Patent application number | Description | Published |
20090116688 | SYNTHETIC FOVEAL IMAGING TECHNOLOGY - Apparatuses and methods are disclosed that create a synthetic fovea in order to identify and highlight interesting portions of an image for further processing and rapid response. Synthetic foveal imaging implements a parallel processing architecture that uses reprogrammable logic to implement embedded, distributed, real-time foveal image processing from different sensor types while simultaneously allowing for lossless storage and retrieval of raw image data. Real-time, distributed, adaptive processing of multi-tap image sensors with coordinated processing hardware used for each output tap is enabled. In mosaic focal planes, a parallel-processing network can be implemented that treats the mosaic focal plane as a single ensemble rather than a set of isolated sensors. Various applications are enabled for imaging and robotic vision where processing and responding to enormous amounts of data quickly and efficiently is important. | 05-07-2009 |
20110140246 | DELTA-DOPING AT WAFER LEVEL FOR HIGH THROUGHPUT, HIGH YIELD FABRICATION OF SILICON IMAGING ARRAYS - Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH | 06-16-2011 |
20110169160 | REAL TIME MONITORING OF INDIUM BUMP REFLOW AND OXIDE REMOVAL ENABLING OPTIMIZATION OF INDIUM BUMP MORPHOLOGY - A method, apparatus, system, and device provide the ability to form one or more solder bumps on one or more materials. The solder bumps are reflowed. During the reflowing, the solder bumps are monitored in real time. The reflow is controlled in real time, thereby controlling a morphology of each of the solder bumps. Further, the wetting of the solder bumps to a surface of the materials is controlled in real time. | 07-14-2011 |
20110256655 | LOW VOLTAGE LOW LIGHT IMAGER AND PHOTODETECTOR - Highly efficient, low energy, low light level imagers and photodetectors are provided. In particular, a novel class of Della-Doped Electron Bombarded Array (DDEBA) photodetectors that will reduce the size, mass, power, complexity, and cost of conventional imaging systems while improving performance by using a thinned imager that is capable of detecting low-energy electrons, has high gain, and is of low noise. | 10-20-2011 |
20110304022 | SURFACE PASSIVATION BY QUANTUM EXCLUSION USING MULTIPLE LAYERS - A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes a plurality M of doped layers, where M is an integer greater than 1. The dopant sheet densities in the M doped layers need not be the same, but in principle can be selected to be the same sheet densities or to be different sheet densities. M-1 interleaved layers provided between the M doped layers are not deliberately doped (also referred to as “undoped layers”). Structures with M=2, M=3 and M=4 have been demonstrated and exhibit improved passivation. | 12-15-2011 |
20110316110 | ATOMIC LAYER DEPOSITION OF CHEMICAL PASSIVATION LAYERS AND HIGH PERFORMANCE ANTI-REFLECTION COATINGS ON BACK-ILLUMINATED DETECTORS - A back-illuminated silicon photodetector has a layer of Al | 12-29-2011 |
20120168891 | ATOMICALLY PRECISE SURFACE ENGINEERING FOR PRODUCING IMAGERS - High-quality surface coatings, and techniques combining the atomic precision of molecular beam epitaxy and atomic layer deposition, to fabricate such high-quality surface coatings are provided. The coatings made in accordance with the techniques set forth by the invention are shown to be capable of forming silicon CCD detectors that demonstrate world record detector quantum efficiency (>50%) in the near and far ultraviolet (155 nm-300 nm). The surface engineering approaches used demonstrate the robustness of detector performance that is obtained by achieving atomic level precision at all steps in the coating fabrication process. As proof of concept, the characterization, materials, and exemplary devices produced are presented along with a comparison to other approaches. | 07-05-2012 |
20130109977 | UV IMAGING FOR INTRAOPERATIVE TUMOR DELINEATION | 05-02-2013 |
20130175430 | SPARSELY-BONDED CMOS HYBRID IMAGER - A method and device for imaging or detecting electromagnetic radiation is provided. A device structure includes a first chip interconnected with a second chip. The first chip includes a detector array, wherein the detector array comprises a plurality of light sensors and one or more transistors. The second chip includes a Read Out Integrated Circuit (ROIC) that reads out, via the transistors, a signal produced by the light sensors. A number of interconnects between the ROIC and the detector array can be less than one per light sensor or pixel. | 07-11-2013 |
20130181312 | SURFACE PASSIVATION BY QUANTUM EXCLUSION USING MULTIPLE LAYERS - A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes at least two doped layers fabricated using MBE methods. The dopant sheet densities in the doped layers need not be the same, but in principle can be selected to be the same sheet densities or to be different sheet densities. The electrically active dopant sheet densities are quite high, reaching more than 1×10 | 07-18-2013 |
20140167198 | ATOMIC LAYER DEPOSITION OF HIGH PERFORMANCE ANTI REFLECTION COATINGS ON DELTA-DOPED CCDS - A back-illuminated silicon photodetector has a layer of Al | 06-19-2014 |