Patent application number | Description | Published |
20090266997 | ION SOURCE WITH ADJUSTABLE APERTURE - An ion implanter system including an ion source for use in creating a stream or beam of ions. The ion source has an ion source chamber housing that at least partially bounds an ionization region for creating a high density concentration of ions within the chamber housing. An ion extraction aperture of desired characteristics covers an ionization region of the chamber. In one embodiment, a movable ion extraction aperture plate is moved with respect to the housing for modifying an ion beam profile. One embodiment includes an aperture plate having at least elongated apertures and is moved between at least first and second positions that define different ion beam profiles. A drive or actuator coupled to the aperture plate moves the aperture plate between the first and second positions. An alternate embodiment has two moving plate portions that bound an adjustable aperture. | 10-29-2009 |
20090317564 | METHOD AND SYSTEM FOR GROWING A THIN FILM USING A GAS CLUSTER ION BEAM - A method of forming a thin film on a substrate is described. The method comprises providing a substrate in a reduced-pressure environment, and generating a gas cluster ion beam (GCIB) in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are set to achieve a thickness of the thin film ranging up to about 300 angstroms and to achieve a surface roughness of an upper surface of the thin film that is less than about 20 angstroms. The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is grown on the at least a portion of the substrate to achieve the thickness and the surface roughness. | 12-24-2009 |
20100193472 | MULTIPLE NOZZLE GAS CLUSTER ION BEAM PROCESSING SYSTEM AND METHOD OF OPERATING - A gas cluster ion beam (GCIB) processing system using multiple nozzles for forming and emitting at least one GCIB and methods of operating thereof are described. The GCIB processing system may be configured to treat a substrate, including, but not limited to, doping, growing, depositing, etching, smoothing, amorphizing, or modifying a layer thereupon. Furthermore, the GCIB processing system may be operated to produce a first GCIB and a second GCIB, and to irradiate a substrate simultaneously and/or sequentially with the first GCIB and second GCIB. | 08-05-2010 |
20100193701 | MULTIPLE NOZZLE GAS CLUSTER ION BEAM SYSTEM - Disclosed is a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system, and associated methods of operation to grow, modify, deposit, or dope a layer upon a substrate. The multiple nozzle and skimmer assembly includes at least two nozzles arranged in mutual close proximity to at least partially coalesce the gas cluster beams emitted therefrom into a single gas cluster beam and/or angled to converge each beam toward a single intersecting point to form a set of intersecting gas cluster beams, and to direct the single and/or intersecting gas cluster beam into a gas skimmer. | 08-05-2010 |
20100193708 | METHOD OF FORMING TRENCH ISOLATION USING A MULTIPLE NOZZLE GAS CLUSTER ION BEAM PROCESS - Disclosed are methods of operation to grow, modify, deposit, or dope a layer upon a substrate using a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system. Also disclosed is a method of forming a shallow trench isolation (STI) structure on a substrate, for example, an SiO | 08-05-2010 |
20100200774 | MULTI-SEQUENCE FILM DEPOSITION AND GROWTH USING GAS CLUSTER ION BEAM PROCESSING - A method of forming a thin film on a substrate is described. The method comprises depositing a first material layer on a substrate using a first gas cluster ion beam (GCIB), the first material layer comprising a first atomic constituent, and growing a second material layer from at least a surface portion of the first material layer by introducing a second atomic constituent using a second GCIB, the second material layer comprising a reaction product of the first and second atomic constituents. | 08-12-2010 |
20110272593 | GAS CLUSTER ION BEAM SYSTEM WITH CLEANING APPARATUS - A processing system is provided for irradiating a substrate with a gas cluster ion beam (GCIB). The system includes a vacuum vessel that has an interior and is configured to support the substrate therein, and at least one nozzle for forming and emitting a gas cluster beam. The at least one nozzle is configured to direct the gas cluster beam within the vacuum vessel toward the substrate. An ionizer is positioned to ionize the gas cluster beam to form the GCIB. A main gas supply of the system is in fluid communication with the at least one nozzle for supplying gas to the nozzle. The system also includes a plasma-generating apparatus that communicates with the interior of the vacuum vessel and which is configured to receive a cleaning gas and selectively emit plasma for cleaning the interior of the vacuum vessel. | 11-10-2011 |
20110272594 | GAS CLUSTER ION BEAM SYSTEM WITH RAPID GAS SWITCHING APPARATUS - A processing system is provided for irradiating a substrate with a gas cluster ion beam (GCIB). The system includes a nozzle for forming and emitting gas cluster beams through a nozzle outlet, and a stagnation chamber that is located upstream of and adjacent the nozzle. The stagnation chamber has an inlet, and the nozzle is configured to direct a single gas cluster beam toward the substrate. An ionizer is positioned downstream of the outlet and is configured to ionize the gas cluster beam to form the GCIB. The system also includes a gas supply that is in fluid communication with the inlet of the stagnation chamber, and which includes a gas source and a valve located between the gas source and the nozzle for controlling flow of a gas between the gas source and the nozzle. | 11-10-2011 |
20130059449 | GAS CLUSTER ION BEAM ETCH PROFILE CONTROL USING BEAM DIVERGENCE - A method of etching a substrate is described. In one embodiment, the method includes preparing a mask layer having a pattern formed therein on or above at least a portion of a substrate, etching a feature pattern into the substrate from the pattern in the mask layer using a gas cluster ion beam (GCIB), and controlling a sidewall profile of the feature pattern etched into the substrate by adjusting a beam divergence of the GCIB. | 03-07-2013 |
Patent application number | Description | Published |
20090212586 | MOUNTING OF A CONTAINER IN A PASSENGER COMPARTMENT OF A MOTOR VEHICLE - A mounting of a container in a rail pair is provided, which is disposed in a passenger compartment of a motor vehicle, and the rails of the rail pair have substantially horizontally extending guide grooves on the mutually facing sides and a projection is mounted in the container on its side facing the respective rail, and the respective guide groove has a cross section which expands from the groove base and the respective projection has a corresponding cross section which is expanded toward the container. | 08-27-2009 |
20100013256 | CONSOLE FOR A VEHICLE - A console is provided, in particular a central console for a vehicle, having a rail pair for the essentially horizontally displaceable accommodation of inserts of the console between the rails of the rail pair in guides of the rails, as well as a storage space between the inserts and the floor of the vehicle. For such a console, it is provided that the rails are implemented as freestanding brackets, the brackets at least being mounted in the floor of the vehicle, an essentially horizontally situated section of the particular bracket, which is distal from the floor, having at least one guide. Such a console offers high flexibility in regard to the storage space usable in this area with structurally simple design and may be advantageously used both with and also without the inserts in this aspect. | 01-21-2010 |
20140138977 | CUP HOLDER FOR A MOTOR VEHICLE - A motor vehicle is provided with a cup holder incorporated into a center console, the cup holder including, but not limited to a front wall, a back wall, two side walls and a base wall, which delimit a receiving space for at least one object, a dividing element, able to be fastened at the upper end region of the receiving space in a dividing position, for dividing the receiving space into a first receiving compartment for a first object and into a second receiving compartment for a second object. The dividing element is constructed from a first part dividing element and a second part dividing element and the first and second part dividing elements are connected pivotably with one another by at least one intermediate joint. | 05-22-2014 |
Patent application number | Description | Published |
20080278874 | ELECTROSTATIC DISCHARGE (ESD) PROTECTION STRUCTURE AND A CIRCUIT USING THE SAME - An electrostatic discharge (ESD) protection structure is disclosed. The ESD protection structure includes an active device. The active device includes a plurality of drains. Each of the drains has a contact row and at least one body contact row. The at least one body contact row is located on the active device in a manner to reduce the amount of voltage required for triggering the ESD protection structure. | 11-13-2008 |
20080290426 | DMOS DEVICE WITH SEALED CHANNEL PROCESSING - A method of fabricating an electronic device and a resulting electronic device. The method includes forming a pad oxide layer on a substrate, forming a silicon nitride layer over the pad oxide layer, and forming a top oxide layer over the silicon nitride layer. A first dopant region is then formed in a first portion of the substrate. A first portion of the top oxide layer is removed; a remaining portion of the top oxide layer is used to align a second dopant mask and a second dopant region is formed. An annealing step drives-in the dopants but oxygen diffusion to the substrate is limited by the silicon nitride layer; the silicon nitride layer thereby assures that the uppermost surface of the silicon is substantially planar in an area proximate to the dopant regions after the annealing step. | 11-27-2008 |
20090258472 | Semiconductor array and method for manufacturing a semiconductor array - Method for manufacturing a semiconductor array, in which
| 10-15-2009 |
20090273883 | METHOD AND SYSTEM FOR INCORPORATING HIGH VOLTAGE DEVICES IN AN EEPROM - A method and system for fabricating a stacked capacitor and a DMOS transistor are disclosed. In one aspect, the method and system include providing a bottom plate, an insulator, and an additional layer including first and second plates. The insulator covers at least a portion of the bottom plate and resides between the first and second top plates and the bottom plate. The first and second top plates are electrically coupled through the bottom plate. In another aspect, the method and system include forming a gate oxide. The method and system also include providing SV well(s) after the gate oxide is provided. A portion of the SV well(s) resides under a field oxide region of the device. Each SV well includes first, second, and third implants having a sufficient energy to provide the portion of the SV well at a desired depth under the field oxide region without significant additional thermal processing. A gate, source, and drain are also provided. | 11-05-2009 |
20110260250 | Method And Manufacturing Low Leakage Mosfets And FinFets - By aligning the primary flat of a wafer with a ( | 10-27-2011 |