Migaku
Migaku Kobayashi, Tokyo JP
Patent application number | Description | Published |
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20150055394 | Semiconductor Device - A semiconductor device comprises a semiconductor substrate including first and second regions that have different conductivity types from each other; an isolation region extending continuously over the first and second regions and having a shallow trench covered by a field insulator; first and second active regions placed in respective first and second regions and being each surrounded by the isolation region; a gate electrode disposed in a lower portion of a gate groove that extends continuously from the first active region to the second active region via the isolation region, the gate groove being shallower than the shallow trench; a cap insulating film disposed in an upper portion of the gate groove so as to cover an upper surface of the gate electrode; first and second transistors placed in respective first and second active regions and sharing the gate electrode; and a logic circuit including the first and second transistors connected in series. | 02-26-2015 |
Migaku Takahashi, Sendai JP
Patent application number | Description | Published |
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20090168270 | EXCHANGE-COUPLED ELEMENT AND MAGNETORESISTANCE EFFECT ELEMENT - In comparison with conventional exchange-coupled elements, the exchange-coupled element of the present invention has greater unidirectional magnetization anisotropy. The exchange-coupled element comprises: an ordered antiferromagnetic layer; and a pinned magnetic layer being exchange-coupled with the ordered antiferromagnetic layer, the pinned magnetic layer having unidirectional magnetization anisotropy. The pinned magnetic layer is constituted by a first pinned magnetic layer having a composition, which can have a face-centered cubic lattice structure, and a second pinned magnetic layer having a composition, which can have a body-centered cubic lattice structure. | 07-02-2009 |
20090169915 | METHOD OF PRODUCING MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETORESISTANCE EFFECT ELEMENT - The method of the present invention provides a magnetoresistance effect element, which is capable of having a high MR ratio, corresponding to high density recording and being suitably applied to a magnetoresistance device even though a barrier layer is thinned to reduce resistance of the magnetoresistance effect element. The method of producing the magnetoresistance effect element, which includes the barrier layer composed of an oxidized metal, a first magnetic layer contacting one of surfaces of the barrier layer and a second magnetic layer contacting the other surface thereof, comprises the steps of: laminating the barrier layer on the first magnetic layer with using a target composed of the oxidized metal; and laminating the second magnetic layer on the barrier layer. The barrier layer is annealed before laminating the second magnetic layer thereon. | 07-02-2009 |
Migaku Takahashi, Miyagi-Ken JP
Patent application number | Description | Published |
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20120244356 | FERROMAGNETIC PARTICLES AND PROCESS FOR PRODUCING THE SAME, ANISOTROPIC MAGNET AND BONDED MAGNET - The present invention relates to Fe | 09-27-2012 |
20130257573 | FERROMAGNETIC PARTICLES AND PROCESS FOR PRODUCING THE SAME, ANISOTROPIC MAGNET AND BONDED MAGNET - The present invention relates to ferromagnetic particles comprising an Fe | 10-03-2013 |