Patent application number | Description | Published |
20080251802 | METHOD FOR DEPOSITION OF (Al,In,Ga,B)N - A method for growing an improved quality nitride thin film on a patterned substrate is disclosed, wherein the nitride film is grown at atmospheric pressure. A nitride template is disclosed, comprising a patterned substrate and a one or more nitride layer direct growth off of the patterned substrate, comprising no lateral epitaxial overgrowth regions and a substantially coalesced surface smooth enough for subsequent deposition of light emitting device quality nitride layers onto the surface. A light emitting diode comprising the nitride film is also disclosed. | 10-16-2008 |
20080283854 | LIGHT EMITTING DIODE DEVICE LAYER STRUCTURE USING AN INDIUM GALLIUM NITRIDE CONTACT LAYER - A light emitting diode device layer structure including a p-type contact layer that contains at least some indium (In), wherein the p-type contact layer is a not-intentionally doped strained nitride contact layer. | 11-20-2008 |
20090072262 | (Al,In,Ga,B)N DEVICE STRUCTURES ON A PATTERNED SUBSTRATE - A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of In | 03-19-2009 |
20090184342 | METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (AL,IN,GA,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION - A method for growing a semi-polar nitride semiconductor thin film via metalorganic chemical vapor deposition (MOCVD) on a substrate, wherein a nitride nucleation or buffer layer is grown on the substrate prior to the growth of the semi-polar nitride semiconductor thin film. | 07-23-2009 |
20100148195 | METHOD FOR IMPROVED GROWTH OF SEMIPOLAR (AL,IN,GA,B)N - A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an In | 06-17-2010 |
20100155778 | METHOD FOR ENHANCING GROWTH OF SEMIPOLAR (AL,IN,GA,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION - A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al, In, Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an In | 06-24-2010 |
20100199914 | CHEMICAL VAPOR DEPOSITION REACTOR CHAMBER - A chemical vapor deposition reactor is provided which includes a process chamber accommodating a substrate holder for multiple substrates, and a reactor gas inlet which supplies the reactant gases to a portion above the surface of the heated substrates. The reactant gases can be injected parallel or oblique to the substrates and the angle between the supplied reactant gas flow direction and the tangential component of the susceptor's angular rotation is independent of the susceptor's position. A secondary gas inlet which supplies gases perpendicular or at a sharp angle to the substrates is also included so as to change the boundary layer thickness created when hot gases come into contact with the colder reactant gases flowing parallel or oblique to the surface of the substrates. | 08-12-2010 |
20100219416 | METHOD OF IMPROVING SURFACE MORPHOLOGY OF (GA,AL,IN,B)N THIN FILMS AND DEVICES GROWN ON NONPOLAR OR SEMIPOLAR (GA,AL,IN,B)N SUBSTRATES - A method for improving the growth morphology of (Ga,Al,In,B)N thin films on nonpolar or semipolar (Ga,Al,In,B)N substrates, wherein a (Ga,Al,In,B)N thin film is grown directly on a nonpolar or semipolar (Ga,Al,In,B)N substrate or template and a portion of the carrier gas used during growth is comprised of an inert gas. Nonpolar or semipolar nitride LEDs and diode lasers may be grown on the smooth (Ga,Al,In,B)N thin films grown by the present invention. | 09-02-2010 |
20120074525 | MISCUT SEMIPOLAR OPTOELECTRONIC DEVICE - A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an In | 03-29-2012 |
20120104411 | TEXTURED III-V SEMICONDUCTOR - A method for fabricating a III-nitride semiconductor film, comprising depositing or growing a III-nitride semiconductor film in a semiconductor light absorbing or light emitting device structure; and growing a textured or structured surface of the III-nitride nitride semiconductor film in situ with the growing or the deposition of the III-nitride semiconductor film, by controlling the growing of the III-nitride semiconductor film to obtain a texture of the textured surface, or one or more structures of the structured surface, that increase output power of light from the light emitting device, or increase absorption of light in the light absorbing device. | 05-03-2012 |
20120161287 | METHOD FOR ENHANCING GROWTH OF SEMI-POLAR (Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION - A method for growing a semi-polar nitride semiconductor thin film via metalorganic chemical vapor deposition (MOCVD) on a substrate, wherein a nitride nucleation or buffer layer is grown on the substrate prior to the growth of the semi-polar nitride semiconductor thin film. | 06-28-2012 |