Patent application number | Description | Published |
20110278991 | PIEZOELECTRIC POWER GENERATING ELEMENT, AND METHOD OF GENERATING ELECTRIC POWER USING THE PIEZOELECTRIC POWER GENERATING ELEMENT - Provided is a relatively easy-to-fabricate piezoelectric power generating element capable of generating a large amount of electric power while comprising a bridge-type vibration beam that is resistant to damage from external vibration. This element comprises a support member, a strip-shaped vibration beam, a piezoelectric layer, and electrodes. The first and second ends of the vibration beam are fixed to the support member. The piezoelectric layer and the electrodes are provided on the surface of the vibration beam. The vibration beam extends in a plane when it is not vibrating. The vibration beam has a first portion that extends from the first end fixed to the support member, a second portion that extends from the second end fixed to the support member, and a third portion that connects the end of the first portion opposite to the first end and the end of the second portion opposite to the second end. The vibration beam has a shape such that, when viewed in a direction perpendicular to the plane, a first direction in which the first portion extends is a direction closer to the second end, and a second direction in which the second portion extends is a direction closer to the first end, the first and second directions each make an angle of more than 0° and less than 90° with respect to a straight line connecting the center of the first end and the center of the second end, and the third portion intersects once the straight line. | 11-17-2011 |
20110299566 | PYROELECTRIC TEMPERATURE SENSOR AND A METHOD FOR MEASURING A TEMPERATURE WITH THE PYROELECTRIC TEMPERATURE SENSOR - A temperature sensor includes first and second lower electrodes, a ferroelectric layer having polarization, a semiconductor layer; and first to third upper electrodes. The second upper electrode is interposed between the first upper electrode and the third upper electrode in a plan view. The semiconductor layer includes a first channel disposed between the first upper electrode and the second upper electrode, and a second channel disposed between the second upper electrode and the third upper electrode. The ferroelectric layer includes a first ferroelectric part disposed below the first channel and a second ferroelectric part disposed below the second channel. A polarization direction of the first ferroelectric part is opposite to a polarization direction of the second first ferroelectric part. The temperature is calculated based on the output voltage from the second upper electrode and the voltage applied to the first upper electrode. | 12-08-2011 |
20110310650 | SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF OPERATING THEREOF - In the operating method of the semiconductor memory device, (1) voltages V | 12-22-2011 |
20120043857 | ACTUATOR AND METHOD FOR DRIVING ACTUATOR - The purpose of the present invention is to provide a method for driving an actuator in which unnecessary deformation is suppressed. | 02-23-2012 |
20130009713 | RESISTANCE-CAPACITANCE OSCILLATION CIRCUIT - A resistance-capacitance oscillation circuit comprises an amplifier and a phase shifting circuit. The phase shifting circuit comprises at least three resistance-capacitance circuit elements, which comprise a resistance and a capacitance. At least one of the resistance-capacitance circuit elements comprises a variable resistance and a variable capacitance. The variable resistance is formed of a first electrode, a second electrode, a part of a semiconductor film, a part of a ferroelectric film, and a fourth electrode. The variable capacitor is formed of the second electrode, a third electrode, a fifth electrode, another part of the ferroelectric film, another part of the semiconductor film, and a paraelectric film. | 01-10-2013 |
20130009714 | RESISTANCE-CAPACITANCE OSCILLATION CIRCUIT - A resistance-capacitance oscillation circuit comprises an amplifier and a phase shifting circuit. The phase shifting circuit comprises at least three resistance-capacitance circuit elements, each of which comprises a resistance and a capacitor. At least one of the resistance-capacitance circuit elements comprises a variable resistance and a variable capacitor. The variable resistance is formed of a first electrode, a second electrode, a part of a semiconductor film, a part of a ferroelectric film, and a fourth electrode. The variable capacitor is formed of the second electrode, a third electrode, a fifth electrode, another part of the ferroelectric film, another part of the semiconductor film, and a paraelectric film. | 01-10-2013 |
20130311414 | LEARNING METHOD OF NEURAL NETWORK CIRCUIT - A neuron circuit in a neural network circuit element includes a waveform generating circuit for generating a predetermined pulse voltage, and a first input signal has a waveform of the predetermined pulse voltage. For a period having a predetermined duration of the predetermined pulse voltage generated within the neural network circuit element including the variable resistance element which is applied with the first input signal from another neural network circuit element, the first input signal is permitted to be input to the control electrode of the variable resistance element, to change the resistance value of the variable resistance element due to an electric potential difference generated between the first electrode and the control electrode which occurs depending on an input timing of the first input signal with respect to the period during which the first input signal is permitted to be input to the control electrode. | 11-21-2013 |
20130311415 | LEARNING METHOD OF NEURAL NETWORK CIRCUIT - A neuron circuit in a neural network circuit element includes a waveform generating circuit for generating a bipolar sawtooth pulse voltage, and a first input signal has a bipolar sawtooth pulse waveform. For a period during which the first input signal is permitted to be input to a first electrode of a variable resistance element, the bipolar sawtooth pulse voltage generated within the neural network circuit element including the variable resistance element which is applied with the first input signal from another neural network circuit element is input to a control electrode of the variable resistance element. The resistance value of the variable resistance element changes due to an electric potential difference between the first electrode and the control electrode, the electric potential difference being generated depending on an input timing difference between a voltage applied to the first electrode and the voltage applied to the control electrode. | 11-21-2013 |
20130320806 | ACTUATOR AND METHOD FOR DRIVING THE SAME - Provided is a novel actuator and a method for driving the same. The present invention is an actuator comprising a first laminate comprising a first (Bi, Na, Ba) TiO | 12-05-2013 |