Merckling
Bryan Merckling, Plano, TX US
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20140273834 | NEAR FIELD COMMUNICATION BASED SPATIAL ANCHOR AND BEACONLESS BEACON - A consumer may place a mobile device running an enabled application within a certain distance of an NFC spatial anchor and beacon that may first set the spatial anchor. The height and position of the mobile device may then be captured. An algorithm that combines accelerometer and gyro data may be used to continually track movement and angle shifts of the mobile device relative to the spatial anchor and a pre-mapped graphic, object and/or group of objects. While setting the spatial anchor, the anchor and beacon may provide metadata over NFC that may be used to generate an augmented reality experience. The mobile device may then generate a consumer experience that may augment or otherwise alter graphics or three-dimensional objects with a digital content overlay. | 09-18-2014 |
Clement Merckling, Schaerbeck BE
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20100327316 | Method for Manufacturing an III-V Engineered Substrate and the III-V Engineered Substrate Thereof - Manufacturing an III-V engineered substrate involves providing a base substrate comprising an upper layer made of a first III-V compound with a <110> or a <111> crystal orientation, forming an intermediate layer comprising at least a buffer layer of a second III-V compound, wherein the intermediate layer is overlying and in contact with the upper layer of the base substrate. Then a pseudomorphic passivation layer made of a group IV semiconductor material is grown so as to be overlying and in contact with the intermediate layer. This can enable an unpinned interface. The substrate surface can be smoother, implying fewer problems from surface stress. It can be used in electronic devices such as metal-oxide-semiconductor field effect transistors (MOSFETs), high electron mobility transistors (HEMTs), tunneling field effect transistors (TFETs), and optoelectronic devices. | 12-30-2010 |
Clement Merckling, Schaerbeek BE
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20110089469 | Method for Manufacturing a Low Defect Interface Between a Dielectric and a III-V Compound - The present invention is related to a method for manufacturing a low defect interface between a dielectric material and an III-V compound. More specifically, the present invention relates to a method for manufacturing a passivated interface between a dielectric material and an III-V compound. The present invention is also directed to a device comprising a low defect interface between a dielectric material and an III-V compound that has improved performance. | 04-21-2011 |
20130043508 | Method for Manufacturing a Low Defect Interface Between a Dielectric and a III-V Compound - The present invention is related to a method for manufacturing a low defect interface between a dielectric material and an III-V compound. More specifically, the present invention relates to a method for manufacturing a passivated interface between a dielectric material and an III-V compound. The present invention is also directed to a device comprising a low defect interface between a dielectric material and an III-V compound that has improved performance. | 02-21-2013 |
Clement Merckling, Leuven BE
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20140252414 | Passivated III-V or Ge Fin-Shaped Field Effect Transistor - A semiconductor device includes a semiconductor substrate having a top surface, and at least one coated fin protruding perpendicularly from the surface and having a height h and side walls. The at least one coated fin further includes a core of one or more layers selected from the group consisting of (a) III-V compound layers and (b) a Ge layer, and a coating overlaying the core. The coating includes one or more metal oxide layers, at least one of which is aluminium. The device also includes a recess surrounding the at least one coated fin and being defined between two coated fins when more than one fin is present. The recess is filled up with a dielectric material so as to cover the coating on the side walls of the at least one fin up to a certain height h′, which is less than the height h. The present disclosure also relates to a method for producing the semiconductor device. | 09-11-2014 |
Clement Merckling, Schaarbeek BE
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20140339680 | III-V Device and Method for Manufacturing Thereof - The disclosure relates to a method for manufacturing a III-V device and the III-V device obtained therefrom. The method comprises providing a semiconductor substrate including at least a recess area and forming a buffer layer overlying the semiconductor substrate in the recess area. The buffer layer includes a binary III-V compound formed at a first growth temperature by selective epitaxial growth from a group III precursor and a group V precursor in the presence of a carrier gas. The first growth temperature is equal or slightly higher than a cracking temperature of each of the group III precursor and of the group V precursor. | 11-20-2014 |
Clement Merckling, Evere BE
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20150279947 | GATE-ALL-AROUND SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - The disclosed technology generally relates to semiconductor devices and more particularly to a gate-all-around semiconductor device, and methods of fabricating the same. In one aspect, the method comprises providing on a semiconductor substrate between STI regions at least one suspended nanostructure anchored by a source region and a drain region. The suspended nanostructure is formed of a crystalline semiconductor material that is different from a crystalline semiconductor material of the semiconductor substrate. A gate stack surrounds the at least one suspended nanostructure. | 10-01-2015 |
Clément Merckling, Oullins FR
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20100301420 | HIGH-K HETEROSTRUCTURE - A method for preparing a multilayer substrate includes the step of deposing an epitaxial γ-Al | 12-02-2010 |
Clément Merckling, Oullins FR
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20100301420 | HIGH-K HETEROSTRUCTURE - A method for preparing a multilayer substrate includes the step of deposing an epitaxial γ-Al | 12-02-2010 |
20130200440 | HIGH-K HETEROSTRUCTURE - A method for preparing a multilayer substrate includes the step of deposing an epitaxial γ-Al | 08-08-2013 |
Roger Merckling, Palo Alto, CA US
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20100176196 | COMPACT PROTOCOL AND SOLUTION FOR SUBSTANTIALLY OFFLINE MESSAGING BETWEEN PORTABLE CONSUMER DEVICE AND BASE DEVICE - A method for providing messaging between a portable device and base device is provided. The method included communicating one or more message codes maintained in the portable device to the base device. The base device then composes a message for a user of the portable device using a dictionary of message codes. The message codes have corresponding message values, which are used to generate the message for the one or more message codes. The generated message is then provided to the user. | 07-15-2010 |
20120012650 | COMPACT PROTOCOL AND SOLUTION FOR SUBSTANTIALLY OFFLINE MESSAGING BETWEEN PORTABLE CONSUMER DEVICE AND BASE DEVICE - A method for providing messaging between a portable device and base device is provided. The method included communicating one or more message codes maintained in the portable device to the base device. The base device then composes a message for a user of the portable device using a dictionary of message codes. The message codes have corresponding message values, which are used to generate the message for the one or more message codes. The generated message is then provided to the user. | 01-19-2012 |