Patent application number | Description | Published |
20090201394 | WIDE DYNAMIC RANGE IMAGE SENSOR UTILIZING SWITCH CURRENT SOURCE AT PRE-DETERMINED SWITCH VOLTAGE PER PIXEL - Disclosed are embodiments of a pixel imaging circuit that incorporates a standard photodiode. However, the imaging circuit is modified with a feedback loop to provide a first photo response over a first portion of the light sensing range (e.g., at higher light intensity range) and a second reduced-sensitivity photo response over a second portion of the light sensing range (i.e., at a lower light intensity range), thereby extending the circuits dynamic range of coverage. Also disclosed are embodiments of an associated imaging method and a design structure that is embodied in a machine readable medium and used in the imaging circuit design process. | 08-13-2009 |
20090322446 | Methods of Fabricating a BEOL Wiring Structure Containing an On-Chip Inductor and an On-Chip Capacitor - Methods for fabricating a back-end-of-line (BEOL) wiring structure that includes an on-chip inductor and an on-chip capacitor, as well as methods for tuning and fabricating a resonator that includes the on-chip inductor and on-chip capacitor. The fabrication methods generally include forming the on-chip capacitor and on-chip inductor in different metallization levels of the BEOL wiring structure and laterally positioned to be substantially vertical alignment. The on-chip capacitor may serve as a Faraday shield for the on-chip inductor. Optionally, a Faraday shield may be fabricated either between the on-chip capacitor and the on-chip inductor, or between the on-chip capacitor and the substrate. The BEOL wiring structure may include at least one floating electrode capable of being selectively coupled with the directly-connected electrodes of the on-chip capacitor for tuning, during circuit operation, a resonance frequency of an LC resonator that further includes the on-chip inductor. | 12-31-2009 |
20090322447 | BEOL Wiring Structures That Include an On-Chip Inductor and an On-Chip Capacitor, and Design Structures for a Radiofrequency Integrated Circuit - Back-end-of-line (BEOL) wiring structures that include an on-chip inductor and an on-chip capacitor, as well as design structures for a radiofrequency integrated circuit. The on-chip inductor and an on-chip capacitor, which are fabricated as conductive features in different metallization levels, are vertically aligned with each other. The on-chip capacitor, which is located between the on-chip inductor and the substrate, may serve as a Faraday shield for the on-chip inductor. Optionally, the BEOL wiring structure may include an optional Faraday shield located vertically either between the on-chip capacitor and the on-chip inductor, or between the on-chip capacitor and the top surface of the substrate. The BEOL wiring structure may include at least one floating electrode capable of being selectively coupled with the electrodes of the on-chip capacitor to permit tuning, during circuit operation, of a resonance frequency of an LC resonator that further includes the on-chip inductor. | 12-31-2009 |
20100237468 | ON-CHIP CAPACITORS WITH A VARIABLE CAPACITANCE FOR A RADIOFREQUENCY INTEGRATED CIRCUIT - On-chip capacitors with a variable capacitance, as well as design structures for a radio frequency integrated circuit, and method of fabricating and method of tuning on-chip capacitors. The on-chip capacitor includes first and second ports powered with opposite polarities, first and second electrodes, and first and second voltage-controlled units. Each of the first and second voltage-controlled units is switched between a first state in which the first and second electrodes are electrically isolated from the first and second ports and a second state. When the first voltage-controlled unit is switched to the second state, the first electrode is electrically connected with the first port. When the second voltage-controlled unit is switched to the second state the second electrode is electrically connected with the second port. The on-chip capacitor has a larger capacitance value when the first and second voltage-controlled units are in the second state. | 09-23-2010 |
20120104546 | STRUCTURE AND DESIGN STRUCTURE FOR HIGH-Q VALUE INDUCTOR AND METHOD OF MANUFACTURING THE SAME - Structures with high-Q value inductors, design structure for high-Q value inductors and methods of fabricating such structures is disclosed herein. A method in a computer-aided design system for generating a functional design model of an inductor is also provided. The method includes: generating a functional representation of a plurality of vertical openings simultaneously formed in a substrate, wherein a first of the plurality of vertical openings is used as through silicon vias and is etched deeper than a second of the plurality of vertical openings used for high-Q inductors; generating a functional representation of a dielectric layer formed in the plurality of vertical openings; and generating a functional representation of a metal layer deposited on the dielectric layer in the plurality of vertical. | 05-03-2012 |
20120245724 | PASSIVE RESONATOR, A SYSTEM INCORPORATING THE PASSIVE RESONATOR FOR REAL-TIME INTRA-PROCESS MONITORING AND CONTROL AND AN ASSOCIATED METHOD - Disclosed is a resonator made up of three sections (i.e., first, second and third sections) of a semiconductor layer. The second section has an end abutting the first section, a middle portion (i.e., an inductor portion) coiled around the first section and another end abutting the third section. The first and third sections exhibit a higher capacitance to the wafer substrate than the second section. Also disclosed are a process control system and method that incorporate one or more of these resonators. Specifically, during processing by a processing tool, wireless interrogation unit(s) detect the frequency response of resonator(s) in response to an applied stimulus. The detected frequency response is measured and used as the basis for making real-time adjustments to input settings on the processing tool (e.g., as the basis for making real-time adjustments to the temperature setting(s) of an anneal chamber). | 09-27-2012 |
20120262229 | ON-CHIP CAPACITORS WITH A VARIABLE CAPACITANCE FOR A RADIOFREQUENCY INTEGRATED CIRCUIT - Methods of fabricating an on-chip capacitor with a variable capacitance, as well as methods of adjusting the capacitance of an on-chip capacitor and design structures for an on-chip capacitor. The method includes forming first and second ports configured to be powered with opposite polarities, first and second electrodes, and first and second voltage-controlled units. The method includes configuring the first voltage-controlled unit to selectively couple the first electrode with the first port, and the second voltage-controlled unit to selectively couple the second electrode with the second port. When the first electrode is coupled by the first voltage-controlled unit with the first port and the second electrode is coupled by the second voltage-controlled unit with the second port, the capacitance of the on-chip capacitor increases. | 10-18-2012 |
20120267794 | STRUCTURE AND DESIGN STRUCTURE FOR HIGH-Q VALUE INDUCTOR AND METHOD OF MANUFACTURING THE SAME - Structures with high-Q value inductors, design structure for high-Q value inductors and methods of fabricating such structures is disclosed herein. A method in a computer-aided design system for generating a functional design model of an inductor is also provided. The method includes: generating a functional representation of a plurality of vertical openings simultaneously formed in a substrate, wherein a first of the plurality of vertical openings is used as through silicon vias and is etched deeper than a second of the plurality of vertical openings used for high-Q inductors; generating a functional representation of a dielectric layer formed in the plurality of vertical openings; and generating a functional representation of a metal layer deposited on the dielectric layer in the plurality of vertical. | 10-25-2012 |