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Min-Liang
Min-Liang Chen, Hsinchu City TW
| Patent application number | Description | Published |
|---|---|---|
| 20100038802 | STACKED SEMICONDUCTOR DEVICE AND METHOD - A method of stacking wafers includes: providing a first wafer including a first metal connection layer; forming a first passivation layer over the first metal connection layer; forming a first bondpad in the first passivation layer to form a first bondpad layer; providing a second wafer including second metal connection layer; forming a second passivation layer over the second metal connection layer; forming a second bondpad in the second passivation layer to form a second bondpad layer; forming at least one of a first conductive adhesive layer over the first bondpad layer and a second conductive adhesive layer over the second bondpad layer; and stacking the second wafer on the first wafer by bonding respective faces of the second bondpad layer with the first bondpad layer via the at least one of the first conductive adhesive layer and the second conductive adhesive layer. | 02-18-2010 |
Min-Liang Chen, Hsinchu TW
| Patent application number | Description | Published |
|---|---|---|
| 20090011561 | Method of fabricating high-voltage mos having doubled-diffused drain - A method of fabricating high-voltage MOS having double-diffused drain (DDD) is disclosed. The original photoresist used to define a gate is used to define double-diffused drains without increasing the complexity of the whole process. A dielectric layer and a conductive layer are sequentially formed on a substrate. A patterned photoresist is then formed on the conductive layer and then used to etch the conductive layer and the dielectric layer to form a gate and a gate dielectric layer, respectively. After stabilizing the photoresist layer, a first ion implantation is performed to form lightly doped region having deep junction. The photoresist is removed and two spacers are formed on the sidewalls of the gate. Next, a second ion implantation is performed to form heavily doped region in the substrate on outer side of the spacers. | 01-08-2009 |
| 20090011564 | Method of forming a gate oxide layer - A nitrogen implantation to a substrate on the edges of an active area is added before filling an insulating layer in a trench during a shallow trench isolation process to reduce the thickness of a gate oxide formed later on the edges of the active area. | 01-08-2009 |
Min-Liang Kuo, Taipei TW
| Patent application number | Description | Published |
|---|---|---|
| 20100331249 | Pharmaceutical composition for inhibiting peritoneal dissemination - A pharmaceutical composition for treating or preventing peritoneal dissemination is provided. The pharmaceutical composition includes an effective dose of connective tissue growth factor (CTGF) and an acceptable receptor thereof. | 12-30-2010 |
| 20110082143 | Bicyclic Heteroaryl Compounds - Bicyclic heteroaryl compounds of formula (I) shown below are disclosed. Each variable in formula (I) is defined in the specification. Also disclosed is treatment of cancer with these compounds. | 04-07-2011 |
Min-Liang Wang, Chia-Yi TW
| Patent application number | Description | Published |
|---|---|---|
| 20100008566 | 3D model reconstruction acquisition based on images of incremental or decremental liquid level - A 3D model reconstruction acquisition includes the steps of preparing a transparent container and at least one image capture device, wherein an object is placed in the transparent container and a liquid is received in the transparent container; keeping the liquid level rising or lowering to allow the liquid level to pass through a surface of the object and then keeping capturing a series of the images; computing a liquid-level equation for each of the images by using curves of the images between the object and the incremental or decremental liquid level confined by the transparent container; computing 3D coordinates of the curves in accordance with the liquid-level equation of each image; and collecting 3D coordinates of all of the curves to create a 3D model of the object. In addition, the acquisition can be done in the environment having water and thus be applied to various environments. | 01-14-2010 |