| Patent application number | Description | Published |
|---|
| 20080258142 | Semiconductor device, its manufacture method and template substrate - The semiconductor device has: a ZnO-containing substrate containing Li; a zinc silicate layer formed above the ZnO-containing substrate; and a semiconductor layer epitaxially grown relative to the ZnO-containing substrate via the zinc silicate layer. | 10-23-2008 |
| 20090008660 | ZnO-CONTAINING SEMICONDUCTOR LAYER AND ZnO-CONTAINING SEMICONDUCTOR LIGHT EMITTING DEVICE - A ZnO-containing semiconductor layer contains Se or S added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted. | 01-08-2009 |
| 20090061559 | MANUFACTURE METHOD FOR ZnO-CONTAINING COMPOUND SEMICONDUCTOR LAYER - A manufacture method for a ZnO-containing compound semiconductor layer has the steps of: (a) preparing a substrate; and (b) growing a ZnO-containing semiconductor layer above the substrate by supplying at the same time at least Zn and O as source gases and S as surfactant. There is provided the manufacture method for the ZnO-containing compound semiconductor layer with improved flatness. | 03-05-2009 |
| 20090206333 | ZnO BASED SEMICONDUCTOR DEVICE AND ITS MANUFACTURE METHOD - A ZnO based semiconductor device includes: a lamination structure including a first semiconductor layer containing ZnO based semiconductor of a first conductivity type and a second semiconductor layer containing ZnO based semiconductor of a second conductivity type opposite to the first conductivity type, formed above the first semiconductor layer and forming a pn junction together with the first semiconductor layer; and a Zn—Si—O layer containing compound of Zn, Si and O and covering a surface exposing the pn junction of the lamination structure. | 08-20-2009 |
| 20090236598 | ZnO LAYER AND SEMICONDUCTOR LIGHT EMITTING DEVICE - A ZnO layer is provided which can obtain emission at a wavelength longer than blue (e.g., 420 nm) and has a novel structure. A transition energy narrower by 0.6 eV or larger than a band gap of ZnO can be obtained by doping S into a ZnO layer. | 09-24-2009 |
| 20090272972 | ZnO BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND ITS MANUFACTURE METHOD - A ZnO based semiconductor light emitting device includes: a first semiconductor layer containing ZnO | 11-05-2009 |
| 20090294758 | ZnO-CONTAINING SEMICONDUCTOR LAYER, ITS MANUFACTURE METHOD, AND SEMICONDUCTOR LIGHT EMITTING DEVICE - A ZnO-containing semiconductor layer, doped with Se, has an emission peak wavelength in visual light and has a band gap equivalent to a band gap of ZnO. | 12-03-2009 |
| 20110073857 | SEMICONDUCTOR DEVICE, ITS MANUFACTURE METHOD AND TEMPLATE SUBSTRATE - A semiconductor device includes a ZnO-containing substrate containing Li, a zinc silicate layer formed above the ZnO-containing substrate, and a semiconductor layer epitaxially grown relative to the ZnO-containing substrate via the zinc silicate layer. | 03-31-2011 |
| 20110084275 | ZnO-CONTAINING SEMICONDUCTOR LAYER AND ZnO-CONTAINING SEMICONDUCTOR LIGHT EMITTING DEVICE - A ZnO-containing semiconductor layer contains Se added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or a semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted. | 04-14-2011 |
