Patent application number | Description | Published |
20130005648 | PEPTIDE COMPOSITIONS AND METHODS FOR INHIBITING HERPESVIRUS INFECTION - The present invention provides an isolated peptide having an amino acid residue sequence that comprises at least one human cytomegalovirus glycoprotein B (HCMV-gB) sequence segment, each HCMV-gB sequence segment consisting of at least 8 and not more than 60 consecutive amino acid residues from residues 146 to 315, residues 476 to 494 of SEQ ID NO: 1, or from a sequence variant of residues 146 to 315 or 476 to 494 of SEQ ID NO: 1 that has at least 70% sequence identity thereto. The peptides of the invention are useful for treating, preventing, or inhibiting a herpesvirus (e.g., Herpes Simplex Virus-1, Human Cytomegalovirus, and the like) infection in a subject. | 01-03-2013 |
20150119318 | PEPTIDE COMPOSITIONS AND METHODS FOR INHIBITING HERPESVIRUS INFECTION - The present invention provides an isolated peptide having an amino acid residue sequence that comprises at least one human cytomegalovirus glycoprotein B (HCMV-gB) sequence segment, each HCMV-gB sequence segment consisting of at least 8 and not more than 60 consecutive amino acid residues from residues 146 to 315, residues 476 to 494 of SEQ ID NO: 1, or from a sequence variant of residues 146 to 315 or 476 to 494 of SEQ ID NO: 1 that has at least 70% sequence identity thereto. The peptides of the invention are useful for treating, preventing, or inhibiting a herpesvirus (e.g., Herpes Simplex Virus-1, Human Cytomegalovirus, and the like) infection in a subject. | 04-30-2015 |
Patent application number | Description | Published |
20080228697 | View maintenance rules for an update pipeline of an object-relational mapping (ORM) platform - A database update pipeline may be incorporated into a data access architecture for providing data services to applications, thereby bridging the gap between application data and data as persisted in databases. The update pipeline has the ability to translate changes made to object instances into data store change constructs, and carry those changes over to a data store. Such a pipeline can also advantageously perform the reverse operation, allowing applications to query using the database update pipeline, and receive materialized object instances. | 09-18-2008 |
20090150367 | MAPPING AND QUERY TRANSLATION BETWEEN XML, OBJECTS, AND RELATIONS - Described is programmatic access to persistent XML and relational data from applications based upon explicit mappings between object classes, XML schema types, and relations. The mappings are used in data access, that is, they drive query and update processing. A query may be processed into a query for accessing the XML data and another query for second type for accessing the relational data. Mappings support strongly-typed classes and loosely-typed classes, and may be conditional upon other data, may decouple query and update translation performed at runtime from schema translation used at compile time, and/or may be compiled into transformations that produce objects from XML data and transformations that produce XML data from objects. Mappings may be generated automatically or provided by the developer. | 06-11-2009 |
20110314043 | FULL-FIDELITY REPRESENTATION OF XML-REPRESENTED OBJECTS - A data structure may exist in various representations, such as an object in an object-oriented system or a set of elements included in an extensible markup language (XML) document structured according to an XML type defined in an XML schema. While many aspects of these representations may correspond, some aspects of an XML document may not be specified by the XML schema (such as developer comments, whitespace, and preprocessor directives), and may be lost while translating an XML representation of the data structure to an object. These non-schematized aspects may be included in the object as a delta, specifying the location of an aspect with relation to an element defined by the XML schema. Preserving non-schematized aspects may promote the full representation of the data structure as an object, and may facilitate a full-fidelity regeneration of the XML document from which the object was generated. | 12-22-2011 |
Patent application number | Description | Published |
20090050913 | METHOD FOR ACHIEVING LOW DEFECT DENSITY ALGAN SINGLE CRYSTAL BOULES - A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation. In order to achieve high growth rates, preferably a dual growth zone reactor is used in which a first, high temperature zone is used for crystal nucleation and a second, low temperature zone is used for rapid crystal growth. Although the process can be used to grow crystals in which the as-grown material and the seed crystal are of different composition, preferably the two crystalline structures have the same composition, thus yielding improved crystal quality. | 02-26-2009 |
20090286063 | METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE SEMICONDUCTOR MATERIALS - A method and apparatus for growing low defect, optically transparent, colorless, crack-free, substantially flat, single crystal Group III nitride epitaxial layers with a thickness of at least 10 microns is provided. These layers can be grown on large area substrates comprised of Si, SiC, sapphire, GaN, AlN, GaAs, AlGaN and others. In one aspect, the crack-free Group III nitride layers are grown using a modified HVPE technique. If desired, the shape and the stress of Group III nitride layers can be controlled, thus allowing concave, convex and flat layers to be controllably grown. After the growth of the Group III nitride layer is complete, the substrate can be removed and the freestanding Group III nitride layer used as a seed for the growth of a boule of Group III nitride material. The boule can be sliced into individual wafers for use in the fabrication of a variety of semiconductor structures (e.g., HEMTs, LEDs, etc.). | 11-19-2009 |
Patent application number | Description | Published |
20080257256 | BULK GaN AND AlGaN SINGLE CRYSTALS - Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity. | 10-23-2008 |
20090092815 | METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE SEMICONDUCTOR MATERIALS - A method and apparatus for growing low defect, optically transparent, colorless, crack-free, substantially flat, single crystal Group III nitride epitaxial layers with a thickness of at least 10 microns is provided. These layers can be grown on large area substrates comprised of Si, SiC, sapphire, GaN, AlN, GaAs, AlGaN and others. In one aspect, the crack-free Group III nitride layers are grown using a modified HVPE technique. If desired, the shape and the stress of Group III nitride layers can be controlled, thus allowing concave, convex and flat layers to be controllably grown. After the growth of the Group III nitride layer is complete, the substrate can be removed and the freestanding Group III nitride layer used as a seed for the growth of a boule of Group III nitride material. The boule can be sliced into individual wafers for use in the fabrication of a variety of semiconductor structures (e.g., HEMTs, LEDs, etc.). | 04-09-2009 |
20090148984 | BULK GaN AND AlGaN SINGLE CRYSTALS - Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity. | 06-11-2009 |
20110114015 | METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE SEMICONDUCTOR MATERIALS - Method for producing a III-N (AlN, GaN, Al | 05-19-2011 |
20120076968 | METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE SEMICONDUCTOR MATERIALS - Method for producing a III-N (AlN, GaN, Al | 03-29-2012 |
Patent application number | Description | Published |
20120291698 | METHODS FOR IMPROVED GROWTH OF GROUP III NITRIDE SEMICONDUCTOR COMPOUNDS - Methods are disclosed for growing group III-nitride semiconductor compounds with advanced buffer layer technique. In an embodiment, a method includes providing a suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. The method includes forming an AlN buffer layer by flowing an ammonia gas into a growth zone of the processing chamber, flowing an aluminum halide containing precursor to the growth zone and at the same time flowing additional hydrogen halide or halogen gas into the growth zone of the processing chamber. The additional hydrogen halide or halogen gas that is flowed into the growth zone during buffer layer deposition suppresses homogeneous AlN particle formation. The hydrogen halide or halogen gas may continue flowing for a time period while the flow of the aluminum halide containing precursor is turned off. | 11-22-2012 |
20120295418 | METHODS FOR IMPROVED GROWTH OF GROUP III NITRIDE BUFFER LAYERS - Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN). | 11-22-2012 |
20120295428 | METHODS FOR PRETREATMENT OF GROUP III-NITRIDE DEPOSITIONS - Embodiments of the present disclosure relate to methods for pretreatment of substrates and group III-nitride layers for manufacturing devices such as light emitting diodes (LEDs), laser diodes (LDs) or power electronic devices. One embodiment of the present disclosure provides a method including providing one or more substrates having an aluminum containing surface in a processing chamber and exposing a surface of each of the one or more substrates having an aluminum containing surface to a pretreatment gas mixture to form a pretreated surface. The pretreatment gas mixture includes ammonia (NH | 11-22-2012 |
20120318457 | MATERIALS AND COATINGS FOR A SHOWERHEAD IN A PROCESSING SYSTEM - Apparatus and systems are disclosed for providing a protective material for a showerhead of a processing system. In an embodiment, a processing system includes a processing chamber for processing substrates and a showerhead having a diffuser plate for distributing processing gases to the processing chamber. The diffuser plate may include a protective material to protect the showerhead from processing gases. The diffuser plate may be formed with tungsten or tungsten coated with a tantalum alloy and tantalum. | 12-20-2012 |
20130098455 | MULTIPLE COMPLEMENTARY GAS DISTRIBUTION ASSEMBLIES - Described herein are exemplary apparatuses having multiple gas distribution assemblies in accordance with one embodiment. In one embodiment, the apparatus includes two or more gas distribution assemblies. Each gas distribution assembly has orifices through which at least one process gas is introduced into a processing chamber. The two or more gas distribution assemblies may be designed to have complementary characteristic radial film growth rate profiles. | 04-25-2013 |