Patent application number | Description | Published |
20090046550 | Optical Recording Medium, Recording Method Thereof And Evaluation Method Of Optical Recording Medium - A recording method of an optical recording medium comprises irradiating the medium with a laser having m pulse sets each comprising a heating pulse and a cooling pulse, in which m is a natural number; and scanning the medium with the laser at a scanning speed v to record marks each of a length nT, in which n is a natural number of 3 or more and T is a clock cycle, wherein a length T | 02-19-2009 |
20090116365 | Optical Recording Medium and Optical Recording Method - An optical recording method to record information with a mark length recording method, where an amorphous mark and a crystal space are recorded only in the groove of a substrate having a guide groove, with the temporal length of the mark and the space of nT (T denotes a reference clock period; n denotes a natural number). The space is formed at least by an erase pulse of power P | 05-07-2009 |
20090323508 | PHOTOSENSITIZED COMPOSITE MATERIAL, THREE-DIMENSIONAL MEMORY MATERIAL AND RECORDING MEDIUM, OPTICAL POWER LIMITING MATERIAL AND ELEMENT, AND PHOTOCURING MATERIAL AND STEREOLITHOGRAPHY SYSTEM, AND FLUORESCENT MATERIAL FOR MULTIPHOTON FLUORESCENCE MICROSCOPE AND MULTIPHOTON FLUORESCENCE MICROSCOPE - A photosensitized composite material and a material, an element, a device, and the like, which employ the photosensitized composite material, are provided. In the photosensitized composite material, multiphoton absorption compounds are highly sensitized for practical use by utilizing an enhanced plasmon field. The photosensitized composite material has a structure where the multiphoton absorption compounds are linked to the surface of a fine metal particle through linking groups. The fine metal particle generates an enhanced surface plasmon field in resonance with a multiphoton excitation wavelength. The multiphoton absorption compounds have a molecular structure enabling multiphoton absorption. The photosensitized composite material is contained in or used for, for example, a three-dimensional memory material and a three-dimensional recording medium, an optical power limiting material and an optical power limiting element, a photocuring material and a stereolithography system, and a fluorescent material for a multiphoton fluorescence microscope and a multiphoton fluorescence microscope. | 12-31-2009 |
20100055448 | MULTIPHOTON ABSORPTION FUNCTIONAL MATERIAL, COMPOSITE LAYER HAVING MULTIPHOTON ABSORPTION FUNCTION AND MIXTURE, AND OPTICAL RECORDING MEDIUM, PHOTOELECTRIC CONVERSION ELEMENT, OPTICAL CONTROL ELEMENT, AND OPTICAL MODELING SYSTEM USING THE SAME - A multiphoton absorption functional material including one of: fine particles of metal, and fine particles partly coated with the metal, the metal generating enhanced surface plasmon field on a metal surface, wherein the fine particles or the fine particles partly coated with the metal are dispersed in a multiphoton absorption material, and wherein the multiphoton absorption functional material is a bulk body. | 03-04-2010 |
20140009514 | P-TYPE OXIDE, P-TYPE OXIDE-PRODUCING COMPOSITION, METHOD FOR PRODUCING P-TYPE OXIDE, SEMICONDUCTOR DEVICE, DISPLAY DEVICE, IMAGE DISPLAY APPARATUS, AND SYSTEM - A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCu | 01-09-2014 |
20140299877 | COATING LIQUID FOR FORMING METAL OXIDE THIN FILM, METAL OXIDE THIN FILM, FIELD-EFFECT TRANSISTOR, AND METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTOR - A coating liquid for forming a metal oxide thin film includes: an inorganic indium compound; an inorganic calcium compound or an inorganic strontium compound, or both thereof; and an organic solvent. | 10-09-2014 |
20140353648 | P-TYPE OXIDE, COMPOSITION FOR PRODUCING P-TYPE OXIDE, METHOD FOR PRODUCING P-TYPE OXIDE, SEMICONDUCTOR ELEMENT, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM - To provide is a p-type oxide, including an oxide, wherein the oxide includes: Cu; and an element M, which is selected from p-block elements, and which can be in an equilibrium state, as being present as an ion, wherein the equilibrium state is a state in which there are both a state where all of electrons of p-orbital of an outermost shell are lost, and a state where all of electrons of an outermost shell are lost, and wherein the p-type oxide is amorphous. | 12-04-2014 |
20150028334 | ELECTROCONDUCTIVE THIN FILM, COATING LIQUID FOR FORMING ELECTROCONDUCTIVE THIN FILM, FIELD-EFFECT TRANSISTOR, AND METHOD FOR PRODUCING FIELD-EFFECT TRANSISTOR - To provide an electroconductive thin film, containing: a metal oxide containing indium and tin; and gold. | 01-29-2015 |