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Michiue, JP
Atsuo Michiue, Komatsushima-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080198886 | NITRIDE SEMICONDUCTOR LASER ELEMENT - The present invention provides a nitride semiconductor laser element, comprising: a nitride semiconductor structure having a first nitride semiconductor layer, a second nitride semiconductor layer, and an active layer provided between the first and second nitride semiconductor layers; a cavity end face provided to the nitride semiconductor structure; and a protective film having a hexagonal crystal structure, and having a first region provided on a first crystal surface of the nitride semiconductor structure in the cavity end face and a second region provided on a second crystal surface in the surface of at least one of the first and second nitride semiconductor layer, the first and second regions of the protective film are oriented in the same axial direction as that of the respective first and second crystal surfaces. | 08-21-2008 |
| 20080205464 | NITRIDE SEMICONDUCTOR LASER ELEMENT - A nitride semiconductor laser element has a first nitride semiconductor layer, an active layer, a second nitride semiconductor layer, and a first protective film in contact with a cavity end face of the nitride semiconductor layer, wherein the first protective film in contact with at least the active layer of the cavity end face has a region thinner than the maximum thickness of the first protective film. | 08-28-2008 |
| 20090010294 | NITRIDE SEMICONDUCTOR LASER ELEMENT - A nitride semiconductor laser element, comprises; nitride semiconductor layers in which a nitride semiconductor layer of a first conduction type, an active layer, and a nitride semiconductor layer of a second conduction type that is different from the first conduction type are laminated in that order; a cavity end face formed by the nitride semiconductor layers; and a protective film formed on the cavity end face, the protective film has a region in which an axial orientation of crystals is different in the direction of lamination of the nitride semiconductor layers. | 01-08-2009 |
| 20100158066 | NITRIDE SEMICONDUCTOR LASER ELEMENT - A nitride semiconductor laser element includes a nitride semiconductor layer of a first conduction type, an active layer, and a nitride semiconductor layer of a second conduction type that is different from the first conduction type are laminated in that order, a cavity end face formed by the nitride semiconductor layers, and a protective film formed on the cavity end face. The nitride semiconductor layers of the first and second conduction types have layers containing Al, and the active layer has layer containing In. The protective film has a region in which an axial orientation of crystals is the same as that of the cavity end face on the nitride semiconductor layers of the first and second conduction types, and has another region in which an axial orientation of crystals is different from that of the cavity end face on the active layer. | 06-24-2010 |
Atsuo Michiue, Anan-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100308445 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor layer stacked on a substrate, a stripe-shaped ridge formed on a surface of the semiconductor layer, and electrode formed on an upper surface of the ridge and a protective film disposed on each side of the ridge. The electrode includes a flat portion having a flat surface substantially parallel to the upper surface of the ridge and sloped portions on both sides of the flat portion with each of the sloped portions having a sloped surface that is sloped with respect to the upper surface of the ridge. The protective film covers a region from a side surface of the ridge to the sloped surface of the sloped portion of the electrode. | 12-09-2010 |
Kenji Michiue, Hachioji-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100136267 | THERMAL TRANSFER IMAGE RECEIVING SHEET AND PRODUCTION METHOD OF THE SAME - A thermal transfer image receiving sheet containing a substrate having thereon a thermal insulation layer, an intermediate layer and an image receiving layer in that order, wherein the thermal insulation layer, the image receiving layer and the intermediate layer each is formed by an aqueous coating method. | 06-03-2010 |
Kenji Michiue, Ichihara-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100267908 | Catalyst for olefin polymerization, process for producing olefin polymer, olefin copolymer, novel transition metal compound, and process for producing transition metal compound - [Task] To provide a catalyst for olefin polymerization having an excellent olefin polymerization performance and capable of producing a polyolefin with excellent properties. | 10-21-2010 |
Kenji Michiue, Chiba JP
| Patent application number | Description | Published |
|---|---|---|
| 20120059135 | COPOLYMER OF OLEFIN AND CONJUGATED DIENE, AND PROCESS FOR PRODUCING THE SAME - An object of the invention is to provide copolymers which have a double bond in a side chain and are substantially free of unsaturated bonds in the main chain, copolymers which have a cyclic structure and are substantially free of unsaturated bonds in the main chain, and processes for economically synthesizing these copolymers. | 03-08-2012 |
Yoko Michiue, Kyoto-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090155125 | MICROCHIP - A microchip is provided which includes a fluid circuit in which a first substrate having a groove provided on the surface of the substrate and a second substrate are bonded together. The fluid circuit includes at least a measuring portion for measuring the liquid and a flow path connected to one end of the measuring portion. The cross section of the measuring portion at the connecting position of the flow path and the measuring portion is shorter in length in the thickness direction of the microchip than the cross section of the flow path at the connecting position of the flow path and the measuring portion. | 06-18-2009 |
Yuichi Michiue, Tsukuba-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20120119234 | PHOSPHOR, METHOD OF MANUFACTURING THE SAME, AND LIGHT-EMITTING DEVICE - The present invention is a phosphor expressed by the general formula (A | 05-17-2012 |