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Michiru
Michiru Hirose, Kasugai-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080206949 | APPARATUS FOR FORMING CONDUCTOR, METHOD FOR FORMING CONDUCTOR, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A conductor forming apparatus includes a reaction container having housed therein a processing target on a surface of which a recess in which a conductor is to be provided is formed, and a process for providing the conductor in the recess being carried out inside the container after a supercritical fluid dissolved with a metal compound is supplied into the container, a supply device which supplies the fluid from an outside to the inside of the container, and a discharge device which discharges the fluid that is not submitted for the process from the inside to the outside of the container, wherein while an amount of the fluid in the container is adjusted by continuously supplying the fluid into the container by the supply device and continuously discharging the fluid that is not submitted for the process to the outside of the container by the discharge device. | 08-28-2008 |
| 20080233705 | METHOD FOR SELECTIVELY FORMING ELECTRIC CONDUCTOR AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for selectively forming an electric conductor, the method including disposing a processing target and a metal compound in an atmosphere including a supercritical fluid, the processing target having formed thereon at least one recess for providing an electric conductor, the metal compound including a metal serving as a main component of the electric conductor, and dissolving at least part of the metal compound in the supercritical fluid, selectively introducing the metal compound dissolved in the supercritical fluid into the recess in contact with a surface of the processing target, and coagulating in the recess the metal compound introduced into the recess to precipitate the metal from the metal compound, and coagulating the metal precipitated in the recess, thereby providing the electric conductor in the recess. | 09-25-2008 |
| 20100112776 | APPARATUS FOR FORMING CONDUCTOR, METHOD FOR FORMING CONDUCTOR, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A conductor forming apparatus includes a reaction container having housed therein a processing target on a surface of which a recess in which a conductor is to be provided is formed, and a process for providing the conductor in the recess being carried out inside the container after a supercritical fluid dissolved with a metal compound is supplied into the container, a supply device which supplies the fluid from an outside to the inside of the container, and a discharge device which discharges the fluid that is not submitted for the process from the inside to the outside of the container, wherein while an amount of the fluid in the container is adjusted by continuously supplying the fluid into the container by the supply device and continuously discharging the fluid that is not submitted for the process to the outside of the container by the discharge device. | 05-06-2010 |
Michiru Hogyoku, Kanagawa-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20110228610 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND A PROGRAMMING METHOD THEREOF - A non-volatile semiconductor memory device according to one aspect of an embodiment of the present invention includes: a semiconductor substrate; an element region; a plurality of memory cell transistors which each include a control gate electrode; and programming means for programming data to a programming target memory cell transistor by applying a programming voltage to the programming target memory cell transistor. Moreover, the programming means applies a programming voltage incremented stepwise from an initial programming voltage, to the programming target memory cell transistor while applying a constant initial intermediate voltage to memory cell transistors adjacent to the programming target memory cell transistor. Thereafter, the programming means applies an intermediate voltage incremented stepwise from the initial intermediate voltage, to one of the respective memory cells adjacent to the programming target memory cell transistor, while applying a constant final programming voltage to the programming target memory cell transistor. | 09-22-2011 |
Michiru Hogyoku, Kamakura-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100329026 | SEMICONDUCTOR MEMORY DEVICE WITH CHARGE ACCUMULATION LAYER - According to one embodiment, a semiconductor memory device includes memory cells, first and second selection transistors, a source line, a temperature monitor, and a source line voltage controller. The memory cells are connected in series between a source of the first selection transistor and a drain of the second selection transistor. The temperature monitor monitors a temperature of the semiconductor substrate. The source line voltage controller applies a voltage to the source line, in a read operation, in such a manner that a potential difference between the source line and the semiconductor substrate increases according to a rise in the temperature monitored by the temperature monitor and that a reverse bias is applied between the source of the second selection transistor and the semiconductor substrate. | 12-30-2010 |
Michiru Kubata, Osaka JP
| Patent application number | Description | Published |
|---|---|---|
| 20120045680 | REDOX FLOW BATTERY - A redox flow battery having a high electromotive force and capable of suppressing generation of a precipitation is provided. In a redox flow battery | 02-23-2012 |
Michiru Sakamoto, Nagoya-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100039692 | SWITCHABLE MIRROR ELEMENT, AND SWITCHABLE MIRROR COMPONENT AND INSULATING GLASS EACH INCORPORATING THE SWITCHABLE MIRROR ELEMENT - A switchable mirror element includes a switchable layer having a chromic property enabling the switchable layer to be reversibly changed from a transparent state by hydrogenation and a mirror state by dehydrogenation, and a catalytic layer disposed on the switchable layer and configured to promote hydrogenation or dehydrogenation in the switchable layer. The switchable layer includes an alloy of one or more metals from calcium, strontium, and barium, and magnesium. | 02-18-2010 |
Michiru Sakamoto, Aichi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100196726 | MAGNESIUM ALLOY MATERIAL, AND METHOD FOR TREATMENT OF SURFACE OF MAGNESIUM ALLOY MATERIAL - A magnesium alloy material contains a complex made from a phosphate-containing magnesium, such as dittmarite and the like, and magnesium hydroxide, the complex being formed by a steam curing of the magnesium alloy material conducted using (i) at least one compound chosen among diammonium hydrogen phosphate, ammonium dihydrogen phosphate, and triammonium phosphate, and (ii) water. In this way, it is possible to provide a magnesium alloy material having excellent corrosion resistance, shock resistance and the like, and to provide a method for treatment of surface of magnesium alloy material allowing the manufacture of a magnesium alloy material having excellent corrosion resistance, shock resistance and the like. | 08-05-2010 |
Michiru Tanaka, Osaka JP
| Patent application number | Description | Published |
|---|---|---|
| 20100033899 | ELECTRICAL DOUBLE LAYER CAPACITOR - The present invention provides an electrical double layer capacity comprising a non-aqueous electrolytic solution comprising (A) a solvent comprising a specific fluorine-containing cyclic carbonate and (B) an electrolyte salt comprising a cyclic quaternary onium salt comprising cyclic quaternary onium cation and PF | 02-11-2010 |
Michiru Tanaka, Settsu-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090305144 | ELECTROCHEMICAL DEVICE - There is provided an electrochemical device provided with an electrolytic solution comprising (I) a solvent for dissolving an electrolyte salt comprising (A) a fluorine-containing ether represented by the formula (1): | 12-10-2009 |
| 20100062344 | NON-AQUEOUS ELECTROLYTIC SOLUTION - There is provided a non-aqueous electrolytic solution comprising an electrolyte salt, a specific fluorine-containing solvent and a fluorine-containing cyclic carbonate represented by the formula (A1): | 03-11-2010 |
| 20110008681 | ELECTROLYTIC SOLUTION - There is provided an electrolytic solution causing no phase separation even at low temperatures, being excellent in flame retardancy and noncombustibility, assuring high solubility of an electrolyte salt, having a high discharge capacity, being excellent in charge-discharge cycle characteristics and being suitable for electrochemical devices such as lithium ion secondary batteries. The electrolytic solution comprises a solvent (I) for dissolving an electrolyte salt comprising a fluorine-containing ether (A) represented by the formula: Rf | 01-13-2011 |
Michiru Ueda, Kashiba-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080264528 | ROLLING, SLIDING PART AND PROCESS FOR PRODUCING SAME - A rolling, sliding part is made from a bearing steel, and the rolling, sliding surface thereof has a surface layer portion which is 56 to 64 in Rockwell C hardness, up to 12 vol. % in retained austenite content and 4 to 6 degrees in the X-ray half value width of martensite. Even if made from a common bearing steel, the rolling, sliding part is reduced in the likelihood of developing a WEA or like fatigue structure, consequently exhibiting a prolonged rolling, sliding life for use under severe conditions involving a high temperature, high speed, high load or high vibration. | 10-30-2008 |