Patent application number | Description | Published |
20110007425 | MAGNETIC SENSOR WITH COMPOSITE MAGNETIC SHIELD - A magneto-resistive reader includes a first magnetic shield element, a second magnetic shield element and a magneto-resistive sensor stack separating the first magnetic shield element from the second magnetic shield element. The first shield element includes two ferromagnetic anisotropic layers separated by a grain growth suppression layer. | 01-13-2011 |
20110075472 | MAGNETORESISTIVE DEVICE HAVING SPECULAR SIDEWALL LAYERS - A multilayered magnetoresistive device includes a specular layer positioned on at least one sidewall and a copper layer positioned between the specular layer and the sidewall. | 03-31-2011 |
20130027812 | Magnetic Sensor With Anisotropic Liner - An apparatus and associated method are generally directed to a magnetic senor constructed with an anisotropic liner capable of screening magnetic flux. Various embodiments can have a data read element positioned on an air bearing surface adjacent a magnetic shield which is at least partially lined with an in-plane anisotropy layer. | 01-31-2013 |
20130027813 | Shaped Shield For A Magnetoresistive Head - A magnetic shield that is capable of enhancing magnetic reading, such as in use as a data transducing head. A magnetic stack can have a read element with an air bearing surface (ABS). The read element may be positioned adjacent a shield layer with a continuously curvilinear sidewall and a shield feature may be positioned within the areal extent of the continuously curvilinear sidewall. | 01-31-2013 |
20130107679 | HEAT ASSISTED MAGNETIC RECORDING DEVICES | 05-02-2013 |
20130233823 | MAGNETIC SENSOR WITH COMPOSITE MAGNETIC SHIELD - A magneto-resistive reader includes a first magnetic shield element, a second magnetic shield element and a magneto-resistive sensor stack separating the first magnetic shield element from the second magnetic shield element. The first shield element includes two ferromagnetic anisotropic layers separated by a grain growth suppression layer. | 09-12-2013 |
20130286799 | HAMR NFT MATERIALS WITH IMPROVED THERMAL STABILITY - An apparatus that includes a near field transducer, the near field transducer including silver (Ag) and at least one other element or compound, wherein the at least one other element or compound is selected from: copper (Cu), palladium (Pd), gold (Au), zirconium (Zr), zirconium oxide (ZrO), platinum (Pt), geranium (Ge), nickel (Ni), tungsten (W), cobalt (Co), rhodium (Rh), ruthenium (Ru), tantalum (Ta), chromium (Cr), aluminum (Al), vanadium (V), iridium (Ir), titanium (Ti), magnesium (Mg), iron (Fe), molybdenum (Mo), silicon (Si), or combinations thereof oxides of V, Zr, Mg, calcium (Ca), Al, Ti, Si, cesium (Ce), yttrium (Y), Ta, W or thorium (Th), Co, or combinations thereof; or nitrides of Ta, Al, Ti, Si, indium (In), Fe, Zr, Cu, W, boron (B), halfnium (Hf), or combinations thereof. | 10-31-2013 |
20130286804 | HEAT ASSISTED MAGNETIC RECORDING HEADS HAVING BILAYER HEAT SINKS - Disclosed herein is an apparatus that includes a near field transducer positioned adjacent to an air bearing surface of the apparatus; a first magnetic pole; and a heat sink positioned between the first magnetic pole and the near field transducer, wherein the heat sink includes a first and second portion, with the first portion being adjacent the near field transducer and the second portion being adjacent the first magnetic pole, the first portion including a plasmonic material, and the second portion including a diffusion blocking material. | 10-31-2013 |
20130288078 | Thin Film with Reduced Stress Anisotropy - An apparatus and associated method may provide a magnetic element can have a thin film deposited on a cryogenic substrate. The thin film can additionally be stress tuned ,during primary annealing to reduce unwanted stress anisotropy. The thin film can be configured to have near zero internal stress after the primary annealing. | 10-31-2013 |
20140004387 | THIN FILM WITH TUNED GRAIN SIZE | 01-02-2014 |
20140093701 | METHODS OF FORMING MAGNETIC MATERIALS AND ARTICLES FORMED THEREBY - Methods of forming a layer of magnetic material on a substrate, the method including: configuring a substrate in a chamber; controlling the temperature of the substrate at a substrate temperature, the substrate temperature being at or below about 250° C.; and introducing one or more precursors into the chamber, the one or more precursors including: cobalt (Co), nickel (Ni), iron (Fe), or combinations thereof, wherein the precursors chemically decompose at the substrate temperature, and wherein a layer of magnetic material is formed on the substrate, the magnetic material including at least a portion of the one or more precursors, and the magnetic material having a magnetic flux density of at least about 1 Tesla (T). | 04-03-2014 |
20140120374 | MAGNETIC DEVICES HAVING SHIELDS INCLUDING A NICKEL ALLOY - A device including a magnetoresistive sensor; a top shield; and a bottom shield, wherein the magnetoresistive sensor is positioned between the top shield and the bottom shield, and wherein at least one of the bottom shield and the top shield include NiFeX, wherein X is chosen from Nb, Mo, Ta, or W. | 05-01-2014 |
20140169146 | WRITE POLE FOR RECORDING HEAD - A write pole structure disclosed herein includes a write pole, a trailing shield, and a high magnetic moment (HMM) material layer on a surface of the trailing shield facing the write pole. | 06-19-2014 |
20140374376 | MATERIALS FOR NEAR FIELD TRANSDUCERS AND NEAR FIELD TRANSDUCERS CONTAINING SAME - A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element. | 12-25-2014 |
20140376346 | METHODS OF FORMING MATERIALS FOR AT LEAST A PORTION OF A NFT AND NFTS FORMED USING THE SAME - A method including depositing a plasmonic material at a temperature of at least 150° C.; and forming at least a peg of a near field transducer (NFT) from the deposited plasmonic material. | 12-25-2014 |
20140376347 | MATERIALS FOR NEAR FIELD TRANSDUCERS AND NEAR FIELD TRANSDUCERS CONTAINING SAME - Disclosed herein are near field transducers (NFTs) that include either silver, copper, or aluminum and one or more secondary elements. | 12-25-2014 |
20140376348 | DEVICES INCLUDING AT LEAST ONE INTERMIXING LAYER - Devices that include a near field transducer (NFT), the NFT including a peg having five exposed surfaces, the peg including a first material; an overlying structure; at least one intermixing layer, positioned between the peg and the overlying structure, the at least one intermixing layer positioned on at least one of the five surfaces of the peg, the intermixing layer including at least the first material and a second material. | 12-25-2014 |
20140376349 | DEVICES INCLUDING AT LEAST ONE ADHESION LAYER AND METHODS OF FORMING ADHESION LAYERS - Devices that include a near field transducer (NFT), the NFT having a disc and a peg, and the peg having five surfaces thereof; and at least one adhesion layer positioned on at least one of the five surfaces of the peg, the adhesion layer including one or more of the following: rhenium, osmium, iridium, platinum, hafnium, ruthenium, technetium, rhodium, palladium, beryllium, aluminum, manganese, indium, boron, and combinations thereof beryllium oxide, silicon oxide, iron oxide, zirconium oxide, manganese oxide, cadmium oxide, magnesium oxide, hafnium oxide, and combinations thereof tantalum carbide, uranium carbide, hafnium carbide, zirconium carbide, scandium carbide, manganese carbide, iron carbide, niobium carbide, technetium carbide, rhenium carbide, and combinations thereof chromium nitride, boron nitride, and combinations thereof. | 12-25-2014 |
20140376351 | MATERIALS FOR NEAR FIELD TRANSDUCERS AND NEAR FIELD TRANSDUCERS CONTAINING SAME - A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof. | 12-25-2014 |
20140376352 | MATERIALS FOR NEAR FIELD TRANSDUCERS, NEAR FIELD TRANDUCERS CONTAINING SAME, AND METHODS OF FORMING - A device including a near field transducer, the near field transducer including gold (Au), silver (Ag), copper (Cu), or aluminum (Al), and at least two other secondary atoms, the at least two other secondary atoms selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium (Te), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), germanium (Ge), hydrogen (H), iodine (I), rubidium (Rb), selenium (Se), terbium (Tb), nitrogen (N), oxygen (O), carbon (C), antimony (Sb), gadolinium (Gd), samarium (Sm), thallium (Tl), cadmium (Cd), neodymium (Nd), phosphorus (P), lead (Pb), hafnium (Hf), niobium (Nb), erbium (Er), zinc (Zn), magnesium (Mg), palladium (Pd), vanadium (V), zinc (Zn), chromium (Cr), iron (Fe), lithium (Li), nickel (Ni), platinum (Pt), sodium (Na), strontium (Sr), calcium (Ca), yttrium (Y), thorium (Th), beryllium (Be), thulium (Tm), erbium (Er), ytterbium (Yb), promethium (Pm), neodymium (Nd cobalt (Co), cerium (Ce), lanthanum (La), praseodymium (Pr), or combinations thereof. | 12-25-2014 |