of the polysilicon film. A longitudinal direction of the nano-trenches is substantially perpendicular to a lateral growth direction of the crystal grains. | 01-29-2009 |
| 20100009523 | MASK AND METHOD OF FABRICATING A POLYSILICON LAYER USING THE SAME - A mask includes a primary opaque pattern and a number of clusters of secondary opaque patterns. The primary opaque pattern defines a number of strip transparent slits whose extending directions are substantially the same. The clusters of the secondary opaque patterns are connected to the primary opaque pattern, and each of the clusters of the secondary opaque patterns is disposed in one of the transparent slits, respectively. Each of the clusters of the secondary opaque patterns includes a number of secondary opaque patterns, and extending directions of at least a portion of the secondary opaque patterns and the extending directions of the transparent slits together form included angles that are not equal to about 90°. | 01-14-2010 |
| 20100019243 | THIN FILM TRANSISTOR SUBSTRATE, ELECTRONIC APPARATUS, AND METHODS FOR FABRICATING THE SAME - A TFT substrate includes a substrate and at least a TFT disposed thereon. The TFT includes a semiconductor island and at least a gate. The semiconductor island has a source region, a drain region, and a channel region interposed therebetween. The semiconductor island has sub-grain boundaries. The gate corresponds to the channel region. A first included angle between an extending direction of the gate and a line connecting the centroid of the source region with the centroid of the drain region is not substantially equal to 90 degrees. A second included angle between the sub-grain boundaries in the channel region and the line connecting the centroid of the source region with the centroid of the drain region is not substantially equal to 0 degree or 90 degrees. Additionally, a method of fabricating a TFT substrate, an electronic apparatus, and a method of fabricating the electronic apparatus are also provided. | 01-28-2010 |
| 20100051950 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THEREOF - A thin film transistor array substrate includes a substrate, a plurality of poly-silicon islands and a plurality of gates. The substrate has a display region, a gate driver region and a source driver region. Each poly-silicon island disposed on the substrate has a source region, a drain region and a channel region disposed therebetween. The poly-silicon islands include several first poly-silicon islands and several second poly-silicon islands. The first poly-silicon islands having main grain boundaries and sub grain boundaries are only disposed within the display region and the gate driver region. The main grain boundaries of the first poly-silicon islands are only disposed within the source regions and/or the drain regions. The second poly-silicon islands are disposed in the source driver region. Grain sizes of the first poly-silicon islands are substantially different from those of the second poly-silicon islands. Gates corresponding to the channel regions are disposed on the substrate. | 03-04-2010 |
| 20100176402 | THIN FILM TRANSISTOR SUBSTRATE, ELECTRONIC APPARATUS, AND METHODS FOR FABRICATING THE SAME - A TFT substrate includes a substrate and at least a TFT disposed thereon. The TFT includes a semiconductor island and at least a gate. The semiconductor island has a source region, a drain region, and a channel region interposed therebetween. The semiconductor island has sub-grain boundaries. The gate corresponds to the channel region. A first included angle between an extending direction of the gate and a line connecting the centroid of the source region with the centroid of the drain region is not substantially equal to 90 degrees. A second included angle between the sub-grain boundaries in the channel region and the line connecting the centroid of the source region with the centroid of the drain region is not substantially equal to 0 degree or 90 degrees. Additionally, a method of fabricating a TFT substrate, an electronic apparatus, and a method of fabricating the electronic apparatus are also provided. | 07-15-2010 |
| 20100230763 | ACTIVE DEVICE ARRAY SUBSTRATE AND METHOD FOR FABRICATING THE SAME - A method for fabricating an active device array substrate is provided. A first patterned semiconductor layer, a gate insulator, a first patterned conductive layer and a first dielectric layer is sequentially formed on a substrate. First contact holes exposing the first patterned semiconductor layer are formed in the first dielectric layer and the gate insulator. A second patterned conductive layer and a second patterned semiconductor layer disposed thereon are simultaneously formed on the first dielectric layer. The second conductive layer includes contact conductors and a bottom electrode. The second patterned semiconductor layer includes an active layer. A second dielectric layer having second contact holes is formed on the first dielectric layer, wherein a portion of the second contact holes exposes the active layer. A third patterned conductive layer electrically connected to the active layer through a portion of the second contact holes is formed on the second dielectric layer. | 09-16-2010 |
