Patent application number | Description | Published |
20080280438 | METHODS FOR DEPOSITING TUNGSTEN LAYERS EMPLOYING ATOMIC LAYER DEPOSITION TECHNIQUES - In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process. | 11-13-2008 |
20090111264 | PLASMA-ENHANCED CYCLIC LAYER DEPOSITION PROCESS FOR BARRIER LAYERS - In one embodiment, a method for depositing materials on a substrate is provided which includes forming a titanium nitride barrier layer on the substrate by sequentially exposing the substrate to a titanium precursor containing a titanium organic compound and a nitrogen plasma formed from a mixture of nitrogen gas and hydrogen gas. In another embodiment, the method includes exposing the substrate to the deposition gas containing the titanium organic compound to form a titanium-containing layer on the substrate, and exposing the titanium-containing layer disposed on the substrate to a nitrogen plasma formed from a mixture of nitrogen gas and hydrogen gas. The method further provides depositing a conductive material containing tungsten or copper over the substrate during a vapor deposition process. In some examples, the titanium organic compound may contain methylamido or ethylamido, such as tetrakis(dimethylamido)titanium, tetrakis(diethylamido)titanium, or derivatives thereof. | 04-30-2009 |
20090120799 | MULTIPLE-STEP ELECTRODEPOSITION PROCESS FOR DIRECT COPPER PLATING ON BARRIER METALS - Embodiments of the invention teach a method for depositing a copper seed layer to a substrate surface, generally to a barrier layer. The method includes placing the substrate surface into a copper solution, wherein the copper solution includes complexed copper ions. A current or bias is applied across the substrate surface and the complexed copper ions are reduced to deposit the copper seed layer onto the barrier layer. | 05-14-2009 |
20090126851 | DIE-TO-ROBOT ALIGNMENT FOR DIE-TO-SUBSTRATE BONDING - A method, a system and a computer readable medium having a set of instructions stored thereon for die-to-robot alignment for die-to-substrate bonding are described. First, a robot is aligned with a substrate to provide a pre-aligned robot. Next, a die is aligned with the pre-aligned robot to provide a robot-aligned die. Finally, the robot-aligned die is bonded to a region of the substrate. The substrate is held stationary immediately following the aligning of the robot with the substrate and at least until the robot-aligned die is bonded to the region of the substrate. | 05-21-2009 |
20090130821 | THREE DIMENSIONAL PACKAGING WITH WAFER-LEVEL BONDING AND CHIP-LEVEL REPAIR - A method, a system and a computer readable medium for three dimensional packaging with wafer-level bonding and chip-level repair. A first wafer is provided having a first plurality of chips. A second wafer is provided having a second plurality of chips. At least one chip is removed from the second wafer while retaining the relative alignment of the remaining chips in the second wafer. The first and second wafers are aligned and joined with wafer-to-wafer techniques. Where a bad chip having a relative physical position within the second wafer corresponding to a relative physical position within the first wafer of a good chip is removed, a good chip may be aligned and bonded to the first wafer using die-to-wafer techniques. | 05-21-2009 |
20090162970 | MATERIAL MODIFICATION IN SOLAR CELL FABRICATION WITH ION DOPING - An approach for material modification in solar cell fabrication with ion doping is described. In one embodiment, there is a method of forming a thin-film solar cell. In this embodiment, a substrate is provided and a thin-film layer is deposited on the substrate. The thin-film solar cell layer is exposed to an ion flux to passivate a defect. | 06-25-2009 |
20100311237 | FORMATION OF A TANTALUM-NITRIDE LAYER - A method of forming a material on a substrate is disclosed. In one embodiment, the method includes forming a tantalum nitride layer on a substrate disposed in a plasma process chamber by sequentially exposing the substrate to a tantalum precursor and a nitrogen precursor, followed by reducing a nitrogen concentration of the tantalum nitride layer by exposing the substrate to a plasma annealing process. A metal-containing layer is subsequently deposited on the tantalum nitride layer. | 12-09-2010 |
20110185969 | DUAL HEATING FOR PRECISE WAFER TEMPERATURE CONTROL - An improved method of heating a workpiece positioned on a susceptor is disclosed. The method using both primary heating, such as by resistive or inductive heating elements, and localized secondary heating, such as by heating lamps. The primary heating system is used to globally regulate the temperature of the susceptor. The heating lamps are used to provide localized heating to particular regions of the workpieces, based on measured temperatures. A wafer temperature mapping unit is used to measure the temperature of the top surface of the workpieces, so that an appropriate amount of heat can be applied to each localized region. In some embodiments, the susceptor rotates, thereby allowing fewer localized heating elements and temperature sensors to be employed. | 08-04-2011 |
20120178256 | FORMATION OF A TANTALUM-NITRIDE LAYER - A method of forming a material on a substrate is disclosed. In one embodiment, the method includes forming a tantalum nitride layer on a substrate disposed in a plasma process chamber by sequentially exposing the substrate to a tantalum precursor and a nitrogen precursor, followed by reducing a nitrogen concentration of the tantalum nitride layer by exposing the substrate to a plasma annealing process. A metal-containing layer is subsequently deposited on the tantalum nitride layer. | 07-12-2012 |