| Patent application number | Description | Published |
|---|
| 20090157372 | METHOD AND APPARATUS FOR MODELING SOURCE-DRAIN CURRENT OF THIN FILM TRANSISTOR - Provided are a method and apparatus for modeling source-drain current of a TFT. The method includes receiving sample data, the sample data including a sample input value and a sample output value; adjusting modeling variables according to the sample data; calculating a current model value according to the adjusted modeling variables; when a difference between the calculated current model value and the sample output value is smaller than a predetermined threshold value, fitting a current model by applying the adjusted modeling variables to the current model; applying actual input data to the fitted current model; and outputting a result value corresponding to the actual input data, wherein the current model is a model for predicting the source-drain current of the TFT. | 06-18-2009 |
| 20100006837 | COMPOSITION FOR OXIDE SEMICONDUCTOR THIN FILM, FIELD EFFECT TRANSISTOR USING THE COMPOSITION AND METHOD OF FABRICATING THE TRANSISTOR - Provided are a composition for an oxide semiconductor thin film, a field effect transistor using the same and a method of fabricating the field effect transistor. The composition includes an aluminum oxide, a zinc oxide, an indium oxide and a tin oxide. The thin film formed of the composition is in amorphous phase. The field effect transistor having an active layer formed of the composition can have an improved electrical characteristic and be fabricated by a low temperature process. | 01-14-2010 |
| 20100065803 | MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - Provided is a resistance variable non-volatile memory device using a trap-controlled Space Charge Limited Current (SCLC), and a manufacturing method thereof. The memory device includes a bottom electrode; an inter-electrode dielectric thin film diffusion prevention film formed on the bottom electrode; a dielectric thin film formed on the inter-electrode dielectric thin film diffusion prevention film and having a plurality of layers with different charge trap densities; and a top electrode formed on the dielectric thin film. | 03-18-2010 |
| 20100155716 | THIN FILM TRANSISTOR USING BORON-DOPED OXIDE SEMICONDUCTOR THIN FILM AND METHOD OF FABRICATING THE SAME - Provided are a thin film transistor, to which a boron-doped oxide semiconductor thin film is applied as a channel layer, and a method of fabricating the same. The thin film transistor includes source and drain electrodes, a channel layer, a gate insulating layer, and a gate electrode, which are formed on a substrate. The channel layer is an oxide semiconductor thin film doped with boron. Therefore, it is possible to remarkably improve electrical characteristics and high temperature stability of the thin film transistor. | 06-24-2010 |
| 20100155792 | TRANSPARENT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - Provided is a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. Here, the lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel. Thus, the use of the multi-layered transparent conductive layer can ensure transparency and conductivity, overcome a problem of contact resistance between the source and drain electrodes and a semiconductor, and improve processibility by patterning the multi-layered transparent conductive layer all at once, while deposition is performed layer by layer. | 06-24-2010 |
| 20100258437 | APPARATUS FOR REACTIVE SPUTTERING DEPOSITION - Provided is a reactive sputtering apparatus, and more particularly, a reactive sputtering apparatus capable of effectively ionizing a reactive gas using inductively coupled plasma (ICP). The reactive sputtering apparatus includes: a chamber having an inlet port for introducing a plasma gas thereinto and an outlet port for exhausting the gas used during reactive sputtering to the exterior; an ICP generator disposed on the chamber, ionizing a reactive gas, and injecting the ionized gas into the chamber; and at least one sputter gun located at a side surface of the chamber and supporting a target. Therefore, the reactive sputtering apparatus can improve an ionization rate of a reactive gas using inductively coupled plasma to reduce a process temperature and improve uniformity and step coverage of thin film deposition at low cost. | 10-14-2010 |
| 20110212612 | MEMORY DEVICES INCLUDING DIELECTRIC THIN FILM AND METHOD OF MANUFACTURING THE SAME - A memory device including a dielectric thin film having a plurality of dielectric layers and a method of manufacturing the same are provided. The memory device includes: a bottom electrode; at least one dielectric thin film disposed on the bottom electrode and having a plurality of dielectric layers with different charge trap densities from each other; and an top electrode disposed on the dielectric thin film. Therefore, a memory device, which can be readily manufactured by a simple process and can be highly integrated using its simple structure, can be provided. | 09-01-2011 |
| 20110249202 | POWER REDUCTION TELEVISION WITH PHOTO FRAME - A power reduction television with a photo frame is provided. The power reduction television includes a first display configured to display a first video image, a low power second display configured to display a second video image, and a display control unit configured to control the second display to display the second video image, when the first video image is not displayed through the first display. | 10-13-2011 |
