Inventors list |
Assignees list |
Classification tree browser |
Top 100 Inventors |
Top 100 Assignees |
Mine, Tokyo
Junko Mine, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20100032315 | Electrolytic processing apparatus and electrolytic processing method - An electrolytic processing apparatus, prior to carrying out plating directly on, e.g., a ruthenium film of a substrate using the ruthenium film as a seed layer, can securely remove a passive layer formed on a surface of the ruthenium film even when the substrate is a large-sized high-resistance substrate, such as a 300-mm wafer, thereby reducing the terminal effect during the subsequent plating, improving the quality of a plated film and enabling filling of a void-free plated film into a fine interconnect pattern. The electrolytic processing apparatus includes: an anode disposed opposite a seed layer of a noble metal or a high-melting metal, formed on a substrate; a porous body impregnated with an electrolytic solution, disposed in a space, filled with the electrolytic solution, between the substrate and the anode; and a control section for controlling an electric field on a surface of the seed layer so that a reduction reaction takes place in the seed layer, thereby electrolytically and electrochemically removing a passive layer formed in the surface of the seed layer. | 02-11-2010 |
| 20100097607 | Film Thickness Measuring Method and Substrate Processing Apparatus - A film thickness measuring method can carry out measurement of a thickness of an oxide film more simply in a shorter time. The film thickness measuring method includes determining a thickness of an oxide film or thin film of a metal or alloy by solely using a phase difference Δ, measured by ellipsometry, based on a predetermined relationship between the phase difference Δ and the thickness of the oxide film or thin film of the metal or alloy. | 04-22-2010 |
Kenichi Mine, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20080288692 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MICROCOMPUTER - It is intended to improve the efficiency of request retransmission. A high-speed serial interface block is provided which enables split-transaction communication performed through the issuing of a response from a completer to a request issued by a requester. The high-speed serial interface block mentioned above is provided with a reception butter for retrieving received data and with a control unit for causing execution of a process which is performed in the case where there is no response from the completer mentioned above within a predetermined time when the reception buffer mentioned above has overflown. When the reception buffer mentioned above has overflown, a process of issuing a time out even within a prescribed time for time-out determination is allowed to improve the efficiency of request retransmission. | 11-20-2008 |
Koji Mine, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090196114 | Semiconductor storage device - A semiconductor storage device includes: a plurality of I/O terminals configured in a block, and including a representative I/O terminal and a non-representative I/O terminal; a plurality of memory cells each associated with the plurality of I/O terminals to store data; a data input portion to which data to be stored in the plurality of memory cells is input; and a data output portion which outputs data stored in the plurality of memory cells, the data input portion including a branch circuit which distributes the data input to the representative I/O terminal to all of the plurality of memory cells when the data to be stored in the plurality of memory cells is input while in test mode, and the data output portion including: a selection circuit which is connected to the representative I/O terminal, and which selects one of the data output from the plurality of memory cells and outputs the selected data from the representative I/O terminal when the data stored in the plurality of memory cells is output while in the test mode; and a dummy circuit which is provided between the non-representative I/O terminal and the memory cell associated with the non-representative I/O terminal. | 08-06-2009 |
| 20120026815 | Semiconductor device and method of testing the same - A semiconductor device may include, but is not limited to, first and second memory regions, and first to fifth control circuits. The first and second memory regions are mutually exclusive at the same time. The first control circuit performs a first access to the first memory region. The second control circuit performs a second access to the second memory region. The third control circuit controls activation and deactivation of the first and second control circuits based on a first logic received from a plurality of first external terminals. The fourth control circuit switches between the first and second accesses based on at least a second logic received from a second external terminal. The fifth control circuit controls validation and invalidation of the fourth control circuit. | 02-02-2012 |
Rikako Mine, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20100117919 | RFID READER/WRITER ANTENNA - There are provided a plurality of connection auxiliary means | 05-13-2010 |
Shingo Mine, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090236042 | SILENT DISCHARGE PLASMA APPARATUS - A silent discharge plasma apparatus includes a dielectric member, a pair of electrodes opposed to each other across the dielectric member and an alternating-current source applying an alternating-current voltage between the electrodes and causing a discharge. A gas is supplied to a discharge space, where discharge occurs, and a plasma is produced. At least one of the electrodes includes a conductive power feeding thin film on the dielectric member. When the dielectric member is destroyed and an arc discharge develops between the electrodes, the power feeding thin film is eliminated or oxidized, and the arc discharge is stopped. | 09-24-2009 |
Taiji Mine, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20110317923 | METHOD OF COMPILING IMAGE DATABASE, IMAGE DATABASE COMPILATION PROGRAM, IMAGE RETRIEVAL METHOD - A method for creating an image database comprising an extraction step of extracting reference feature vectors from a reference image which should be compared with a retrieval query image for object recognition, the reference feature vectors corresponding to local features at different positions of the reference image and representing the position and characteristics of each of the local features as a vector position, vector length, and a vector direction, a clustering step of creating a plurality of clusters consisting of different reference feature vectors in such a manner that each reference vector belongs to any of the plurality of clusters, a selection step of selecting the representative vector of the clusters from among the reference feature vectors of each of the clusters, and a step of associating the representative vector with the reference image and registering the representative vector associated therewith in the image database for the object recognition, wherein, in the clustering step, each of the clusters is created in such a manner that reference feature vectors at a near vector position belong to the same cluster, and in the selection step, reference feature vectors with long vector length are given priority to select the representative vector, and wherein the retrieval query image and the reference image are compared with each other by generating at least one query feature vector from the retrieval query image, and applying local search between the query feature vector and the representative vector, each of the steps being executed by computers. | 12-29-2011 |
Takashi Mine, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20100035670 | SLIDING STRUCTURE FOR HOUSING, SLIDING OPENING AND CLOSING HOUSING, AND MOBILE PHONE - This invention is a sliding structure for a housing in which a guide rail formed on a lower housing and a groove for a guide rail formed on an upper housing engage and slide. An elastic body expanding and contracting 4 in a longitudinal direction of the guide rail and two pressing members located on both ends of the elastic body and subjected to respective opposite pressing forces from the elastic body are provided in parallel with the guide rail in the groove for a guide rail. At least one notch is formed on the elastic-body-disposed side of each of the guide rail and the groove for a guide rail in such a position that they can be opposed to each other in a sliding action process, and the two pressing members can take such positions that they press respective different housings in opposite directions through the notches. | 02-11-2010 |
| 20100048259 | PORTABLE ELECTRONIC APPARATUS - A hinge mechanism | 02-25-2010 |
Teruyuki Mine, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090166726 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - There are provided a method of manufacturing a semiconductor device which is capable of narrowing only the width of a Fin channel while maintaining the widths of source and drain regions, and a semiconductor device. The method of manufacturing a semiconductor device is a method of manufacturing a Fin type transistor, including: forming STI region | 07-02-2009 |
| 20110081761 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A first recess is formed in a semiconductor substrate to define an active region on the semiconductor substrate. The active region includes a protruding portion of the semiconductor substrate surrounded by the first recess. The protruding portion has a sloped side surface. A first insulating film that fills the first recess is formed. A gate recess is formed in the active region to form a thin film portion that upwardly extends. The thin film portion is positioned between the gate recess and the first insulating film. The thin film portion is a part of the protruding portion. An upper part of the thin film portion is removed by wet-etching to adjust a height of the thin film portion. | 04-07-2011 |
Tomoko Mine, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20120064454 | PRODUCING METHOD OF TONER FOR DEVELOPING STATIC IMAGE - A method of producing a toner comprising toner particles containing a binder resin composed of a non-crystalline polyester resin having a crosslinking structure and a crystalline polyester resin is disclosed, the method comparing steps of; | 03-15-2012 |