Mezaki
Akira Mezaki, Ibaraki JP
Patent application number | Description | Published |
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20140230787 | ENGINE AND ENGINE-OPERATED WORKING MACHINE - An engine is configured such that, during the starting of the engine, when it is being detected that throttle opening has been set at a starting position, if it is detected that the engine speed has exceeded a predetermined speed slightly lower than a speed when a centrifugal clutch becomes an engaged state, a control unit retards the ignition timing from a general angle to a first angle BTDC, and then advances the ignition timing to a second angle at predetermined intervals, and holds the ignition timing at the second angle for a predetermined time period, thereby preventing the engine from stopping due to fouling on the spark plug while suppressing the engine speed at the speed when the centrifugal clutch becomes the engaged state, or less. | 08-21-2014 |
Tomona Mezaki, Daito-Shi JP
Patent application number | Description | Published |
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20110291915 | PORTABLE TERMINAL APPARATUS - A portable terminal apparatus is provided. The portable terminal includes a first unit including a first display part, a second unit including a second display part, and a switching part configured to cause the first unit and the second unit to switch between a first position in which the first unit covers the second display part and a second position in which at least a part of the second display part is exposed to an outside. The first unit is configured such that an opposite side of the first unit is visible through the first display part. | 12-01-2011 |
Yoshio Mezaki, Itami-Shi JP
Patent application number | Description | Published |
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20080296738 | GaAs semiconductor substrate and fabrication method thereof - A GaAs semiconductor substrate includes a surface layer. When an atomic ratio is to be calculated using a 3d electron spectrum of Ga atoms and As atoms measured at the condition of 10° for the photoelectron take-off angle θ by X-ray photoelectron spectroscopy, the structural atomic ratio of all Ga atoms to all As atoms (Ga)/(As) at the surface layer is at least 0.5 and not more than 0.9, the ratio of As atoms bound with O atoms to all Ga atoms and all As atoms (As—O)/{(Ga)+(As)} at the surface layer is at least 0.15 and not more than 0.35, and the ratio of Ga atoms bound with O atoms to all Ga atoms and all As atoms (Ga—O)/{(Ga)+(As)} at the surface layer is at least 0.15 and not more than 0.35. Accordingly, there is provided a GaAs semiconductor substrate having a surface cleaned to an extent allowing removal of impurities and oxides at the surface by at least thermal cleaning of the substrate. | 12-04-2008 |
20080299350 | Method of Polishing Compound Semiconductor Substrate, Compound Semiconductor Substrate, Method of Manufacturing Compound Semiconductor Epitaxial Substrate, and Compound Semiconductor Epitaxial Substrate - Compound-semiconductor-substrate polishing methods, compound semiconductor substrates, compound-semiconductor-epitaxial-substrate manufacturing methods, and compound semiconductor epitaxial substrates whereby oxygen superficially present on the substrates reduced. A compound semiconductor-substrate polishing method includes a preparation step (S | 12-04-2008 |
20090249747 | Method of Packaging Compound Semiconductor Substrates - Affords a compound semiconductor substrate packaging method for preventing oxidation of the surface of compound semiconductor substrates. The compound semiconductor substrate packaging method provides: a first step of inserting a compound semiconductor substrate ( | 10-08-2009 |