Patent application number | Description | Published |
20080242359 | MOBILE TERMINAL - A mobile terminal including a first body having a first surface and a second surface and a second body having a first surface and a second surface. In addition, the first body includes a first display located at the first surface and configured to display at least one icon, the at least one icon being selectable by touching the first display where the icon is displayed, a second display located at the second surface and configured to display information, and a receiver located in the first body and configured to transmit sound through the first surface. The second body includes an input device located at the first surface thereof to input information and is rotatably connected to the first body such that the first body can be rotated from a first state to a second state. | 10-02-2008 |
20080261659 | MOBILE COMMUNICATION TERMINAL - A mobile communication terminal including a first body, a second body slidably connected to the first body and moveable between a first position and a second position, and a slide module connecting the first body to the second body. The slide module is configured to guide the second body along a curved path between the first position and the second position such that the second body moves in both a lateral and longitudinal direction with respect to the first body. | 10-23-2008 |
20080307607 | PORTABLE TERMINAL - A mobile terminal has an opening and closing mechanism in which when an appropriate force is applied to the upper body to achieve a sliding movement with respect to the lower body, the upper body can be moved in a planar direction along the lower body and then in a non-planar direction to implement an open configuration. | 12-18-2008 |
20100158508 | Camera Module - A camera module is provided with a lens part including a lens and a lens barrel, a holder coupled with the lens part and formed with a first conductive layer, and a printed circuit board electrically connected to the first conductive layer while supporting the holder. | 06-24-2010 |
20110073925 | SEMICONDUCTOR DEVICE WITH BURIED BIT LINES INTERCONNECTED TO ONE-SIDE-CONTACT AND FABRICATION METHOD THEREOF - A semiconductor device with reduced resistance of a buried bit line, and a method for fabricating the same. The method for fabricating a semiconductor device includes etching a semiconductor substrate to form a plurality of active regions which are separated from one another by trenches formed in between, forming a side contact on a sidewall of each active region, and forming metal bit lines, each filling a portion of a respective trench and connected to the side contact. | 03-31-2011 |
20110129974 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes forming a plurality of first trenches by etching a substrate, forming a plurality of buried bit lines in the first trenches, forming a plurality of second trenches to expose at least one sidewall of the buried bit lines by etching the substrate, and forming a plurality of one-sidewall contact plugs which fill the second trenches. | 06-02-2011 |
20110200724 | Preparation Method of Cooked Rice in Aseptic Packing System Using Embryo Bud-Containing Rice - A method is provided for preparing an instant embryo bud-retaining white rice product. The rice is polished like white rice using a low-speed, uniform pressure method to keep embryo buds and is rich in nutrients and has white rice's flavor. Its lipid oxidation is similar to that of white rice. The immersion time period of the embryo bud-retaining white rice is controlled so as not to generate sticky materials after the immersion, thus allowing effective sterilization of the rice. Therefore, the instant embryo bud-retaining white rice can be stored at room temperature for 6 months or longer. | 08-18-2011 |
20120170368 | NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - Provided are a nonvolatile memory device and a method for fabricating the same, which can secure the structural stability of a three-dimensional nonvolatile memory device. The nonvolatile memory device includes one or more columnar channel plugs, a plurality of word lines and a plurality of dielectric layers stacked alternately to surround the columnar channel plug, a memory layer disposed between the word line and the columnar channel plug, a plurality of word line connection portions, each of the word line connection portions connecting ends of word lines of a common layer from among the plurality of word lines, and a plurality of word line extension portions extending from the word line connection portions. | 07-05-2012 |
20120217619 | SEMICONDUCTOR DEVICE WITH TRIANGLE PRISM PILLAR AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a triangle prism pillar having a first, a second, and a third sidewall surface, a bit line contacted with the first sidewall surface of the pillar, and a word line adjacent to the second sidewall surface of the pillar over the bit line. | 08-30-2012 |
20120286764 | APPARATUS FOR DETECTING PARTIAL DISCHARGE FOR ELECTRIC POWER DEVICES - The present invention relates to an apparatus for detecting partial discharge for electric power devices, comprising: an insulator having a predetermined shape; a receiving unit arranged inside or outside the insulator to receive signals of a plurality of sub-bands; and a connection electrode which transmits signals of a receiving electrode to a coaxial cable in conjunction with the connected coaxial cable. | 11-15-2012 |
20130099304 | 3-DIMENSIONAL NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - The device includes plural control gates stacked on a substrate, plural first channels, configured to penetrate the control gates, and plural memory layer patterns, each located between the control gate and the first channel, configured to respectively surround the first channel, wherein the memory layer patterns are isolated from one another. | 04-25-2013 |
20130161726 | NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A non-volatile memory device includes a channel layer vertically extending from a substrate, a plurality of inter-layer dielectric layers and a plurality of gate electrodes that are alternately stacked along the channel layer, and an air gap interposed between the channel layer and each of the plurality of gate electrodes. The non-volatile memory device may improve erase operation characteristics by suppressing back tunneling of electrons by substituting a charge blocking layer interposed between a gate electrode and a charge storage layer with an air gap, and a method for fabricating the non-volatile memory device. | 06-27-2013 |
20130168752 | NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A nonvolatile memory device includes a substrate including a surface, a channel layer formed on the surface of the substrate, which protrudes perpendicularly from the surface, and a plurality of interlayer dielectric layers and a plurality of gate electrode layers alternately stacked along the channel layer, wherein the plurality of gate electrode layers protrude from the plurality of interlayer dielectric layers. | 07-04-2013 |
20130264629 | NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A nonvolatile memory device includes a substrate; a channel layer projecting from a surface of the substrate, in a direction perpendicular to the surface; a tunnel dielectric layer surrounding the channel layer; a plurality of interlayer dielectric layers and a plurality of control gate electrodes alternately formed along the channel layer; floating gate electrodes interposed between the tunnel dielectric layer and the plurality of control gate electrodes, the floating gate electrodes comprising a metal-semiconductor compound; and a charge blocking layer interposed between each of the plurality of control gate electrodes and each of the plurality of floating gate electrodes. | 10-10-2013 |
20140054671 | NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - This technology relates to a nonvolatile memory device and a method of fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode over a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each coupled with the pipe channel layer and extended in a direction substantially perpendicular to the substrate, a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers, and etch stop layers including metal silicide and formed over the pipe connection gate electrode. | 02-27-2014 |
20140054672 | NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - This technology relates to a nonvolatile memory device and a method of fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode configured to have a bottom buried in a groove formed in a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each coupled to the pipe channel layer and extended in a direction substantially perpendicular to the substrate, and a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers, wherein the pipe connection gate electrode includes a metal silicide layer formed within the groove. The electric resistance of the pipe connection gate electrode may be greatly reduced without an increase in a substantial height by forming the metal silicide layer buried in the substrate under the pipe connection gate electrode. | 02-27-2014 |
20140054673 | NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - This technology relates to a nonvolatile memory device and a method for fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode over a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each connected with the pipe channel layer and extended in a direction substantially perpendicular to the substrate, a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers, and metal silicide layers configured to be in contact with the pipe connection gate electrode. The electric resistance of the pipe connection gate electrode may be greatly reduced without deteriorating the characteristics of the memory layers by forming the metal silicide layers coming in contact with the pipe connection gate electrode. | 02-27-2014 |
20140054674 | NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - This technology relates to a nonvolatile memory device and a method for fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode configured to have a lower part buried in a groove formed in a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each coupled with the pipe channel layer and extended in a direction substantially perpendicular to the substrate; and a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers. In accordance with this technology, a lower part of the pipe connection gate electrode is buried in the substrate. Accordingly, electric resistance may be reduced because the pipe connection gate electrode may have an increased volume without a substantial increase of the height. | 02-27-2014 |
20150072491 | 3-DIMENSIONAL NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - The device includes plural control gates stacked on a substrate, plural first channels, configured to penetrate the control gates, and plural memory layer patterns, each located between the control gate and the first channel, configured to respectively surround the first channel, wherein the memory layer patterns are isolated from one another. | 03-12-2015 |
20150079748 | NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - This technology relates to a nonvolatile memory device and a method for fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode configured to have a lower part buried in a groove formed in a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each coupled with the pipe channel layer and extended in a direction substantially perpendicular to the substrate; and a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers. In accordance with this technology, a lower part of the pipe connection gate electrode is buried in the substrate. Accordingly, electric resistance may be reduced because the pipe connection gate electrode may have an increased volume without a substantial increase of the height. | 03-19-2015 |