| Patent application number | Description | Published |
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| 20090120787 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A barrier film of a semiconductor device is formed. The present invention forms a middle layer having copper as a main component and including a predetermined quantity of diffusible metal with the addition of a reaction gas, by sputtering an alloy target having copper as a main component with the addition of a diffusible metal, while supplying a reaction gas including oxygen or nitrogen. Since contents of the diffusible metal are accurately controlled when heating the middle layer, the barrier film is certainly formed. Additionally, the reaction gas is added to the middle layer so that the reactivity of the diffusible metal becomes high; and accordingly, it is possible to form the barrier film at a heating temperature lower than the conventional art. | 05-14-2009 |
| 20100068880 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS - A method for manufacturing a semiconductor device that improves the reliability of a metal cap layer and productivity. The method includes an insulation layer step of superimposing an insulation layer ( | 03-18-2010 |
| 20100089533 | ASHING APPARATUS - Disclosed is an ashing apparatus wherein decrease in processing efficiency is suppressed. Specifically, a shower plate is arranged to face a substrate stage on which a substrate is placed, and diffuses oxygen radicals supplied into a chamber. A metal blocking plate is arranged between the shower plate and the substrate stage and has a through hole through which oxygen radicals pass. In addition, the metal blocking plate has a first layer, which is made of a metal same as the one exposed in the substrate, on the surface facing the substrate. | 04-15-2010 |
| 20100317189 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Disclosed is a method for manufacturing a semiconductor device which is decreased in resistance of a copper wiring containing a ruthenium-containing film and a copper-containing film, thereby having improved reliability. Also disclosed is an apparatus for manufacturing a semiconductor device. Specifically, an Ru film is formed on a substrate having a recessed portion by a CVD method using a raw material containing an organic ruthenium complex represented by the general formula and a reducing gas (step S | 12-16-2010 |
| Patent application number | Description | Published |
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| 20090238968 | Method for Producing Component for Vacuum Apparatus, Resin Coating Forming Apparatus and Vacuum Film Forming System - The object of this invention is to provide a method for producing a component for vacuum apparatus and a resin coating forming apparatus capable of easily forming a resin coating on an internal flow path complex in shape. | 09-24-2009 |
| 20090314636 | CAPACITIVE-COUPLED MAGNETIC NEUTRAL LOOP PLASMA SPUTTERING SYSTEM - A capacitive-coupled magnetic neutral line plasma sputtering system having such a structure that the utilization efficiency of a target can be increased drastically by sputtering the target uniformly, distribution of magnetic lines of force is vertical and uniform in the vicinity of the substrate, and charge up does not take place. The capacitive-coupled magnetic neutral line plasma sputtering system comprises a vacuum chamber ( | 12-24-2009 |
| 20100068891 | METHOD OF FORMING BARRIER FILM - A barrier film made of a ZrB | 03-18-2010 |
| 20100180819 | FILM-FORMING APPARATUS - In a film-forming apparatus in which two or more gases are used, a uniform film is formed. In a film-forming apparatus provided with a film-forming chamber and a shower head, the shower head is provided with a material gas diffusion chamber and a reactive gas diffusion chamber. A gas passage which communicates the material gas diffusion chamber and a material gas introduction pipe is constituted into multi-stages of one stage or more. Each stage has a gas passage represented by 2n-1 (where n is the number of stages). The first-stage gas passage has connected to the center thereof the material gas introduction pipe. Each of second-stage and subsequent-stage gas passages has connected to the center thereof connection holes which are provided on both ends of the previous-stage gas passages so as to be in communication with the previous-stage gas passages. Each of the final-stage gas passages is connected to the material gas diffusion chamber by connection holes formed on both ends of each of the gas passages. | 07-22-2010 |
| 20100270654 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, DRY-ETCHING PROCESS, METHOD FOR MAKING ELECTRICAL CONNECTIONS, AND ETCHING APPARATUS - A method for manufacturing a semiconductor device comprises dry-etching a thin film using a resist mask carrying patterns in which at least one of the width of each pattern and the space between neighboring two patterns ranges from 32 to 130 nm using a halogenated carbon-containing compound gas with the halogen being at least two members selected from the group consisting of F, I and Br. The ratio of at least one of I and Br is not more than 26% of the total amount of the halogen atoms as expressed in terms of the atomic compositional ratio to transfer the patterns onto the thin film. Such etching of a thin film avoids causing damage to the resist mask used. The resulting thin film carrying the transferred patterns is used as a mask for subjecting the underlying material to dry-etching. | 10-28-2010 |
