Patent application number | Description | Published |
20080265133 | Power Supply Control Circuit with Optical Feedback - An integrated circuit is disclosed that integrates a low current, high speed optical receiver with the primary side control functions of the power supply. This is further combined with an optical emitter to create a single component for feedback and control, providing improved performance and manufacturing. A method of providing feedback for the power supply using such an integrated optically coupled control circuit is also disclosed. | 10-30-2008 |
20080265822 | Class G motor drive - A method for driving a motor by using an output stage amplifier that operates between two or more separate supply voltages, depending on the amplitude of the input signal, is presented. This bridge unipolar class G stage allows driving the motor with high accuracy and improved efficiency without introducing switching noise typical of PWM motor driving. This method can be applied with the same benefits to class AB, pseudo class AB or to class A output stages. When this method is associated with an imposed current driving approach and with a current oversampling digital to analog converter the resulting advantages are very significant. | 10-30-2008 |
20080310046 | Class H Drive - A method for driving a load by using an output stage amplifier in full bridge configuration whose supply is modulated by means of a fast switching power converter, controlled in order to maintain the stage's output common mode at its minimum voltage, is presented. The modulation of the switching power converter output is obtained by a feedback control system regulating directly the voltage of the bridge output stage terminals. This bridge unipolar class H stage allows driving the load with high accuracy and improved efficiency without introducing switching noise and EMI at the load terminals typical of PWM driving. This method can be applied with the same benefits to class AB, pseudo class AB or to class A output stages. When this method is associated with an imposed current driving approach and with a current oversampling digital to analog converter the resulting advantages are very significant for accurate motor control applications. | 12-18-2008 |
20120033509 | Memory data reading and writing technique - A novel circuit for reading data in solid state memory cells is presented. It can be used for any type of memory cell array but more specifically it is particularly suited for volatile memories like SRAM and DRAM. It is based on sensing the current in the ground line of the memory cell when the data is being read. This eliminates the need for detecting large voltage swings on the bit line resulting in large delays or complex sense amplification circuits. It offers the advantages of being very small in silicon area, very fast and very efficient. The read and write static noise margins are increased with respect to conventional techniques. The current can be amplified and converted to a voltage signal by a transimpedance amplifier ac coupled to a sense resistor on the ground line. The signal can be successively latched. The same technique can be used to detect when the writing of a cell has been successfully carried out. | 02-09-2012 |
20120132958 | High performance transistor - A novel semiconductor transistor is presented. The semiconductor structure has a gate region forming a channel with repetitive patterns in the direction perpendicular to the current flow, so that the portion of its channel that is not strictly planar contributes to a significant reduction of the silicon area occupied by the device. It offers the advantage of lower on-resistance for the same silicon area while improving on its dynamic performances. The additional cost to shape the channel region of the device in periodic repetitive patterns is minimum, which makes the present invention easy to implement in any conventional CMOS process technology and very cost effective. | 05-31-2012 |
20120168819 | Semiconductor pillar power MOS - A novel semiconductor power transistor is presented. The semiconductor structure is simple and is based on a multi-gate vertical MOS configuration with multi semiconductor pillars, so that the control on the carrier transport is enhanced and the specific on-resistance per area is reduced. Furthermore, due to its particular geometry, the parasitic resistances due to the source/drain junctions, are also drastically reduced with respect to standard CMOS technologies. It offers the advantage of extremely lower on-resistance for the same silicon area while improving on its dynamic performances. The novel structure does not require Silicon On Insulator technologies and can be built using the standard Bulk CMOS process technology. This characteristic improves the thermal properties of the device which are extremely important in power applications. | 07-05-2012 |
20120170334 | Hysteretic CL power converter - A novel switching hysteretic power converter is presented. The power converter combines the function of a capacitive charge pump with the function of an inductive step down converter to obtain a switching boost converter with a much simpler control method with respect to conventional inductive boost power converters. The hysteretic control provides stable operation in all conditions with excellent load transient response. Furthermore the hysteretic control allows high frequency switching reducing the size and cost of the passive components. The Discontinuous Conduction Mode of operation provides very high efficiency even at light loads. The presented power converter can be operated as a boost converter or as a buck converter simply by changing the switching phase of one switch. In both types of operation the efficiency of the hysteretic power converter can be quite high even at high switching frequencies. | 07-05-2012 |
20120175679 | Single structure cascode device - A novel semiconductor power transistor is presented. The semiconductor structure is simple and is based on a MOS configuration with a drift region and an additional gate that modulates the carrier density in the drift region, so that the control on the carrier transport is enhanced and the specific on-resistance per area is reduced. This characteristic enables the use of short gate lengths while maintaining the electric field under the gate within reasonable values in high voltage applications, without increasing the device on-resistance. It offers the advantage of extremely lower on-resistance for the same silicon area while improving on its dynamic performances with respect to the standard CMOS technology. Another inherent advantage is that the switching gate losses are smaller due to lower V | 07-12-2012 |
20120176822 | Synthetic ripple Hysteretic powder converter - A novel switching hysteretic power converter is presented. The converter includes the generation of a synthetic ripple signal and a feedback network to combine a signal in phase with the inductor current with a signal proportional to the regulated output voltage. The presented approach provides a switching boost converter with a much simpler control method with respect to conventional inductive boost power converters. The hysteretic control provides stable operation in all conditions with excellent load and line transient response. Furthermore the hysteretic control allows high frequency switching, reducing the size and cost of the passive components. The presented converter includes the Discontinuous Conduction Mode of operation to achieve very high efficiency at light loads. The presented approach can also be applied to buck switching power converters with excellent performance in terms of transient response, stability, efficiency and operation at high switching frequencies. The approach can be extended also to the hysteretic control of isolated switching flyback converters. | 07-12-2012 |
20120212861 | Voltage spikes control for power converters - A novel inductive overvoltage suppression circuit for power converters is presented. High amplitude voltage spikes are generally occurring in high frequency power converters in presence of small parasitic inductances coupled to the power distribution rails, in correspondence of the switching transitions, particularly when high load currents are required. The presented invention proposes active clamps to limit the amplitude of the overvoltage. Furthermore the excess energy in the parasitic inductances is utilized to provide energy and/or a signal to determine when to turn on the next phase power device with the fastest transition possible without incurring in cross-conduction currents in the power stage of the converter, thus improving its overall performance, and circuit reliability in addition to achieving high conversion efficiency. | 08-23-2012 |
20120281336 | Semiconductor variable capacitor - A novel semiconductor variable capacitor is presented. The semiconductor structure is simple and is based on a semiconductor variable MOS capacitor structure suitable for integrated circuits, which has at least three terminals, one of which is used to modulate the equivalent capacitor area of the MOS structure by increasing or decreasing its DC voltage with respect to another terminal of the device, in order to change the capacitance over a wide ranges of values. Furthermore, the present invention decouples the AC signal and the DC control voltage avoiding distortion and increasing the performance of the device, such as its control characteristic. The present invention is simple and only slightly dependent on the variations due to the fabrication process. It exhibits a high value of capacitance density and, if opportunely implemented, shows a linear dependence of the capacitance value with respect to the voltage of its control terminal. | 11-08-2012 |
20120292665 | High performance multigate transistor - A novel semiconductor power transistor is presented. The semiconductor structure is simple and is based on a FET structure, where multiple channels and multiple gate regions are formed in order to achieve a lower specific on-resistance, and a higher control on the transport properties of the device. No dielectric layer is present between gate electrodes and device channels, decreasing the parasitic capacitance associated with the gate terminal. The fabrication of the device does not require Silicon On Insulator techniques and it is not limited to Silicon semiconductor materials. It can be fabricated as an enhancement or depletion device with much more control on the threshold voltage of the device, and with superior RF performance. | 11-22-2012 |
20120299553 | Bidirectional hysteretic power converter - A novel switching hysteretic bidirectional power converter is presented. The converter includes the generation of a synthetic ripple signal and feedback networks to hysteretically control the power converter both when the converter operates as a boost converter with the flow of power in one direction, and when the converter operates as a buck power converter with the flow of power in the opposite direction. | 11-29-2012 |
20120305992 | HYBRID MONOLITHIC INTEGRATION - The present invention describes a hybrid integrated circuit comprising both CMOS and III-V devices, monolithically integrated in a single chip. It allows the almost complete elimination of the contamination issues related to the integration of different technologies, maintaining at the same time a good planarization of the structure. It further simplifies the fabrication process, allowing the growth of high quality III-V materials on (100) silicon substrates lowering the manufacturing cost. Moreover, differently from many prior art attempts, it does not require silicon on insulator technologies and/or other expensive process steps. This invention enables the consolidation on the same integrated circuit of a hybrid switching power converter that takes advantage of the established circuit topologies of CMOS circuitries and of the higher mobility and voltage withstanding of III-V HEMT devices. | 12-06-2012 |
20130015829 | Synchronization of hysteretic power convertersAANM Menegoli; PaoloAACI San JoseAAST CAAACO USAAGP Menegoli; Paolo San Jose CA USAANM Marino; Fabio AlessioAACI San JoseAAST CAAACO USAAGP Marino; Fabio Alessio San Jose CA US - A novel method to synchronize the switching frequency of hysteretic power converters is presented. The method includes the generation of a clock signal and the injection of a periodic disturbance signal operating at the frequency of the generated clock in the main loop of the converter to synchronize the hysteretic power converter to switch at the frequency of the clock. | 01-17-2013 |
20130032860 | HFET with low access resistance - A novel semiconductor power transistor is presented. The semiconductor structure is simple and is based on a Hetero-structure FET structure, where the access regions have been eliminated so as to effectively obtain a lower specific on-resistance, and a higher control on the transport properties of the device, drastically reducing the dispersion phenomena associated with these regions. The present invention can be realized both with polar and non-polar (or semi-polar) materials, without requiring delta doping implantation. It can be fabricated as an enhancement or depletion mode device with much higher control on the device threshold voltage with respect to state-of-the-art HFET devices, and achieving superior RF switching performance. Furthermore, due to the absence of access regions, enhancement mode devices can be realized without discontinuity in the channel conductivity, which results in an even lower on-resistance. | 02-07-2013 |
20130038310 | Constant frequency synthetic ripple power converter - A novel method to operate synthetic ripple switching power converters at constant frequency is presented. The method includes the generation of a clock signal and the summing of a ramp signal to a DC voltage reference to be compared to a synthetic ripple signal. The ramp signal is synchronous with the clock signal. A minimum on-time or minimum off-time type of control is implemented. The switching frequency is constant. | 02-14-2013 |
20130069164 | Intrinsic channel FET - A novel semiconductor transistor is presented. The semiconductor structure has a MOSFET like structure, with the difference that the device channel is formed in an intrinsic region, so as to effectively decrease the impurity and surface scattering phenomena deriving from a high doping profile typical of conventional MOS devices. Due to the presence of the un-doped channel region, the proposed structure greatly reduces Random Doping Fluctuation (RDF) phenomena decreasing the threshold voltage variation between different devices. In order to control the threshold voltage of the device, a heavily doped poly-silicon or metallic gate is used. However, differently from standard CMOS devices, a high work-function metallic material, or a heavily p-doped poly-silicon layer, is used for a n-channel device and a low work-function metallic material, or heavily n-doped poly-silicon layer, is used for a p-channel FET. | 03-21-2013 |
20130069611 | Multi-phase synthetic ripple power converter - A novel method to operate synthetic ripple multi-phase switching power converters at constant frequency is presented. The method includes the means for sensing the current in each phase without adding extra dissipation and for balancing the currents by affecting the synthetic ripple signal to modulate the duty cycle without disturbing the overall output voltage regulation. | 03-21-2013 |
20130161698 | E-MODE HFET DEVICE - The present invention describes a transistor based on a Hetero junction FET structure, where the metal gate has been replaced by a stack formed by a highly doped compound semiconductor and an insulating layer in order to achieve enhancement mode operation and at the same time drastically reduce the gate current leakage. The combination of the insulating layer with a highly doped semiconductor allows the tuning of the threshold voltage of the device at the desired value by simply changing the composition of the semiconductor layer forming the gate region and/or its doping allowing a higher degree of freedom. In one of the embodiment, a back-barrier layer and a heavily doped threshold tuning layer are used to suppress Short Channel Effect phenomena and to adjust the threshold voltage of the device at the desired value. The present invention can be realized both with polar and non-polar (or semi-polar) materials. | 06-27-2013 |
20130162228 | Single Inductor Multiple Output Power Converter - A novel method to operate and control single inductor multiple output switching power converter is presented. The method includes the means for generating one or more synthetic ripple signals and operating the converter at constant switching frequency allowing high frequency operation, maintaining stability in all conditions with minimum cross regulation between the outputs independently on the levels of load present at the outputs. The method further includes means for setting the maximum frequency of multiplexing the energy stored in the inductor between the various outputs reaching the desired compromise between the value of the output capacitors, the switching frequency of the output power devices and the acceptable output voltage ripple. | 06-27-2013 |
20140332928 | Digital Semiconductor Variable Capacitor - A novel semiconductor variable capacitor is presented. The semiconductor structure is simple and is based on a semiconductor variable capacitor with MOS compatible structure suitable for integrated circuits, which has at least three terminals, one of which is used to modulate the capacitance value between the other two terminals of the device, by increasing or decreasing its DC voltage with respect to one of the main terminals of the device. Furthermore, the present invention decouples the AC signal and the DC control voltage preventing distortion of the RF signal. The present invention describes a controllable capacitor whose capacitance value is not necessarily linear with its control voltage, but although possibly abrupt in its characteristic, is utilized to manufacture a semiconductor variable capacitor with digital control to improve its noise and linearity performance while maintaining high quality factor. | 11-13-2014 |
20140367832 | Three-terminal Variable Capacitor - A novel semiconductor variable capacitor is presented. The semiconductor structure is simple and is based on a semiconductor variable MOS capacitor structure suitable for integrated circuits, which has at least three terminals, one of which is used to modulate the equivalent capacitor area of the MOS structure by increasing or decreasing its DC voltage with respect to another terminal of the device, in order to change the capacitance over a wide ranges of values. Furthermore, the present invention decouples the AC signal and the DC control voltage minimizing the distortion and increasing the performance of the device, such as its control characteristic. The present invention is simple and only slightly dependent on the variations due to the fabrication process. It exhibits a high value of capacitance density and, if opportunely implemented, shows a quasi linear dependence of the capacitance value with respect to the voltage of its control terminal. | 12-18-2014 |
20150032052 | Electronic Medical System With Implantable Medical Device, Having Wireless Power Supply Transfer - An electronic medical system is described. The system comprises an external RF power transmitter configured to emit a first power signal via an electromagnetic coupling, said RF power transmitter being configured to emit said first energy signal with a power no greater than 1W. The system further comprises an implantable medical device comprising: at least one receiver antenna configured to receive said first energy signal via an electromagnetic coupling; an RF power receiver module configured to extract a second energy signal having a power of at least 1 mW and to be powered by said second energy signal; a power actuator module, operatively connected to the RF power receiver module, powered by said second energy signal. The power actuator module is configured to deliver a medical treatment to at least a target tissue of a patient on the basis of a control signal generated by the RF power receiver module. | 01-29-2015 |
20150102680 | Wireless Power Transmission in Portable Communication Devices - The present invention describes means to intentionally transmit power wirelessly from a portable communication device like a mobile phone, smart-phone, tablet or telephone watch using radio frequency, ultrasound, microwave or laser technologies to power up or charge devices external to the portable communication device. In particular the wireless power transmitter is physically placed inside the portable communication device or coupled to it, in order to have a means to transfer power without wires or cables to other devices. The present invention may be utilized in applications like sensors, implanted devices for medical use, speakers, mouse, keyboard, electrical glasses for 3D viewing, small displays, gadgets in the car, electronic toys and so on. | 04-16-2015 |
20150179732 | Area efficient field effect device - A novel semiconductor transistor is presented. The semiconductor structure has a gate region forming a channel with repetitive patterns in the direction perpendicular to the current flow, so that the portion of its channel that is not strictly planar contributes to a significant reduction of the silicon area occupied by the device. It offers the advantage of lower on-resistance for the same silicon area while improving on its dynamic performances. The additional cost to shape the channel region of the device in periodic repetitive patterns is minimum, which makes the present invention easy to implement in any conventional CMOS process technology and very cost effective. | 06-25-2015 |
20150194538 | Multiple Control Transcap Variable Capacitor - A novel semiconductor variable capacitor is presented. The semiconductor structure is simple and is based on a semiconductor variable MOS capacitor structure suitable for integrated circuits, which has at least three terminals, one of which is used to modulate the equivalent capacitor area of the MOS structure by increasing or decreasing its DC voltage with respect to another terminal of the device, in order to change the capacitance over a wide ranges of values. Furthermore, the present invention decouples the AC signal and the DC control voltage minimizing the distortion and increasing the performance of the device, such as its control characteristic. The present invention is simple and only slightly dependent on the variations due to the fabrication process. It exhibits a high value of capacitance density and, if opportunely implemented, shows a quasi linear dependence of the capacitance value with respect to the voltage of its control terminal. | 07-09-2015 |
20150212385 | Semiconductor Interferometric Device - The present invention describes a semiconductor interferometric reflecting device capable of modulating the reflected light by modulating the carrier concentration inside a semiconductor device. The variation of the carrier concentration within the device causes the variation of the physical optical properties inside the semiconductor material leading to a shift of the reflected and absorbed light spectrums. The modulating layer is fabricated on an optically smooth substrate, i.e., sufficiently smooth to allow for the occurrence of interference effects. Furthermore, if desired, the same device can be designed to emit or reflect the desired light. The present invention may be utilized for a reflective flat panel display comprising an array of semiconductor interferometric reflecting devices. | 07-30-2015 |
20160087590 | Tunable Envelope Tracking - A novel method to provide power management to a radio frequency amplifier is described. The method makes use of a DC-AC resonant switching power converter, a resonant tunable network and a rectifier to track the envelope signal of a radio amplifier system. This system provides a fast, efficient and clean supply to the radio frequency amplifier. The resonant power converter may be implemented with a class E inverter. The resonant power converter may be operated efficiently by switching at zero voltage switching or zero current switching. By operating the resonant switching power converter at the same frequency of the radio frequency amplifier, the spectrum of the power converter is immune from undesired harmonics while meeting the bandwidth requirement. By adaptively tuning the tunable resonant network, the output voltage of the rectifier is controlled to track the envelope signal. | 03-24-2016 |