Patent application number | Description | Published |
20100207212 | METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCED BY SAME METHOD - To prevent bubbles from occurring along a transfer interface, the present method includes the steps of: forming a peeled layer | 08-19-2010 |
20100270618 | PRODUCTION METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - The present invention provides a production method of a semiconductor device, capable of improving surface flatness of a semiconductor chip formed on a semiconductor substrate and thereby suppressing a variation in electrical characteristics of the semiconductor chip transferred onto a substrate with an insulating surface, and further capable of improving production yield. The present invention provides a production method of a semiconductor device including a semiconductor chip on a substrate with an insulating surface, the semiconductor chip having a conductive pattern film,
| 10-28-2010 |
20100270658 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - A method is disclosed for producing a semiconductor device produced by (i) doping hydrogen ions or rare gas ions into a device substrate in which a transfer layer ( | 10-28-2010 |
20100283103 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE AND DISPLAY APPARATUS - A method for manufacturing a semiconductor device includes: a first step of forming a base layer, which includes an element portion having a gate electrode and a flat interlayer insulating film formed so as to cover the gate electrode; a second step of ion implanting a delamination material into the base layer to form a delamination layer; a third step of bonding the base layer to a substrate; and a fourth step of separating and removing a part of the base layer along the delamination layer. An implantation depth of the delamination material in the gate electrode is substantially the same as that of the delamination material in the interlayer insulating film. | 11-11-2010 |
20110042693 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device ( | 02-24-2011 |
20110241174 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - Provided is a semiconductor device manufacturing method wherein the following steps are performed; a step of forming at least a part of an element on a base body layer, a step of forming a peeling layer, a step of forming a planarizing film; a step of forming a die by separating the base body layer at a separating region; a step of bonding the die to a substrate by bonding the die on the planarizing film; and a step of peeling and removing a part of the base body layer along the peeling layer. Prior to the step of forming the die, a step of forming a groove opened on the surface of the planarizing film such that at least a part of the separating region is included on the bottom surface of the groove, and forming the die such that the die has a polygonal outer shape wherein all the internal angles are obtuse by forming the groove is performed. | 10-06-2011 |
20110272694 | INSULATING SUBSTRATE FOR SEMICONDUCTOR APPARATUS, SEMICONDUCTOR APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR APPARATUS - The present invention is intended to provide a glass substrate ( | 11-10-2011 |
20120038022 | INSULATING SUBSTRATE FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - Disclosed is a glass substrate ( | 02-16-2012 |
20120104406 | THIN-FILM TRANSISTOR, DISPLAY DEVICE, AND MANUFACTURING METHOD FOR THIN-FILM TRANSISTORS - Disclosed is a high-quality, efficiently manufacturable thin film transistor in which leakage current is minimized. The thin film transistor is provided with a semiconductor layer ( | 05-03-2012 |
20130105802 | THIN FILM TRANSISTOR, DISPLAY DEVICE, AND MANUFACTURING METHOD FOR THIN FILM TRANSISTOR AND DISPLAY DEVICE | 05-02-2013 |
Patent application number | Description | Published |
20100155905 | SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD - A device portion forming step includes an assisting layer forming step of forming a planarization assisting layer, which covers a plurality of conductive films, over a first planarizing layer before forming a second planarizing layer. In the assisting layer forming step, the planarization assisting layer is formed so that a height of the planarization assisting layer from a surface of the first planarizing layer located on a side opposite to the substrate layer becomes equal between at least a part of a region where the conductive films are formed, and at least a part of a region where no conductive film is formed. | 06-24-2010 |
20100244136 | SEMICONDUCTOR DEVICE, SINGLE-CRYSTAL SEMICONDUCTOR THIN FILM-INCLUDING SUBSTRATE, AND PRODUCTION METHODS THEREOF - The present invention provides a semiconductor device, a single-crystal semiconductor thin film-including substrate, and production methods thereof, each allowing single-crystal semiconductor thin film-including single-crystal semiconductor elements produced by being transferred onto a low heat resistant insulating substrate to have enhanced transistor characteristics and a reduced wiring resistance. | 09-30-2010 |
20100283104 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An element portion forming step includes an insulating film forming step of forming an insulating film on a surface of a base layer, a conductive layer forming step of uniformly forming a conductive layer on a surface of the insulating film, and an electrode forming step of patterning the conductive layer to form an electrode. A delamination layer forming step of ion implanting a delamination material into the base layer to form a delamination layer is performed before the electrode forming step. | 11-11-2010 |
20100295105 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor device includes: an element portion formation step of forming an element portion on a base layer; a delaminating layer formation step of forming a delaminating layer in the base layer; a bonding step of bonding the base layer having the element portion to a substrate; and a separation step of separating and removing a portion of the base layer in the depth direction along the delaminating layer by heating the base layer bonded to the substrate. The method further includes, after the separation step, an ion implantation step of ion-implanting a p-type impurity element in the base layer for adjusting the impurity concentration of a p-type region of the element. | 11-25-2010 |
20120091452 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR ARRAY SUBSTRATE AND PRODUCTION METHOD THEREOF, AND DISPLAY DEVICE - The present invention provides an oxide semiconductor capable of achieving a thin film transistor having stable transistor characteristics, a thin film transistor having a channel layer formed of the oxide semiconductor and a production method thereof, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor. The oxide semiconductor includes indium, gallium, zinc, and oxygen as constituent atoms, and the oxygen content of the oxide semiconductor is 87% to 95% of the stoichiometric condition set as 100%, in terms of atomic units. | 04-19-2012 |
20120138923 | THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, ACTIVE MATRIX SUBSTRATE, DISPLAY PANEL AND DISPLAY DEVICE - The present invention provides a thin film transistor including an oxide semiconductor layer ( | 06-07-2012 |
20120218485 | ACTIVE MATRIX SUBSTRATE AND LIQUID CRYSTAL DISPLAY PANEL INCLUDING THE SAME, AND METHOD FOR MANUFACTURING ACTIVE MATRIX SUBSTRATE - An active matrix substrate includes a plurality of pixels arranged in a matrix, a plurality of capacitor lines ( | 08-30-2012 |
20120228621 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE - An object of this invention is to provide a semiconductor device in which TFTs with high mobility are arranged in both of display and peripheral circuit areas. A semiconductor device fabricating method according to the present invention includes the steps of: irradiating an amorphous silicon layer ( | 09-13-2012 |
20120241750 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - A semiconductor device includes: a thin film transistor having a gate line ( | 09-27-2012 |
20130023086 | ACTIVE MATRIX SUBSTRATE, DISPLAY PANEL PROVIDED WITH SAME, AND METHOD FOR MANUFACTURING ACTIVE MATRIX SUBSTRATE - An active matrix substrate includes a plurality of pixel electrodes (P) provided in a matrix, and a plurality of TFTs ( | 01-24-2013 |
20130026462 | METHOD FOR MANUFACTURING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR MANUFACTURED BY THE SAME, AND ACTIVE MATRIX SUBSTRATE - A method for manufacturing a thin film transistor includes the step of forming a gate electrode ( | 01-31-2013 |
20130092923 | ACTIVE MATRIX SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - An active matrix substrate includes a plurality of pixel electrodes ( | 04-18-2013 |
20130099227 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE - The present invention provides an oxide semiconductor capable of achieving a thin film transistor with excellent electric property, a thin film transistor having a channel layer formed of the oxide semiconductor, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, and includes Al, In, Zn, and O as constituent atoms. | 04-25-2013 |
20130105788 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE | 05-02-2013 |
20130134411 | SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCTION OF SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE - A semiconductor device ( | 05-30-2013 |
20130140552 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE - A semiconductor device ( | 06-06-2013 |
20130175521 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF | 07-11-2013 |
20130193430 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE - The present invention provides an oxide semiconductor that realizes a TFT excellent in electric properties and process resistance, a TFT comprising a channel layer formed of the oxide semiconductor, and a display device equipped with the TFT. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, wherein the oxide semiconductor contains Ga (gallium), In (indium), Zn (zinc), and O (oxygen) as constituent atoms, and the oxide semiconductor has Zn atomic composition satisfying the equation of 0.01≦Zn/(In+Zn)≦0.22. | 08-01-2013 |
20140367683 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR ARRAY SUBSTRATE AND PRODUCTION METHOD THEREOF, AND DISPLAY DEVICE - The present invention provides an oxide semiconductor capable of achieving a thin film transistor having stable transistor characteristics, a thin film transistor having a channel layer formed of the oxide semiconductor and a production method thereof, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor. The oxide semiconductor includes indium, gallium, zinc, and oxygen as constituent atoms, and the oxygen content of the oxide semiconductor is 87% to 95% of the stoichiometric condition set as 100%, in terms of atomic units. | 12-18-2014 |
Patent application number | Description | Published |
20090001504 | Method for Transferring Semiconductor Element, Method for Manufacturing Semiconductor Device, and Semiconductor Device - A transistor formed on a monocrystalline Si wafer is temporarily transferred onto a first temporary supporting substrate. The first temporarily supporting substrate is heat-treated at high heat so as to repair crystal defects generated in a transistor channel of the monocrystalline Si wafer when transferring the transistor. The transistor is then made into a chip and transferred onto a TFT substrate. In order to transfer the transistor which has been once separated from the monocrystalline Si wafer, a different method from a stripping method utilizing ion doping is employed. | 01-01-2009 |
20100059892 | PRODUCTION METHOD OF SEMICONDUCTOR DEVICE, PRODUCTION METHOD OF DISPLAY DEVICE, SEMICONDUCTOR DEVICE, PRODUCTION METHOD OF SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR ELEMENT - The present invention provides a production method of a semiconductor device, a production method of a display device, a semiconductor device, a production method of a semiconductor element, and a semiconductor element, each capable of providing a lower-resistance semiconductor element which is more finely prepared through more simple steps. The production method of the semiconductor device of the present invention is a production method of a semiconductor device including a semiconductor element on a substrate, wherein the production method includes a metal silicide-forming step of: transferring the semiconductor element onto the substrate, the semiconductor element having a multilayer structure of a silicon layer and a metal layer, and by heating, forming metal silicide from silicon for a metal layer-side part of the silicon layer and metal for a silicon layer-side part of the metal layer. | 03-11-2010 |
20100148261 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - A method of the present invention includes a first planarization film formation step of forming, in at least part of a flat portion of the second regions, a first planarization film so as to have a uniform thickness; a second planarization film formation step of forming a second planarization film between the first planarization films to be coplanar with a surface of the first planarization film; a peeling layer formation step of forming a peeling layer by ion implantation of a peeling material into the base layer via the first planarization film or the second planarization film; and a separation step of separating part of the base layer along the peeling layer. | 06-17-2010 |