| Patent application number | Description | Published |
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| 20090135431 | Ultra Precision Profile Measuring Method - To provide a method for measuring a plane mirror or a curved surface mirror close to plane mirror for condensing hard X-rays or soft X-rays used in a radiation light facility, especially an elliptical or tubular object having a steep profile exceeding 1×10 | 05-28-2009 |
| 20100002838 | HIGH PRECISION POSTURE CONTROL METHOD OF X-RAY MIRROR - A high precision posture control method for sustaining the posture of an X-ray optical element constantly at 1 μrad or less. A longitudinal condensation mirror ( | 01-07-2010 |
| 20100183122 | X-RAY CONDENSING METHOD AND ITS DEVICE USING PHASE RESTORATION METHOD - An X-ray condensing method and its device are provided with an X-ray mirror that has a wavefront adjustable function to finely adjust a wavefront of a reflecting X-ray, measure an X-ray intensity distribution in the vicinity of a focus, measure an X-ray intensity distribution in the vicinity of the X-ray mirror or use a known X-ray intensity distribution of an incident X-ray, calculate a complex amplitude distribution at the reflective surface by using a phase restoration method from the X-ray intensity distribution in the vicinity of the focus and the X-ray intensity distribution in the vicinity of the reflective surface, calculate a wavefront aberration of an X-ray condensing optical system from the complex amplitude distribution, and control the reflective surface of the X-ray mirror with the wavefront adjustable function so that the wavefront aberration is minimized. | 07-22-2010 |
| 20110305317 | METHOD AND APPARATUS OF PRECISELY MEASURING INTENSITY PROFILE OF X-RAY NANOBEAM - Provided are a method and an apparatus of precisely measuring the intensity profile of an x-ray nanobeam, which can measure x-rays having different wavelengths with one knife edge and can perform optimal measurements corresponding to the depth of focus of an x-ray beam and the conditions of other measurement devices, using a dark field measurement method which enables precise measurements of the profile of an x-ray beam using a knife edge and using diffracted and transmitted x-rays. The knife edge ( | 12-15-2011 |
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| 20090231238 | Plasma display device - A plasma display device includes a plasma display module having a plasma display panel provided with a plurality of parallel electrodes, a circuit board for applying a voltage to the electrodes, and a chassis conductor configured to hold the plasma display panel and to which a ground of a circuit board is coupled, and further includes a cylindrical conductor portion configured to surround the plasma display module. | 09-17-2009 |
| 20090237907 | Plasma display device - A plasma display device capable of reducing an electromagnetic interference wave due to a driving current flowing in a plasma display panel is provided. The plasma display device includes a plasma display panel having electrodes that are parallel to each other, a driver circuit board for applying a voltage to the electrodes, a chassis conductor holding the plasma display panel and to which a ground of the driver circuit board is connected, and a first additional conductor plate provided to the chassis conductor via an insulating layer and to which grounds of at least one circuit board in circuit boards other than the driver circuit board are attached. | 09-24-2009 |
| 20090251390 | PLASMA DISPLAY DEVICE - A plasma display device including a plasma display panel having electrodes through which a driving current flows; a chassis conductor holding the plasma display panel and provided with a return circuit of the driving current; a conductive case enclosing the plasma display panel and the chassis conductor; and a binding portion for binding the chassis conductor and the conductive case to each other and having a connection state different depending upon a frequency of flowing current. The binding portion has a connection state in which an amount of flowing current is less than a half of that in a short-circuited state and a connection state in which the amount is not less than a half of that in a short-circuited state. | 10-08-2009 |
| 20110201214 | RECEPTACLE STRUCTURE, PRINTED WIRING BOARD STRUCTURE, AND ELECTRONIC DEVICE - A receptacle structure includes a housing structure, a terminal insulating board, a first terminal and a second terminal. The housing structure is configured to be mounted on a printed wiring board and to accommodate a plug. The terminal insulating board includes a top face and a bottom face that is opposite to the top face. The terminal insulating board is disposed inside the housing structure with the bottom face facing towards the printed wiring board. The first terminal is connected to the printed wiring board via the first rear connection part and to the terminal insulating board. The second terminal is connected to the printed wiring board via the first front connection part and to the terminal insulating board. The first front connection part has a width narrower than the first rear connection part and is connected to the printed wiring board away from the first rear connection part. | 08-18-2011 |
| 20110201215 | RECEPTACLE, PRINTED WIRING BOARD, AND ELECTRONIC DEVICE - In a receptacle, a ground terminal includes a bottom face connection portion connected to a bottom face of a terminal insulating board and a forward connection portion that is distanced from an opening. A signal terminal includes a top face connection portion connected to a top face on the opposite side of the bottom face connection portion and a rearward connection portion that is provided closer to the opening than the forward connection portion. | 08-18-2011 |
| 20110256739 | RECEPTACLE, PRINTED WIRING BOARD, AND ELECTRONIC DEVICE - A receptacle includes a signal terminal, a ground terminal, and a signal terminal. A second portion of the ground terminal is distanced from a first portion of the signal terminal in an extension direction. A third portion of the signal terminal is distanced from the first portion of the signal terminal in the extension direction. | 10-20-2011 |
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| 20080284026 | Semiconductor device and method for fabricating the same - A semiconductor device comprises a first insulating film formed on a semiconductor substrate, a first metal pattern formed on the first insulating film, a second insulating film formed on the first metal pattern, a second metal pattern formed on the second insulating film, and a third metal pattern formed in the second insulating film and connecting between the first metal pattern and the second metal pattern. The third metal pattern is a single continuous structure, and the principal orientation axes of crystals of a metal constituting the third metal pattern are parallel to the principal surface of the semiconductor substrate. | 11-20-2008 |
| 20090078935 | SEMICONDUCTOR DEVICE - Electrode pads respectively have a probe region permitting probe contact and a non-probe region. In each of the electrode pads arranged zigzag in two or more rows, a lead interconnect for connecting another electrode pad with an internal circuit is not placed directly under the probe region but placed directly under the non-probe region. | 03-26-2009 |
| 20090289357 | SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE USING THE SAME - A semiconductor element includes: a substrate having an integrated circuit; and a wire connection electrode and a bump connection electrode which are provided on a same main surface of the substrate as electrodes having a same connection function to the integrated circuit. The wire connection electrode is provided in a periphery of the main surface. The bump connection electrode is provided inside the wire connection electrode on the main surface. When a straight line dividing the main surface into two regions is determined, the wire connection electrode and the bump connection electrode are located opposite to each other with respect to the straight line. | 11-26-2009 |
| 20110233772 | SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE USING THE SAME - A semiconductor element includes: a substrate having an integrated circuit; and a wire connection electrode and a bump connection electrode which are provided on a same main surface of the substrate as electrodes having a same connection function to the integrated circuit. The wire connection electrode is provided in a periphery of the main surface. The bump connection electrode is provided inside the wire connection electrode on the main surface. When a straight line dividing the main surface into two regions is determined, the wire connection electrode and the bump connection electrode are located opposite to each other with respect to the straight line. | 09-29-2011 |
| 20110266540 | SEMICONDUCTOR DEVICE - Electrode pads respectively have a probe region permitting probe contact and a non-probe region. In each of the electrode pads arranged zigzag in two or more rows, a lead interconnect for connecting another electrode pad with an internal circuit is not placed directly under the probe region but placed directly under the non-probe region. | 11-03-2011 |
