Patent application number | Description | Published |
20110309357 | MEASURING APPARATUS - A measuring apparatus including a first chip, a first circuit layer, a first heater, a first stress sensor and a second circuit layer is provided. The first chip has a first through silicon via, a first surface and a second surface opposite to the first surface. The first circuit layer is disposed on the first surface. The first heater and the first stress sensor are disposed on the first surface and connected to the first circuit layer. The second circuit layer is disposed on the second surface. | 12-22-2011 |
20120038041 | HEAT DISSIPATION STRUCTURE FOR ELECTRONIC DEVICE AND FABRICATION METHOD THEREOF - A heat dissipation structure for an electronic device includes a body having a first surface and a second surface opposite to the first surface. A silicon-containing insulating layer is disposed on the first surface of the body. An ultrananocrystalline diamond film is disposed on the silicon-containing insulating layer. A first conductive pattern layer is disposed on the silicon-containing insulating layer and enclosed by the ultrananocrystalline diamond film, wherein the ultrananocrystalline diamond film and the first conductive pattern layer do not overlap with each other as viewed from a top-view perspective. A method for fabricating a heat dissipation structure for an electronic device and an electronic package having the heat dissipation structure are also disclosed. | 02-16-2012 |
20120068177 | MEASURING APPARATUS - A measuring apparatus including a first chip, a first circuit layer, a first heater, a first stress sensor and a second circuit layer is provided. The first chip has a first through silicon via, a first surface and a second surface opposite to the first surface. The first circuit layer is disposed on the first surface. The first heater and the first stress sensor are disposed on the first surface and connected to the first circuit layer. The second circuit layer is disposed on the second surface. The first heater comprises a plurality of first switches connected in series to generate heat. | 03-22-2012 |
20120092834 | HEAT DISSIPATION STRUCTURE FOR ELECTRONIC DEVICE AND FABRICATION METHOD THEREOF - A heat dissipation structure for an electronic device includes a body having a first surface and a second surface opposite to the first surface. A silicon-containing insulating layer is disposed on the first surface of the body. A chemical vapor deposition (CVD) diamond film is disposed on the silicon-containing insulating layer. A first conductive pattern layer is disposed on the silicon-containing insulating layer, wherein the first conductive pattern layer is enclosed by and spaced apart from the CVD diamond film. A method for fabricating a heat dissipation structure for an electronic device and an electronic package having the heat dissipation structure are also disclosed. | 04-19-2012 |
20120118346 | Thermoelectric Apparatus and Method of Fabricating the Same - A thermoelectric apparatus includes a first and a second assemblies, at least a first and a second heat conductors. The first assembly includes a first and a second substrates, and several first thermoelectric material sets disposed between the first and second substrates. The first substrate has at least a first through hole. The second assembly includes a third and a fourth substrates, and several second thermoelectric material sets disposed between the third and fourth substrates. The fourth substrate has at least a second through hole. Each of the first and second thermoelectric material sets has a p-type and an n-type thermoelectric element. The first and second heat conductors respectively penetrate the first and second through holes. Two ends of the first heat conductor respectively connect the second and fourth substrates, while two ends of the second heat conductor respectively connect the first and third substrates. | 05-17-2012 |
20120153454 | SEMICONDUCTOR DEVICE - A semiconductor device including a silicon substrate, a plurality of silicon nanowire clusters, a first circuit layer and a second circuit layer. The silicon substrate has a first surface, a second surface opposite to the first surface and a plurality of through holes. The silicon nanowire clusters are disposed in the through holes of the silicon substrate, respectively. The first circuit layer is disposed on the first surface and connected to the silicon nanowire clusters. The second circuit layer is disposed on the second surface and connected to the silicon nanowire clusters. | 06-21-2012 |
20120249176 | TEST STRUCTURE AND MEASUREMENT METHOD THEREOF - A test structure including a substrate, at least one conductive plug, a first conductive trace and a second conductive trace is provided. The substrate has a first area and a second area. The at lest one conductive plug is disposed in the substrate in the first area, wherein the conductive plug does not penetrate through the substrate. | 10-04-2012 |
20120273939 | FILLED THROUGH-SILICON VIA AND THE FABRICATION METHOD THEREOF - By adding particles of high thermal conductivity and low thermal expansion coefficient into the copper as a composite material and filling with the composite material into the through-via hole, the mismatch of the coefficient of thermal expansion and the stress of the through-silicon via are lowered and the thermal conductivity of the through-silicon via is increased. | 11-01-2012 |
20120280385 | ELECTRONIC DEVICE PACKAGING STRUCTURE - An electronic device packaging structure is provided. The semiconductor device includes a semiconductor base, an emitter, a collector, and a gate. The emitter and the gate are disposed on a first surface of the semiconductor base. The collector is disposed on a second surface of the semiconductor base. A first passivation layer is located on the first surface of the semiconductor base surrounding the gate. A first conductive pad is disposed on the first passivation layer. A second conductive pad is disposed on the collector on the second surface. At least one conductive through via structure penetrates the first passivation layer, the first and second surfaces of the semiconductor base, and the collector to electrically connect the first and second conductive pads. | 11-08-2012 |
20130234325 | FILLED THROUGH-SILICON VIA AND THE FABRICATION METHOD THEREOF - By adding particles of high thermal conductivity and low thermal expansion coefficient into the copper as a composite material and filling with the composite material into the through-via hole, the mismatch of the coefficient of thermal expansion and the stress of the through-silicon via are lowered and the thermal conductivity of the through-silicon via is increased. | 09-12-2013 |
20130276464 | MEASUREMENT METHOD, MEASUREMENT APPARATUS, AND COMPUTER PROGRAM PRODUCT - A measurement method, a measurement apparatus, and a computer program product for measuring a thermoelectric module are provided. A temperature is provided to the thermoelectric module. A current is applied to the thermoelectric module to turn both sides of the thermoelectric module into a hot side and a cold side. The temperature of the hot side is higher than that of the cold side. A terminal voltage of the thermoelectric module, a hot side temperature of the hot side, and a cold side temperature of the cold side are measured at different time points. A thermoelectric relationship between the terminal voltages and differences between the hot side temperatures and the corresponding cold side temperatures is obtained according to the terminal voltages, the hot side temperatures, and the cold side temperatures. At least one first parameter of the thermoelectric module is estimated according to the thermoelectric relationship. | 10-24-2013 |
20130302935 | SELF-ASSEMBLY APPARATUS, DEVICE SELF-ASSEMBLING METHOD, AND METHOD OF ASSEMBLING THERMOELECTRIC DEVICES - A self-assembly apparatus for assembling a plurality of devices with a predetermined aspect ratio is provided. The self-assembly apparatus includes a guiding element, a vibration device, and a magnetic field inducing device. The guiding element has a mesh structure. The vibration device is coupled to the guiding element and configured to vibrate the guiding element. The magnetic field inducing device is disposed below the guiding element and configured to generate a time-varying magnetic field to rotate each of the devices. Through a collective effect of the vibration of the guiding element, the time-varying magnetic field, and the self-gravity of each of the devices, the devices are positioned on a plate between the guiding element and the magnetic field inducing device through the mesh structure. | 11-14-2013 |
20140291790 | ENCAPSULATION OF BACKSIDE ILLUMINATION PHOTOSENSITIVE DEVICE - An encapsulation of backside illumination photosensitive device including a circuit sub-mount, a backside illumination photosensitive device, a plurality of conductive terminals, and a heat dissipation structure is provided. The backside illumination photosensitive device includes an interconnection layer and a photosensitive device array, wherein the interconnection layer is located on the circuit sub-mount, and between the photosensitive device array and the circuit sub-mount. The conductive terminals are located between the interconnection layer and the circuit sub-mount to electrically connect the interconnection layer and the circuit sub-mount. The heat dissipation structure is located under the interconnection layer, and the heat dissipation structure and the photosensitive device array are respectively located at two opposite sides of the interconnection layer. | 10-02-2014 |