Patent application number | Description | Published |
20120205757 | Pinning field in MR devices despite higher annealing temperature - The pinning field in an MR device was significantly improved by using the Ru 4A peak together with steps to minimize interfacial roughness of the ruthenium layer as well as boron and manganese diffusion into the ruthenium layer during manufacturing. This made it possible to anneal at temperatures as high as 340° C. whereby a high MR ratio could be simultaneously achieved. | 08-16-2012 |
20120295133 | Writer with an AFM write gap - A perpendicular magnetic recording (PMR) head is fabricated with main pole and a trailing edge shield antiferromagnetically coupled across a write gap by either having the write gap layer formed as a synthetic antiferromagnetic tri-layer (SAF) or formed as a monolithic layer of antiferromagnetic material. The coupling improves the write performance of the writer by enhancing the perpendicular component of the write field and its gradient. Methods of fabricating the writer are provided. | 11-22-2012 |
20130027809 | HIGH DATA RATE MAGNETIC WRITER DESIGN - A high speed magnetic data writer containing a stitched pole tip that works in conjunction with the main pole is disclosed, together with a process for their manufacture. The material composition of each of these two sub-structures is slightly different; one sub-structure is optimized for high magnetic damping while the other sub-structure is optimized for high saturation magnetization. | 01-31-2013 |
20130029035 | CoFe/Ni Multilayer Film with Perpendicular Anisotropy for Microwave Assisted Magnetic Recording - A spin transfer oscillator with a seed/SIL/spacer/FGL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2) | 01-31-2013 |
20130029182 | CoFe/Ni Multilayer Film with Perpendicular Anisotropy for Microwave Assisted Magnetic Recording - A spin transfer oscillator with a seed/SIL/spacer/FGL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2) | 01-31-2013 |
20130069626 | Perpendicular spin torque oscillator FMR frequency measurement method - A method for measuring the frequency in a spin torque oscillator having at least a magnetic oscillation layer (MOL), junction layer, and magnetic reference layer (MRL) is disclosed. In a first embodiment, a small in-plane magnetic field is applied to the STO after a DC current is applied to excite the MOL into an oscillation state. The MRL has a perpendicular magnetization that is tilted slightly to give an in-plane magnetization component to serve as a reference layer for measuring the oscillation frequency of the MOL in-plane magnetization component. An AC voltage change is produced in the DC current as a result of variable STO resistance and directly correlates to MOL oscillation frequency. Alternatively, a field having both perpendicular and in-plane components may be applied externally or by forming the STO between two magnetic poles thereby producing an in-plane magnetization reference component in the MRL. | 03-21-2013 |
20130082787 | Spin injection layer robustness for microwave assisted magnetic recording - A spin transfer (torque) oscillator (STO) with a non-magnetic spacer formed between a spin injection layer (SIL) and a field generation layer (FGL), and with an interfacial layer comprised of Fe | 04-04-2013 |
20130084452 | Very thin high coercivity film and process for making it - High Hc (>4,000 Oe) and high Hk (>1 Tesla) has been achieved in FePt films as thin as 70 Angstroms. This was accomplished by starting with a relatively thick film having the required high coercivity, coating it with a suitable material such as Ta, and then using ion beam etching to remove surface material until the desired thickness was reached. | 04-04-2013 |
20130277780 | TMR Device with Low Magnetoresistive Free Layer - A high performance TMR sensor is fabricated by employing a free layer with a trilayer configuration represented by FeCo/CoFeB/CoB, FeCo/CoB/CoFeB, FeCo/CoFe/CoB, or FeCo/FeB/CoB may also be employed. Alternatively, CoNiFeB or CoNiFeBM formed by co-sputtering CoB with CoNiFe or CoNiFeM, respectively, where M is V, Ti, Zr, Nb, Hf, Ta, or Mo may be included in a composite free layer or as a single free layer in the case of CoNiFeBM. A 15 to 30% in improvement in TMR ratio over a conventional CoFe/NiFe free layer is achieved while maintaining low Hc and RA<3 ohm-um | 10-24-2013 |
20130286508 | Perpendicular Magnetic Recording Write Head with Milling Defined Track Width - A main pole layer having at least a leading taper and trimmed pole tip portion is described. The leading taper increases head field up to ≧15000 Oe even for narrow track widths approaching 50 nm. For MAMR applications, a STO and trailing shield are sequentially formed on a trailing pole tip side. Furthermore, full side shields may be added to reduce fringing field. A preferred embodiment includes both of a leading taper and trailing taper at the pole tip where leading taper angle is between 20° and 60° and trailing taper angle is from 10° to 45°. A method is provided for forming various embodiments of the present invention. A key feature is that milling depth at an effective neck height distance is greater than or equal to the pole tip thickness. A self aligned STO may be formed by the same ion milling step that defines track width. | 10-31-2013 |
20140078620 | MICROWAVE-ASSISTED MAGNETIC RECORDING HEAD, METHOD OF MANUFACTURING THE SAME, MAGNETIC HEAD ASSEMBLY USING THE SAME, AND MAGNETIC RECORDING/REPRODUCTION APPARATUS - According to one embodiment, a magnetic recording head manufacturing method includes forming a spin torque oscillator layer on a main magnetic pole layer, forming a mask on the spin torque oscillator layer, processing the spin torque oscillator layer by performing ion beam etching through the mask, and partially modifying the main magnetic pole layer through the mask. The partially modifying the main magnetic pole layer makes it possible to decrease the saturation flux density of the main magnetic pole layer in the modified portion, and form an unmodified main magnetic pole portion covered with the mask, and a modified portion around the main magnetic pole. | 03-20-2014 |
20140106182 | High Coercivity Magnetic Film for Use as a Hot Seed in a Magnetic Write Head and Method to Grow It - A sub-structure, suitable for use as a hot seed on which to form a perpendicular magnetic main write pole, is described. It is made up of a buffer layer of atomic layer deposited alumina on which there are one or more seed layers having a body-centered cubic (bcc) crystal structure. Finally, the high coercivity magnetic film lies on the seed layer(s). It is critical that the high coercivity magnetic film be deposited at a very low deposition rate (around 1 Angstrom per second). | 04-17-2014 |
20140116984 | Two Step Method to Fabricate Small Dimension Devices for Magnetic Recording Applications - A two part ion beam etch sequence involving low energy (<300 eV) is disclosed for fabricating a free layer width (FLW) as small as 20-25 nm in a MTJ element. A first etch process has one or more low incident angles and accounts for removal of 70% to 100% of the MTJ stack that is not covered by an overlying photoresist layer. The second etch process employs one or more high incident angles and a sweeping motion that is repeated during a plurality of cycles. Sidewall slope may be adjusted by varying the incident angle during either of the etch processes. FLW is about 30 nm less than an initial critical dimension in the photoresist layer while maintaining a MR ratio over 60% and low RA (resistance×area) value of 1.0 ohm-μm | 05-01-2014 |
20140183673 | Magnetic Read Head with MR Enhancements - A TMR stack or a GMR stack, ultimately formed into a sensor or MRAM element, include insertion layers of Fe or iron rich layers of FeX in its ferromagnetic free layer and/or the AP1 layer of its SyAP pinned layer. X is a non-magnetic, metallic element (or elements) chosen from Ta, Hf, V, Co, Mo, Zr, Nb or Ti whose total atom percent is less than 50%. The insertion layers are between 1 and 10 angstroms in thickness, with between 2 and 5 angstroms being preferred and, in the TMR stack, they are inserted adjacent to the interfaces between a tunneling barrier layer and the ferromagnetic free layer or the tunneling barrier layer and the AP1 layer of the SyAP pinned layer in the TMR stack. The insertion layers constrain interdiffusion of B and Ni from CoFeB and NiFe layers and block NiFe crystalline growth. | 07-03-2014 |
20140210022 | Magnetic Seed for Improving Blocking Temperature and Shield to Shield Spacing in a TMR Sensor - The blocking temperature of the AFM layer in a TMR sensor has been raised by inserting a magnetic seed layer between the AFM layer and the bottom shield. This gives the device improved thermal stability, including improved SNR and BER. | 07-31-2014 |
20140220385 | MR Enhancing Layer (MREL) For Spintronic Devices - The performance of an MR device has been improved by inserting one or more Magneto-Resistance Enhancing Layers (MRELs) into approximately the center of one or more of the magnetic layers such as an inner pinned (AP1) layer, spin injection layer (SIL), field generation layer (FGL), and a free layer. An MREL is a layer of a low band gap, high electron mobility semiconductor such as ZnO or a semimetal such as Bi. The MREL may further comprise a first conductive layer that contacts a bottom surface of the semiconductor or semimetal layer, and a second conductive layer that contacts a top surface of the semiconductor or semimetal layer. | 08-07-2014 |
20140220708 | MR Enhancing Layer (MREL) For Spintronic Devices - The performance of an MR device has been improved by inserting one or more Magneto-Resistance Enhancing Layers (MRELs) into approximately the center of one or more of the magnetic layers such as an inner pinned (AP1) layer, spin injection layer (SIL), field generation layer (FGL), and a free layer. An MREL is a layer of a low band gap, high electron mobility semiconductor such as ZnO or a semimetal such as Bi. The MREL may further comprise a first conductive layer that contacts a bottom surface of the semiconductor or semimetal layer, and a second conductive layer that contacts a top surface of the semiconductor or semimetal layer. | 08-07-2014 |
20140252517 | Thin Seeded Antiferromagnetic Coupled Side Shield for Sensor Biasing Applications - A composite side shield structure is disclosed for providing biasing to a free layer in a sensor structure. The sensor is formed between a bottom shield and top shield each having a magnetization in a first direction that is parallel to an ABS. The side shield is stabilized by an antiferromagnetic (AFM) coupling scheme wherein a bottom (first) magnetic layer is AFM coupled to a second magnetic layer which in turn is AFM coupled to an uppermost (third) magnetic layer. First and third magnetic layers each have a magnetization aligned in the first direction and are coupled to bottom and top shields, respectively, for additional stabilization. The top shield may be modified to include an AFM scheme for providing additional stabilization and guidance to magnetic moments within AFM coupled magnetic layers in the top shield, and to the third magnetic layer in the side shield. | 09-11-2014 |
20140252518 | High Moment Wrap-Around Shields for Magnetic Read Head Improvements - A wrap around shield structure is disclosed for biasing a free layer in a sensor and includes a bottom shield, side shields, and top shield in which each shield element comprises a high moment layer with a magnetization saturation greater than that of Ni | 09-11-2014 |
20140264665 | Reader Sensor Structure and its Method of Construction - A TMR (tunneling magnetoresistive) read sensor is formed in which a portion of the sensor stack containing the ferromagnetic free layer and the tunneling barrier layer is patterned to define a narrow trackwidth, but a synthetic antiferromagnetic pinning/pinned layer is left substantially unpatterned and extends in substantially as-deposited form beyond the lateral edges bounding the patterned portion. The narrow trackwidth of the patterned portion permits high resolution for densely recorded data. The larger pinning/pinned layer significantly improves magnetic stability and reduces thermal noise, while the method of formation eliminates possible ion beam etch (IBE) or reactive ion etch (RIE) damage to the edges of the pinning/pinned layer. | 09-18-2014 |
20140268423 | Dual-Piece Heat Sink Layer for Robust Reader in Magnetic Recording Head - A read head structure is disclosed with a dual piece heat sink layer having a front piece formed over a front portion of a dynamic flying height (DFH) element and a back piece above a back portion of the DFH element. A first (S1) shield is formed on the front piece and between the front piece and air bearing surface (ABS). Front and back pieces are separated by an insulator gap. The front piece is used to help control read gap protrusion. As a result, a bottom portion of the S1 shield protrudes to a greater extent than a top portion adjacent to the sensor thereby protecting the sensor from unwanted contact with the magnetic media. The dual piece heat sink layer also enables an improved Figure of Merit in terms of temperature rise in the reader per unit of actuation (nm) delivered by the DFH element. | 09-18-2014 |
20140287267 | TMR Device with Novel Free Layer - A TMR sensor with a free layer having a FL1/FL2/FL3 configuration is disclosed in which FL1 is FeCo or a FeCo alloy with a thickness between 2 and 15 Angstroms. The FL2 layer is made of CoFeB or a CoFeB alloy having a thickness from 2 to 10 Angstroms. The FL3 layer is from 10 to 100 Angstroms thick and has a negative λ to offset the positive λ from FL1 and FL2 layers and is comprised of CoB or a CoBQ alloy where Q is one of Ni, Mn, Tb, W, Hf, Zr, Nb, and Si. Alternatively, the FL3 layer may be a composite such as CoB/CoFe, (CoB/CoFe) | 09-25-2014 |
20140315045 | Supermalloy and Mu Metal Side and Top Shields for Magnetic Read Heads - The use of supermalloy-like materials for the side and top shields of a magnetic bit sensor is shown to provide better shielding protection from stray fields because of their extremely high permeability. | 10-23-2014 |