Patent application number | Description | Published |
20100009485 | SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING SAME, AND OPTICAL MODULE - A semiconductor light emitting device capable of realizing a long life, and a method of manufacturing the same. The impurity concentration of hydrogen in the active layer is 3×10 | 01-14-2010 |
20110142090 | LASER DIODE AND METHOD OF MANUFACTURING LASER DIODE - A laser diode includes: a substrate; a semiconductor layer including a lower cladding layer, an active layer, and an upper cladding layer; a strip-shaped ridge provided on an upper cladding layer side in the semiconductor layer; and a pair of resonator end faces sandwiching the semiconductor layer and the ridge. The substrate includes strip-shaped grooves provided on both sides of a portion facing the ridge along the portion facing the ridge, and extending in a direction different from a direction orthogonal to the extending direction of the ridge, and L | 06-16-2011 |
20120119205 | THIN FILM TRANSISTOR, DISPLAY DEVICE, AND ELECTRONIC DEVICE - A thin film transistor, which is capable of improving carrier mobility, and a display device and an electronic device, each of which uses the thin film transistor, are provided. The thin film transistor includes: a gate electrode; an oxide semiconductor layer including a multilayer film including a carrier travel layer configuring a channel and a carrier supply layer for supplying carriers to the carrier travel layer; a gate insulating film provided between the gate electrode and the oxide semiconductor layer; and a pair of electrodes as a source and a drain. A conduction band minimum level or a valence band maximum level corresponding to a carrier supply source of the carrier supply layer is higher in energy than a conduction band minimum level or a valence band maximum level corresponding to a carrier supply destination of the carrier travel layer. | 05-17-2012 |
20120205648 | THIN-FILM TRANSISTOR, DISPLAY APPARATUS AND ELECTRONIC APPARATUS - Disclosed herein is a thin-film transistor having a gate electrode; a source electrode and a drain electrode which form a source/drain-electrode pair; and a channel layer which is provided between the gate electrode and the source/drain-electrode pair, includes a poly-crystal oxide semiconductor material and has a film thickness smaller than the average diameter of crystal grains of the poly-crystal oxide semiconductor material. | 08-16-2012 |
20130105836 | LIGHT EMITTING ELEMENT, METHOD OF MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE | 05-02-2013 |
20130248852 | THIN FILM TRANSISTOR, MANUFACTURING METHOD OF THE SAME AND ELECTRONIC EQUIPMENT - Disclosed herein is a thin film transistor including: a channel layer made of a crystalline oxide semiconductor having a bixbyte structure, in which (222) planes of the channel layer are roughly parallel to the carrier travel direction. | 09-26-2013 |
20140362429 | DISPLAY UNIT AND ELECTRONIC APPARATUS - Provided is a display unit that includes: a pair of a first substrate and a second substrate that are arranged in opposition to each other; a display layer provided between the first substrate and the second substrate; and a display mode switching layer having an aperture for each pixel, and provided between the display layer and the second substrate. | 12-11-2014 |
20150207100 | DISPLAY UNIT AND ELECTRONIC APPARATUS - A display unit including a first substrate and a second substrate that are disposed to face each other, a first organic insulating layer on the first substrate, a plurality of light-emitting elements arrayed in a display region, the display region on the first organic insulating layer and facing the second substrate and a first moisture-proof film covering the first organic insulating layer in a peripheral region, in which the peripheral region is provided on the first substrate and surrounds the display region. | 07-23-2015 |