Patent application number | Description | Published |
20080253420 | Light-emitting device - The conventional light-emitting element formed by an electroluminescent material has a problem due to poor color purity of light emission. Accordingly, it is an object of the present invention to provide a high luminance and high efficiency light-emitting device formed by an organic compound material. The invention provides a light-emitting device in which an organic compound layer that emits light having an emission peak with a half-band width of at most 10 nm upon applying current is interposed between a pair of electrodes is provided. The variation of emission peak intensity depending on a current density can be sorted by two linear regions with different gradients. A region of a sharp gradient is at a higher current density side compared to a region of a slow gradient. TFTs are provided to each pixel in order to perform active matrix driving. | 10-16-2008 |
20090051046 | Semiconductor device and manufacturing method for the same - A semiconductor substrate provided with an integrated circuit is polished by CMP or the like, and the semiconductor substrate is made into a thin film by forming an embrittlement layer in the semiconductor substrate and separating a part of the semiconductor substrate; thus, semiconductor chips such as IC chips and LSI chips which are thinner than ever are obtained. Moreover, such thinned LSI chips are stacked and electrically connected through wirings penetrating through the semiconductor substrate; thus, a three dimensional semiconductor integrated circuit with improved packing density is obtained. | 02-26-2009 |
20090052491 | Organic laser apparatus - The invention is an organic laser apparatus including an organic compound that radiates laser light when current is injected. In an organic compound layer employed for the laser apparatus of the invention, a laminated structure and film thickness of each layer are determined in consideration of wavelength so as to radiate laser light. The organic compound layer collectively means each thin film containing mainly an organic compound formed between a pair of electrodes. The organic compound layer is formed so as to be sandwiched between a pair of electrodes and, preferably, formed by a plurality of layers each having a different carrier transport property and a different light emission wavelength. In addition, it is preferable to form a so-called resonator structure, in which a reflector is provided between the pair of electrodes. | 02-26-2009 |
20100054291 | ORGANIC LASER DEVICE - To provide a small and lightweight organic laser device which can be manufactured in a reproductive manner and from which laser light with a desired wavelength can be obtained. A first substrate provided with a light-emitting element having a light-emitting layer between a pair of electrodes and a second substrate provided with a laser medium including a laser dye face each other and one of the pair of electrodes, which is placed between the light-emitting layer and the laser medium, has a light transmitting property. With such a structure, a laser device with which a laser medium and a light source are integrated can be provided. | 03-04-2010 |
20100054294 | SOLID-STATE DYE LASER - To reduce the laser threshold by efficiently exciting a light-emitting body in a solid-state dye laser with light having high density, thereby facilitating emission of laser beams, and to miniaturize a solid-state dye laser including an excitation light source. A solid-state dye laser capable of emitting laser beams by efficiently introducing light from an excitation light source to a light-emitting body incorporated in an optical resonator structure and exciting the light-emitting body with light with high density, is realized. | 03-04-2010 |
20100055896 | SEMICONDUCTOR DEVICE - It is an object of the present invention to provide a volatile organic memory in which data can be written other than during manufacturing and falsification by rewriting can be prevented, and to provide a semiconductor device including such an organic memory. It is a feature of the invention that a semiconductor device includes a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction; a memory cell array including a plurality of memory cells each provided at one of intersections of the bit lines and the word lines; and memory elements provided in the memory cells, wherein the memory elements include bit lines, an organic compound layer, and the word lines, and the organic compound layer includes a layer in which an inorganic compound and an organic compound are mixed. | 03-04-2010 |
20100190312 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To provide a semiconductor device which is higher functional and reliable and a technique capable of manufacturing the semiconductor device with a high yield at low cost without complexing the apparatus or process. At least one of a first conductive layer and a second conductive layer is formed containing one kind or plural kinds of indium, tin, lead, bismuth, calcium, manganese, or zinc; or oxidation treatment is performed at least one of interfaces between an organic compound layer and the first conductive layer and between the organic compound layer and the second conductive layer. The first conductive layer, the organic compound layer, and the second conductive layer which are formed over a first substrate with a peeling layer interposed therebetween can be peeled from the first substrate with the peeling layer, and transposed to a second substrate. | 07-29-2010 |
20100295034 | SEMICONDUCTOR DEVICE - It is an object of the present invention to provide a semiconductor device in which data can be written except when manufacturing the semiconductor device and that counterfeits can be prevented. Moreover, it is another object of the invention to provide an inexpensive semiconductor device including a memory having a simple structure. The semiconductor device includes a field effect transistor formed over a single crystal semiconductor substrate, a first conductive layer formed over the field effect transistor, an organic compound layer formed over the first conductive layer, and a second conductive layer formed over the organic compound layer, and a memory element includes the first conductive layer, the organic compound, and the second conductive layer. According to the above structure, a semiconductor device which can conduct non-contact transmission/reception of data can be provided by possessing an antenna. | 11-25-2010 |
20110031469 | SEMICONDUCTOR DEVICE - The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer. | 02-10-2011 |
20110186802 | MEMORY DEVICE AND A SEMICONDUCTOR DEVICE - The present invention provides a memory device and a semiconductor device which have high reliability for writing at low cost. Furthermore, the present invention provides a memory device and a semiconductor device having a non-volatile memory element in which data can be additionally written and which can prevent forgery due to rewriting and the like. The memory element includes a first conductive layer, a second conductive layer, and an organic compound layer, which is formed between the first conductive layer and the second conductive layer, and which has a photosensitized oxidation reduction agent which can be an excited state by recombination energy of electrons and holes and a substance which can react with the photosensitized oxidation reduction agent. | 08-04-2011 |
20110210412 | MEMORY ELEMENT, MEMORY DEVICE, AND SEMICONDUCTOR DEVICE - On object of the invention is to provide a nonvolatile memory device, in which data can be added to the memory device after a manufacturing process and forgery and the like by rewriting can be prevented, and a semiconductor device including the memory device. Another object of the invention is to provide a highly-reliable, inexpensive, and nonvolatile memory device and a semiconductor device including the memory device. A memory element includes a first conductive layer, a second conductive layer, a first insulating layer with a thickness of 0.1 nm or more and 4 nm or less being in contact with the first conductive layer, and an organic compound layer interposed between the first conductive layer, the first insulating layer, and the second conductive layer. | 09-01-2011 |
20110212363 | POWER STORAGE SYSTEM AND MANUFACTURING METHOD THEREFOR AND SECONDARY BATTERY AND CAPACITOR - The present invention relates to a power storage system including a negative electrode which has a crystalline silicon film provided as a negative electrode active material on the surface of a current collector and contains a conductive oxide in a surface layer section of the crystalline silicon film. Alternatively, the present invention relates to a method for manufacturing a power storage system, which includes the step of forming an amorphous silicon film on a current collector, adding a catalytic element for promoting crystallization of the amorphous silicon, onto a surface of the amorphous silicon film, heating the amorphous silicon film with the catalytic element added to crystallize the amorphous silicon film and thereby form a crystalline silicon film, and using the crystalline silicon film as a negative electrode active material layer. | 09-01-2011 |
20110236736 | ENERGY STORAGE DEVICE AND MANUFACTURING METHOD THEREOF - An object is to provide an energy storage device capable of supplying stable voltage and easily detecting remaining capacity and charging capacity. The energy storage device includes a positive electrode, a negative electrode formed so as to face the positive electrode, and an electrolyte interposed between the positive electrode and the negative electrode, in which a discharging curve or a charging curve of the positive electrode has plateaus (also referred to as flat portions of the potential). Specifically, the discharging curve or the charging curve of the positive electrode has a plurality of plateaus, and positive electrode potential can be monitored in plural steps, whereby the remaining capacity and the charging capacity can be easily detected. | 09-29-2011 |
20110236757 | POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME - A power storage device with favorable battery characteristics and a manufacturing method thereof are provided. The power storage device includes at least a positive electrode and a negative electrode provided so as to face the positive electrode with an electrolyte provided therebetween. The positive electrode includes a collector and a film containing an active material over the collector. The film containing the active material contains Li | 09-29-2011 |
20110266654 | POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided is a method for manufacturing a power storage device in which a crystalline silicon layer including a whisker-like crystalline silicon region is formed as an active material layer over a current collector by a low-pressure CVD method in which heating is performed using a deposition gas containing silicon. The power storage device includes the current collector, a mixed layer formed over the current collector, and the crystalline silicon layer functioning as the active material layer formed over the mixed layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions which project over the crystalline silicon region. With the protrusions, the surface area of the crystalline silicon layer functioning as the active material layer can be increased. | 11-03-2011 |
20110294005 | POWER STORAGE DEVICE, ELECTRODE, AND ELECTRIC DEVICE - An object is to improve characteristics of a power storage device by devising the shape of an active material layer. The characteristics of the power storage device can be improved by providing a power storage device including a first electrode, a second electrode, and an electrolyte provided between the first electrode and the second electrode. The second electrode includes an active material layer. The active material layer includes a plurality of projecting portions containing an active material and a plurality of particles containing an active material, which are arranged over the plurality of projecting portions or in a space between the plurality of projecting portions. | 12-01-2011 |
20110294010 | POWER STORAGE DEVICE AND MANUFACTURING METHOD THEREOF - It is an object to perform insertion and extraction of lithium ions effectively at a positive electrode of a power storage device so as to increase the reaction speed. Further, it is an object to increase the capacitance per unit volume of an active material of a positive electrode. A layer containing carbon and an active material layer are stacked at a positive electrode, whereby insertion and extraction of lithium ions are effectively performed at the positive electrode and reaction speed can be increased, even when the thickness of the positive electrode is increased. The active material layer interposed between the layers each containing carbon includes particulate crystals and therefore has high density, so that the active material can have large capacitance per unit volume. | 12-01-2011 |
20110294011 | ENERGY STORAGE DEVICE AND MANUFACTURING METHOD THEREOF - An energy storage device is provided in which a discharge capacity can be high and/or in which degradation of an electrode due to repetitive charge and discharge can be reduced. An electrode of the energy storage device which includes a crystalline silicon layer serving as an active material layer is provided. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region having a plurality of protrusions projected upward from the crystalline silicon region. The protrusions include a first protrusion and a second protrusion; the second protrusion has a larger length along the axis and a sharper tip than the first protrusion. | 12-01-2011 |
20110300445 | POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME - A power storage device which can have an improved performance such as higher discharge capacity and in which deterioration due to peeling of an active material layer or the like is difficult to occur, and a method for manufacturing the power storage device are provided. The power storage device includes a current collector, a mixed layer formed over the current collector, and a crystalline silicon layer which is formed over the mixed layer and functions as an active material layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions projecting over the crystalline silicon region. The whisker-like crystalline silicon region includes a protrusion having a bending or branching portion. | 12-08-2011 |
20120108029 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is an object of the present invention to provide a technique in which a high-performance and high reliable memory device and a semiconductor device provided with the memory device are manufactured at low cost with high yield. The semiconductor device includes an organic compound layer including an insulator over a first conductive layer and a second conductive layer over the organic compound layer including an insulator. Further, the semiconductor device is manufactured by forming a first conductive layer, discharging a composition of an insulator and an organic compound over the first conductive layer to form an organic compound layer including an insulator, and forming a second conductive layer over the organic compound layer including an insulator. | 05-03-2012 |
20130045156 | METHOD FOR FORMING GRAPHENE AND CRAPHENE OXIDE SALT, AND GRAPHENE OXIDE SALT - A first precipitate is formed by mixing graphite and an oxidizer containing an alkali metal salt in a solution. Next, a second precipitate is formed by ionizing the oxidizer which is included in the first precipitate, with an acid solution, and removing the oxidizer from the first precipitate. Then, a dispersion liquid in which graphene oxide is dispersed is prepared by mixing the second precipitate and water to form a mixed solution and then applying ultrasonic waves to the mixed solution or mechanically stirring the mixed solution, so that the graphene oxide is separated from graphite oxide that is the graphite which is included in the second precipitate and oxidized. Next, graphene oxide salt is formed by mixing the dispersion liquid, a basic solution, and an organic solvent and reacting the graphene oxide included in the dispersion liquid and a base included in the basic solution to each other. | 02-21-2013 |
20130059195 | ELECTRODE FOR POWER STORAGE DEVICE AND POWER STORAGE DEVICE - To provide an electrode for a power storage device, which has high reliability and can be miniaturized. To provide a power storage device including the electrode. In the electrode, a stress-relieving layer which relieves internal stress of an active material layer including a whisker is provided over a current collector. By the stress-relieving layer, deformation of the current collector can be suppressed and the productivity of the power storage device can be increased. In addition, the size of the power storage device can be reduced and the reliability thereof can be increased. Graphene may be formed so as to cover the active material layer including a whisker. | 03-07-2013 |
20130266859 | GRAPHENE OXIDE, POSITIVE ELECTRODE FOR NONAQUEOUS SECONDARY BATTERY USING GRAPHENE OXIDE, METHOD OF MANUFACTURING POSITIVE ELECTRODE FOR NONAQUEOUS SECONDARY BATTERY, NONAQUEOUS SECONDARY BATTERY, AND ELECTRONIC DEVICE - A graphene oxide used as a raw material of a conductive additive for forming an active material layer with high electron conductivity with a small amount of a conductive additive is provided. A positive electrode for a nonaqueous secondary battery using the graphene oxide as a conductive additive is provided. The graphene oxide is used as a raw material of a conductive additive in a positive electrode for a nonaqueous secondary battery and, in the graphene oxide, the weight ratio of oxygen to carbon is greater than or equal to 0.405. | 10-10-2013 |
20130266869 | GRAPHENE AND POWER STORAGE DEVICE, AND MANUFACTURING METHOD THEREOF - The formation method of graphene includes the steps of forming a layer including graphene oxide over a first conductive layer; and supplying a potential at which the reduction reaction of the graphene oxide occurs to the first conductive layer in an electrolyte where the first conductive layer as a working electrode and a second conductive layer with a as a counter electrode are immersed. A manufacturing method of a power storage device including at least a positive electrode, a negative electrode, an electrolyte, and a separator includes a step of forming graphene for an active material layer of one of or both the positive electrode and the negative electrode by the formation method. | 10-10-2013 |
20130337320 | METHOD FOR MANUFACTURING STORAGE BATTERY ELECTRODE, STORAGE BATTERY ELECTRODE, STORAGE BATTERY, AND ELECTRONIC DEVICE - To provide a method for forming a storage battery electrode including an active material layer with high density in which the proportion of conductive additive is low and the proportion of the active material is high. To provide a storage battery having a higher capacity per unit volume of an electrode with the use of a storage battery electrode formed by the formation method. A method for forming a storage battery electrode includes the steps of forming a mixture including an active material, graphene oxide, and a binder; providing a mixture over a current collector; and immersing the mixture provided over the current collector in a polar solvent containing a reducer, so that the graphene oxide is reduced. | 12-19-2013 |
20140295068 | METHOD FOR MANUFACTURING ELECTRODE FOR STORAGE BATTERY - To provide a storage battery electrode including an active material layer with high density that contains a smaller percentage of conductive additive. To provide a storage battery having a higher capacity per unit volume of an electrode with the use of the electrode for a storage battery. A slurry that contains an active material and graphene oxide is applied to a current collector and dried to form an active material layer over the current collector, the active material layer over the current collector is rolled up together with a spacer, and a rolled electrode which includes the spacer are immersed in a reducing solution so that graphene oxide is reduced. | 10-02-2014 |
20150064565 | GRAPHENE AND POWER STORAGE DEVICE, AND MANUFACTURING METHOD THEREOF - The formation method of graphene includes the steps of forming a layer including graphene oxide over a first conductive layer; and supplying a potential at which the reduction reaction of the graphene oxide occurs to the first conductive layer in an electrolyte where the first conductive layer as a working electrode and a second conductive layer with a as a counter electrode are immersed. A manufacturing method of a power storage device including at least a positive electrode, a negative electrode, an electrolyte, and a separator includes a step of forming graphene for an active material layer of one of or both the positive electrode and the negative electrode by the formation method. | 03-05-2015 |