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Michiyoshi
Michiyoshi Fuyama, Kakegawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20110307984 | New Guinea impatiens plant named 'SAKIMP021' - A New Guinea | 12-15-2011 |
Michiyoshi Nagashima, Nara JP
| Patent application number | Description | Published |
|---|---|---|
| 20090035887 | SOLID-STATE IMAGE PICKUP ELEMENT, METHOD FOR MANUFACTURING SUCH SOLID-STATE IMAGE PICKUP ELEMENT AND OPTICAL WAVEGUIDE FORMING DEVICE - A solid-state imaging device of the present invention includes a base | 02-05-2009 |
| 20090127430 | COMPOUND-EYE IMAGING APPARATUS - A plurality of imaging optical lenses ( | 05-21-2009 |
| 20090160997 | IMAGING DEVICE - A plurality of lenses | 06-25-2009 |
| 20110141309 | IMAGING APPARATUS AND METHOD FOR PRODUCING THE SAME, PORTABLE EQUIPMENT, AND IMAGING SENSOR AND METHOD FOR PRODUCING THE SAME - A plurality of imaging regions are provided in one-to-one correspondence with a plurality of optical systems and are disposed on optical axes of the respective optical systems. Each imaging region has a plurality of pixels. The imaging apparatus further comprises an origin detecting means for detecting an origin of each imaging region, a pixel position specifying means for specifying positions of a plurality of pixels included in each imaging region using the origin as a reference, and a combination means for combining a plurality of images captured by the respective imaging regions. Thereby, it is possible to make a thin imaging apparatus capable of being easily assembled. | 06-16-2011 |
Michiyoshi Takano, Okaya JP
| Patent application number | Description | Published |
|---|---|---|
| 20100252829 | SEMICONDUCTOR DEVICE, CIRCUIT SUBSTRATE, ELECTRO-OPTIC DEVICE AND ELECTRONIC APPARATUS - A semiconductor device in the first embodiment includes: an electrode pad and a resin projection, formed on an active surface; a conductive film deposited from a surface of the electrode pad to a surface of the resin projection; a resin bump formed with the resin projection and with the conductive film. The semiconductor device is conductively connected to the opposing substrate through the resin bump electrode. The testing electrode is formed with the conductive film that is extended and applied to the opposite side of the electrode pad across the resin projection. | 10-07-2010 |
Michiyoshi Takano, Chino JP
| Patent application number | Description | Published |
|---|---|---|
| 20090139085 | CIRCUIT SUBSTRATES, SEMICONDUCTOR DEVICE, SEMICONDUCTOR MANUFACTURING APPARATUSES, METHODS FOR MANUFACTURING CIRCUIT SUBSTRATES, AND METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICES - A method is provided to control the height of bump electrodes and increase a clearance between edge sections of a semiconductor chip and lead terminals of a tape substrate. By pushing up on a tape substrate by a bonding stage, and applying suction to the tape substrate through a suction groove, boundary portions of a semiconductor chip mounting region are drawn into the suction groove, and curved sections are formed in the tape substrate at locations corresponding to edge sections of a semiconductor chip and inclined sections disposed in outer circumference sections of the curved sections are formed in the tape substrate. | 06-04-2009 |
Michiyoshi Takano, Okaya-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090035929 | Method of manufacturing semiconductor device - A method of manufacturing a semiconductor device includes: (a) forming an insulating layer having a contact hole on a semiconductor section in which an element is formed; (b) forming an electrode pad on the insulating layer so that a depression or a protrusion remains at a position at which the electrode pad overlaps the contact section; (c) forming a passivation film to have an opening on a first section of the electrode pad and to be positioned on a second section of the electrode pad; (d) forming a barrier layer on the electrode pad; and (e) forming a bump to be larger than the opening in the passivation film and to be partially positioned on the passivation film. The contact section is connected with the second section at a position within a range in which the contact section overlaps the bump while avoiding the first section of the electrode pad. | 02-05-2009 |