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Michiko Takei
Michiko Takei, Osaka JP
| Patent application number | Description | Published |
|---|---|---|
| 20100207212 | METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCED BY SAME METHOD - To prevent bubbles from occurring along a transfer interface, the present method includes the steps of: forming a peeled layer | 08-19-2010 |
| 20100270618 | PRODUCTION METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - The present invention provides a production method of a semiconductor device, capable of improving surface flatness of a semiconductor chip formed on a semiconductor substrate and thereby suppressing a variation in electrical characteristics of the semiconductor chip transferred onto a substrate with an insulating surface, and further capable of improving production yield. The present invention provides a production method of a semiconductor device including a semiconductor chip on a substrate with an insulating surface, the semiconductor chip having a conductive pattern film, | 10-28-2010 |
| 20100270658 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - A method is disclosed for producing a semiconductor device produced by (i) doping hydrogen ions or rare gas ions into a device substrate in which a transfer layer ( | 10-28-2010 |
| 20100283103 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE AND DISPLAY APPARATUS - A method for manufacturing a semiconductor device includes: a first step of forming a base layer, which includes an element portion having a gate electrode and a flat interlayer insulating film formed so as to cover the gate electrode; a second step of ion implanting a delamination material into the base layer to form a delamination layer; a third step of bonding the base layer to a substrate; and a fourth step of separating and removing a part of the base layer along the delamination layer. An implantation depth of the delamination material in the gate electrode is substantially the same as that of the delamination material in the interlayer insulating film. | 11-11-2010 |
| 20110042693 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device ( | 02-24-2011 |
Michiko Takei, Osaka-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100155905 | SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD - A device portion forming step includes an assisting layer forming step of forming a planarization assisting layer, which covers a plurality of conductive films, over a first planarizing layer before forming a second planarizing layer. In the assisting layer forming step, the planarization assisting layer is formed so that a height of the planarization assisting layer from a surface of the first planarizing layer located on a side opposite to the substrate layer becomes equal between at least a part of a region where the conductive films are formed, and at least a part of a region where no conductive film is formed. | 06-24-2010 |
| 20100244136 | SEMICONDUCTOR DEVICE, SINGLE-CRYSTAL SEMICONDUCTOR THIN FILM-INCLUDING SUBSTRATE, AND PRODUCTION METHODS THEREOF - The present invention provides a semiconductor device, a single-crystal semiconductor thin film-including substrate, and production methods thereof, each allowing single-crystal semiconductor thin film-including single-crystal semiconductor elements produced by being transferred onto a low heat resistant insulating substrate to have enhanced transistor characteristics and a reduced wiring resistance. | 09-30-2010 |
| 20100283104 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An element portion forming step includes an insulating film forming step of forming an insulating film on a surface of a base layer, a conductive layer forming step of uniformly forming a conductive layer on a surface of the insulating film, and an electrode forming step of patterning the conductive layer to form an electrode. A delamination layer forming step of ion implanting a delamination material into the base layer to form a delamination layer is performed before the electrode forming step. | 11-11-2010 |
| 20100295105 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor device includes: an element portion formation step of forming an element portion on a base layer; a delaminating layer formation step of forming a delaminating layer in the base layer; a bonding step of bonding the base layer having the element portion to a substrate; and a separation step of separating and removing a portion of the base layer in the depth direction along the delaminating layer by heating the base layer bonded to the substrate. The method further includes, after the separation step, an ion implantation step of ion-implanting a p-type impurity element in the base layer for adjusting the impurity concentration of a p-type region of the element. | 11-25-2010 |
Michiko Takei, Nara JP
| Patent application number | Description | Published |
|---|---|---|
| 20090001504 | Method for Transferring Semiconductor Element, Method for Manufacturing Semiconductor Device, and Semiconductor Device - A transistor formed on a monocrystalline Si wafer is temporarily transferred onto a first temporary supporting substrate. The first temporarily supporting substrate is heat-treated at high heat so as to repair crystal defects generated in a transistor channel of the monocrystalline Si wafer when transferring the transistor. The transistor is then made into a chip and transferred onto a TFT substrate. In order to transfer the transistor which has been once separated from the monocrystalline Si wafer, a different method from a stripping method utilizing ion doping is employed. | 01-01-2009 |
| 20100059892 | PRODUCTION METHOD OF SEMICONDUCTOR DEVICE, PRODUCTION METHOD OF DISPLAY DEVICE, SEMICONDUCTOR DEVICE, PRODUCTION METHOD OF SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR ELEMENT - The present invention provides a production method of a semiconductor device, a production method of a display device, a semiconductor device, a production method of a semiconductor element, and a semiconductor element, each capable of providing a lower-resistance semiconductor element which is more finely prepared through more simple steps. The production method of the semiconductor device of the present invention is a production method of a semiconductor device including a semiconductor element on a substrate, wherein the production method includes a metal silicide-forming step of: transferring the semiconductor element onto the substrate, the semiconductor element having a multilayer structure of a silicon layer and a metal layer, and by heating, forming metal silicide from silicon for a metal layer-side part of the silicon layer and metal for a silicon layer-side part of the metal layer. | 03-11-2010 |
| 20100148261 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - A method of the present invention includes a first planarization film formation step of forming, in at least part of a flat portion of the second regions, a first planarization film so as to have a uniform thickness; a second planarization film formation step of forming a second planarization film between the first planarization films to be coplanar with a surface of the first planarization film; a peeling layer formation step of forming a peeling layer by ion implantation of a peeling material into the base layer via the first planarization film or the second planarization film; and a separation step of separating part of the base layer along the peeling layer. | 06-17-2010 |
Michiko Takei, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20110175818 | MOBILE ELECTRONIC DEVICE - Provided is a mobile electronic device capable of reflecting a user's intention. While an initial screen ( | 07-21-2011 |
Michiko Takei, Yokohama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20110175917 | MOBILE DISPLAY DEVICE AND CONTROL METHOD IN MOBILE DISPLAY DEVICE - It is possible to provide a mobile display device which can improve usability even when the character size is increased for improving visibility. A method for controlling the mobile display device is also disclosed. A control unit ( | 07-21-2011 |